PKN4101 [PACELEADER]
P-Ch 40V Fast Switching MOSFETs;
| 型号： | PKN4101 |
| 厂家： | 
PACELEADER INDUSTRIAL |
| 描述： | P-Ch 40V Fast Switching MOSFETs |
| 文件： | 总5页 (文件大小：1365K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PKN4101
P-Ch 40V Fast Switching MOSFETs
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
-40V
70mΩ
-3.2A
Description
SOT 23 Pin Configuration
The PKN4101 is the high cell density trenched
P-ch MOSFETs, which provides excellent RDSON
and efficiency for most of the small power
switching and load switch applications.
The PKN4101 meet the RoHS and Green Product
requirement with full function reliability approved.
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
10s
Steady State
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
-40
V
V
±20
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ -4.5V1
Continuous Drain Current, VGS @ -4.5V1
Pulsed Drain Current2
-3.7
-3.0
-3.2
-2.6
A
A
-16.1
A
PD@TA=25℃
PD@TA=70℃
TSTG
Total Power Dissipation3
1.32
0.84
1
W
W
℃
℃
Total Power Dissipation3
0.64
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
Unit
℃/W
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t ≤10s)
Thermal Resistance Junction-Case1
125
95
RθJA
---
RθJC
---
80
1
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1
PKN4101
P-Ch 40V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-40
---
Typ.
---
Max.
---
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃ , ID=-1mA
VGS=-4.5V , ID=-3A
-0.018
---
---
V/℃
---
70
100
-2.5
---
RDS(ON)
Static Drain-Source On-Resistance2
m
VGS=-2.5V , ID=-2A
---
---
VGS(th)
Gate Threshold Voltage
-1.0
---
---
V
VGS=VDS , ID =-250uA
△VGS(th)
VGS(th) Temperature Coefficient
2.5
---
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
VDS=-24V , VGS=0V , TJ=55℃
---
-1
IDSS
Drain-Source Leakage Current
uA
---
---
-5
V
GS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
---
---
±100
---
nA
S
VDS=-5V , ID=-3A
---
5.8
6.4
2.1
2.5
4.2
23
Qg
---
---
VDS=-32V , VGS=-4.5V , ID=-3A
nC
Qgs
Qgd
Td(on)
Tr
---
---
---
---
Turn-On Delay Time
Rise Time
---
---
VDD=-20V , VGS=-4.5V ,
---
---
ns
Td(off)
Tf
Turn-Off Delay Time
Fall Time
RG=3.3, ID=-3A
---
26.8
20.6
620
65
---
---
---
Ciss
Coss
Crss
Input Capacitance
---
---
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
---
---
53
---
Diode Characteristics
Symbol
Parameter
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
Min.
---
Typ.
---
Max.
-3.2
-16.1
-1
Unit
A
IS
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
ISM
VSD
---
---
A
---
---
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
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PKN4101
P-Ch 40V Fast Switching MOSFETs
Typical Characteristics
Fig.2 On-Resistance vs. G-S Voltage
Fig.1 Typical Output Characteristics
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
Fig.6 Normalized RDSON vs. TJ
Fig.5 Normalized VGS(th) vs. TJ
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PKN4101
P-Ch 40V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
0.1
DUTY=0.5
0.2
0.1
0.05
0.02
0.01
0.01
PDM
TON
0.001 SINGLE PULSE
T
D = TON/T
TJpeak = TC + PDMx RθJC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
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PKN4101
P-Ch 40V Fast Switching MOSFETs
Package Information ( SOT-23 )
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