PKN2607 [PACELEADER]
P-Ch 20V Fast Switching MOSFETs;
| 型号： | PKN2607 |
| 厂家： | 
PACELEADER INDUSTRIAL |
| 描述： | P-Ch 20V Fast Switching MOSFETs |
| 文件： | 总5页 (文件大小：1316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PKN2607
P-Ch 20V Fast Switching MOSFETs
Green Device Available
Super Low Gate Charge
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
-20V
32mΩ
-4.7A
Description
SOT23 Pin Configuration
The PKN2607 is the high cell density trenched
P-ch MOSFETs, which provides excellent RDSON
and efficiency for most of the small power
switching and load switch applications
The PKN2607 meet the RoHS and Green Product
requirement with full function reliability approved.
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
-20
Units
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±12
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ -4.5V1
Continuous Drain Current, VGS @ -4.5V1
Pulsed Drain Current2
-4.7
-3.8
A
A
-18.8
A
PD@TA=25℃
TSTG
Total Power Dissipation3
1
W
℃
℃
Storage Temperature Range
-55 to 150
-55 to 150
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
125
80
Unit
℃/W
℃/W
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
RθJC
---
1
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1
PKN2607
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-20
---
Typ.
---
Max.
---
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃ , ID=-1mA
VGS=-4.5V , ID=-4A
-0.01
25
---
V/℃
---
32
RDS(ON)
Static Drain-Source On-Resistance2
m
VGS=-2.5V , ID=-2A
---
32
40
VGS=-1.8V , ID=-1.5A
42
55
VGS(th)
Gate Threshold Voltage
-0.3
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
-0.5
2.96
---
-1.0
---
V
VGS=VDS , ID =-250uA
△VGS(th)
VGS(th) Temperature Coefficient
mV/℃
VDS=-16V , VGS=0V , TJ=25℃
VDS=-16V , VGS=0V , TJ=55℃
-1
IDSS
Drain-Source Leakage Current
uA
---
-5
VGS=±12V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
---
±100
---
nA
S
VDS=-5V , ID=-4A
21
Qg
27.3
3.6
6.5
9.2
59
38.2
5.0
9.1
18.4
106
198
142
3192
308
262
VDS=-15V , VGS=-4.5V , ID=-4A
nC
Qgs
Qgd
Td(on)
Tr
Turn-On Delay Time
Rise Time
VDD=-10V , VGS=-4.5V , RG=3.3
ns
ID=-4A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
99
71
Ciss
Coss
Crss
Input Capacitance
2280
220
187
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Parameter
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
Min.
---
Typ.
---
Max.
-4.7
-18.8
-1
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
---
---
A
---
---
V
---
52
28
---
nS
nC
IF=-4A , dI/dt=100A/µs , TJ=25℃
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
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2
PKN2607
P-Ch 20V Fast Switching MOSFETs
Typical Characteristics
50
40
30
20
20
ID=-4A
VGS=-5V
16
12
8
VGS=-4.5V
VGS=-3V
VGS=-2.5V
VGS=-1.8V
4
0
1
2
3
4
5
0
0.25
0.5
0.75
1
1.25
-VDS , Drain-to-Source Voltage (V)
-VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
8
6
4
2
0
TJ=150℃
TJ=25℃
0
0.4
0.8
1.2
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
TJ ,Junction Temperature (℃ )
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
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PKN2607
P-Ch 20V Fast Switching MOSFETs
10000
1000
100
Ciss
Coss
Crss
F=1.0MHz
10
1
5
9
13
17
21
-VDS , Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
TON
0.001 SINGLE PULSE
T
D = TON/T
TJpeak = TA + PDMx RθJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
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PKN2607
P-Ch 20V Fast Switching MOSFETs
Package Information ( SOT-23 )
5
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