PKN3103 [PACELEADER]
P-Ch 30V Fast Switching MOSFETs;
| 型号： | PKN3103 |
| 厂家： | 
PACELEADER INDUSTRIAL |
| 描述： | P-Ch 30V Fast Switching MOSFETs |
| 文件： | 总5页 (文件大小：1334K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PKN3103
P-Ch 30V Fast Switching MOSFETs
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
-30V
32mΩ
-4.8A
SOT23 Pin Configuration
Description
The PKN3103 is the high cell density trenched
P-ch MOSFETs, which provide excellent RDSON
and gate charge for most of the synchronous buck
converter applications.
The PKN3103 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
10s
Steady State
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
-30
V
V
±20
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Pulsed Drain Current2
-5.5
-4.3
-4.8
-3.8
A
A
-24
A
PD@TA=25℃
PD@TA=70℃
TSTG
Total Power Dissipation3
1.32
0.84
1
W
W
℃
℃
Total Power Dissipation3
0.64
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
Unit
℃/W
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t ≤10s)
Thermal Resistance Junction-Case1
125
95
RθJA
---
RθJC
---
80
1
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PKN3103
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-30
---
---
---
-1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
Max.
---
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃ , ID=-1mA
VGS=-10V , ID=-4A
-0.022
---
---
V/℃
32
45
-2.5
---
RDS(ON)
Static Drain-Source On-Resistance2
m
VGS=-4.5V , ID=-2A
---
VGS(th)
Gate Threshold Voltage
---
V
VGS=VDS , ID =-250uA
△VGS(th)
VGS(th) Temperature Coefficient
4.6
---
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
VDS=-24V , VGS=0V , TJ=55℃
1
IDSS
Drain-Source Leakage Current
uA
---
5
VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
±100
---
nA
S
VDS=-5V , ID=-4A
15
Rg
VDS=0V , VGS=0V , f=1MHz
13
---
Qg
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
9.7
2.5
3
---
VDS=-15V , VGS=-4.5V , ID=-4A
nC
ns
Qgs
Qgd
Td(on)
Tr
---
---
16.4
20.2
55
---
VDD=-15V , VGS=-10V , RG=3.3,
---
ID=-4A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
10
---
Ciss
Coss
Crss
Input Capacitance
942
165
137
---
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
---
Diode Characteristics
Symbol
Parameter
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
Min.
---
Typ.
---
Max.
-4.8
-24
-1.2
---
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
---
---
A
---
---
V
---
18.3
7.2
nS
nC
IF=-4A , dI/dt=100A/µs , TJ=25℃
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
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PKN3103
P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
60
50
40
30
18
ID= - 4
VGS=-10V
15
12
9
VGS=-7V
VGS=-5V
VGS=-4.5V
VGS=-3V
6
3
0
0
0.5
1
1.5
2
4
6
8
10
-VDS , Drain-to-Source Voltage (V)
-VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
8
10
8
VDS=-20V
ID=-4A
6
TJ=150℃
TJ=25℃
6
4
4
2
2
0
0
0
5
10
15
20
0.2
0.4
0.6
0.8
1
-VSD , Source-to-Drain Voltage (V)
QG , T o t a l G a t e C h a
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2 . 0
1 . 5
1 . 0
0 . 5
1.5
1
0.5
0
- 5 0
0
50
100
150
-50
0
50
100
150
TJ ,Junction Temperature ( ℃)
TJ , J u n c t i o n T e m p℃e)r
Fig.5 Normalized VGS(th) v.s TJ
Fig.6 Normalized RDSON v.s TJ
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PKN3103
P-Ch 30V Fast Switching MOSFETs
10000
1000
100
1 0 0 . 0 0
1 0 . 0 0
1 . 0 0
F=1.0MHz
Ciss
100us
1 0 m
1 0 0 m
1s
Coss
Crss
0 . 1 0
TA= 2 5℃
DC
S i n g l e P
0 . 0 1
10
0 . 1
1
10
100
1
5
9
13
17
21
25
-VDS Drain to Source Voltage(V)
-VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
TON
0.001 SINGLE PULSE
T
D = TON/T
TJpeak = TA + PDMx RθJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
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PKN3103
P-Ch 30V Fast Switching MOSFETs
Package Information ( SOT-23 )
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