2SC3830 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC3830 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3830
DESCRIPTION
·With TO-220C package
·High voltage
·High speed switching
APPLICATIONS
·For switching regulator and
general purpose applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
600
500
10
UNIT
V
V
V
A
A
A
W
ꢀ
Open base
Open collector
6
ICM
Collector current-peak
Base current
12
IB
2
PC
Collector dissipation
Junction temperature
Storage temperature
TC=25ꢀ
50
Tj
150
-55~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3830
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=25mA ; IB=0
500
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=2A; IB=0.4A
IC=2A; IB=0.4A
VCB=600V ;IE=0
VEB=10V; IC=0
0.5
1.3
1
V
V
mA
µA
IEBO
100
30
hFE
IC=2A ; VCE=4V
IC=0.5A ; VCE=12V
f=1MHz ; VCB=10V
10
fT
Transition frequency
8
MHz
pF
COB
Output capacitance
45
Switching times
ton
tstg
tf
Turn-on time
1.0
4.5
0.5
µs
µs
µs
VCC=200V; IC=2A
IB1=0.2A; IB2=-0.4A;
RL=100Ω
Storage time
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3830
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3830
4
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