2SC3830 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2SC3830 |
厂家: | INCHANGE SEMICONDUCTOR COMPANY LIMITED |
描述: | Silicon NPN Power Transistors |
文件: | 总4页 (文件大小:91K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3830
DESCRIPTION
·
·With TO-220C package
·High voltage
·High speed switching
APPLICATIONS
·For switching regulator and
general purpose applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
600
500
10
UNIT
V
Open base
V
Open collector
V
6
A
ICM
Collector current-peak
Base current
12
A
IB
2
A
PC
Collector dissipation
Junction temperature
Storage temperature
TC=25℃
50
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3830
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=25mA ; IB=0
500
IC=2A; IB=0.4A
IC=2A; IB=0.4A
VCB=600V ;IE=0
VEB=10V; IC=0
0.5
1.3
1
V
V
mA
μA
IEBO
100
30
hFE
DC current gain
IC=2A ; VCE=4V
IC=0.5A ; VCE=12V
f=1MHz ; VCB=10V
10
fT
Transition frequency
8
MHz
pF
COB
Output capacitance
45
Switching times
ton
tstg
tf
Turn-on time
1.0
4.5
0.5
μs
μs
μs
VCC=200V; IC=2A
IB1=0.2A; IB2=-0.4A;
RL=100Ω
Storage time
Fall time
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3830
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3830
4
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