PKN3502 [PACELEADER]
N-Ch 30V Fast Switching MOSFETs;
| 型号： | PKN3502 |
| 厂家： | 
PACELEADER INDUSTRIAL |
| 描述： | N-Ch 30V Fast Switching MOSFETs |
| 文件： | 总5页 (文件大小：1382K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PKN3502
N-Ch 30V Fast Switching MOSFETs
Green Device Available
Super Low Gate Charge
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
30V
27mΩ
5.8A
Description
SOT23 Pin Configuration
The PKN3502 is the high cell density trenched
N-ch MOSFETs, which provides excellent RDSON
and efficiency for most of the small power
switching and load switch applications.
The PKN3502 meet the RoHS and Green Product
requirement with full function reliability approved.
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
30
±12
5.8
V
V
VGS
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
A
4.9
A
20
A
PD@TA=25℃
TSTG
1
W
℃
℃
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
125
85
Unit
℃/W
℃/W
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Ambient 1 (t ≤10s)
RθJA
---
1
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1
PKN3502
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
VGS=0V , ID=250uA
Min.
30
---
---
---
---
0.5
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
Max.
---
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃ , ID=1mA
VGS=10V , ID=5.8A
VGS=4.5V , ID=5A
0.029
---
---
V/℃
27
32
40
1.2
---
RDS(ON)
Static Drain-Source On-Resistance2
m
---
VGS=2.5V , ID=4A
---
VGS(th)
Gate Threshold Voltage
---
V
VGS=VDS , ID =250uA
△VGS(th)
VGS(th) Temperature Coefficient
-2.82
---
mV/℃
VDS=24V , VGS=0V , TJ=25℃
VDS=24V , VGS=0V , TJ=55℃
1
IDSS
Drain-Source Leakage Current
uA
---
5
VGS=±12V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
±100
---
nA
S
VDS=5V , ID=5A
25
Rg
VDS=0V , VGS=0V , f=1MHz
1.5
11.5
1.6
2.9
5
---
Qg
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
---
VDS=15V , VGS=4.5V , ID=5.8A
nC
ns
Qgs
Qgd
Td(on)
Tr
---
---
---
VDD=15V , VGS=10V , RG=3
47.
26
---
ID=5A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
8
---
Ciss
Coss
Crss
Input Capacitance
860
84
---
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
70
---
Diode Characteristics
Symbol
Parameter
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
Min.
---
Typ.
---
Max.
5.8
Unit
A
IS
Continuous Source Current1,4
Diode Forward Voltage2
VSD
---
---
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
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2
PKN3502
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
6
4
2
0
TJ=150℃
TJ=25℃
0
0.3
0.6
0.9
1.2
VSD , Source-to-Drain Voltage (V)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
TJ ,Junction Temperature (℃ )
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
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PKN3502
N-Ch 30V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
0.1
DUTY=0.5
0.2
0.1
0.05
0.02
0.01
0.01
PDM
TON
0.001 SINGLE PULSE
T
D = TON/T
TJpeak = TA + PDMx RθJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
VDS
90%
10%
VGS
Td(on)
Tr
Ton
Td(off)
Tf
Toff
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
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PKN3502
N-Ch 30V Fast Switching MOSFETs
Package Information ( SOT-23 )
5
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