PKN3113 [PACELEADER]
P-Ch 30V Fast Switching MOSFETs;
| 型号： | PKN3113 |
| 厂家： | 
PACELEADER INDUSTRIAL |
| 描述： | P-Ch 30V Fast Switching MOSFETs |
| 文件： | 总5页 (文件大小：1321K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PKN3113
P-Ch 30V Fast Switching MOSFETs
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
-30V
40mΩ
-4.2A
Description
SOT23 Pin Configuration
The PKN3113 is the high cell density trenched
P-ch MOSFETs, which provides excellent RDSON
and efficiency for most of the small power
switching and load switch applications.
The PKN3113 meet the RoHS and Green Product
requirement with full function reliability approved.
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
-30
Units
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Pulsed Drain Current2
-4.2
-3.3
A
A
-17
A
PD@TA=25℃
TSTG
Total Power Dissipation3
1
W
℃
℃
Storage Temperature Range
-55 to 150
-55 to 150
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
125
80
Unit
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
RθJC
---
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1
PKN3113
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-30
---
Typ.
---
Max.
---
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃ , ID=-1mA
VGS=-10V , ID=-4A
-0.021
32
---
V/℃
---
40
62
-2.5
---
RDS(ON)
Static Drain-Source On-Resistance2
m
VGS=-4.5V , ID=-2A
---
50
VGS(th)
Gate Threshold Voltage
-1.0
---
-1.5
-4.2
---
V
VGS=VDS , ID =-250uA
△VGS(th)
VGS(th) Temperature Coefficient
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
VDS=-24V , VGS=0V , TJ=55℃
---
1
IDSS
Drain-Source Leakage Current
uA
---
---
5
V
GS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
---
±100
---
nA
S
VDS=-5V , ID=-4A
---
14.8
15
Rg
VDS=0V , VGS=0V , f=1MHz
30
---
Qg
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
---
---
---
---
---
---
---
---
---
---
9.8
2.2
3.4
16.4
20.2
55
VDS=-20V , VGS=-4.5V , ID=-4A
nC
ns
Qgs
Qgd
Td(on)
Tr
---
---
---
VDD=-24V , VGS=-10V , RG=3.3,
---
ID=-1A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
10
---
Ciss
Coss
Crss
Input Capacitance
930
148
115
---
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
---
Diode Characteristics
Symbol
Parameter
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
Min.
---
Typ.
---
Max.
-4.2
-17
Unit
A
IS
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
ISM
VSD
---
---
A
---
---
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
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PKN3113
P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
60
50
40
30
18
ID=-4A
VGS=-10V
15
12
9
VGS=-7V
VGS=-5V
VGS=-4.5V
VGS=-3V
6
3
0
0
0.5
1
1.5
2
4
6
8
10
-VDS , Drain-to-Source Voltage (V)
-VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
8
10
8
VDS=-20V
ID=-4A
6
TJ=150℃
TJ=25℃
6
4
4
2
2
0
0
0
5
10
15
20
0.2
0.4
0.6
0.8
1
-VSD , Source-to-Drain Voltage (V)
QG , Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
TJ ,Junction Temperature ( ℃)
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) v.s TJ
Fig.6 Normalized RDSON v.s TJ
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PKN3113
P-Ch 30V Fast Switching MOSFETs
10000
1000
100
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
10ms
100ms
1s
Coss
Crss
0.10
TA=25℃
DC
Single Pulse
0.01
10
0.1
1
10
100
1
5
9
13
17
21
25
-VDS Drain to Source Voltage(V)
-VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
TON
0.001 SINGLE PULSE
T
D = TON/T
TJpeak = TA + PDMx RθJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
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PKN3113
P-Ch 30V Fast Switching MOSFETs
Package Information ( SOT-23 )
5
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