PKN3101 [PACELEADER]
P-Ch 30V Fast Switching MOSFETs;
| 型号： | PKN3101 |
| 厂家： | 
PACELEADER INDUSTRIAL |
| 描述： | P-Ch 30V Fast Switching MOSFETs |
| 文件： | 总5页 (文件大小：1353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PKN3101
P-Ch 30V Fast Switching MOSFETs
Product Summary
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
BVDSS
RDSON
ID
-30V
52mΩ
-3.3A
Description
SOT23 Pin Configuration
The PKN3101 is the high cell density trenched
P-ch MOSFETs, which provides excellent RDSON
and efficiency for most of the small power
switching and load switch applications.
The PKN3101 meet the RoHS and Green Product
requirement, with full function reliability approved.
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
10s
Steady State
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
-30
V
V
±20
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Pulsed Drain Current2
-3.8
-3.1
-3.3
-2.7
A
A
-17
A
PD@TA=25℃
PD@TA=70℃
TSTG
Total Power Dissipation3
Total Power Dissipation3
1.32
0.84
1
W
W
℃
℃
0.64
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
Unit
℃/W
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t ≤10s)
Thermal Resistance Junction-Case1
125
95
RθJA
---
RθJC
---
80
1
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1
PKN3101
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-30
---
Typ.
---
Max.
---
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃ , ID=-1mA
VGS=-10V , ID=-3A
-0.023
42
---
V/℃
---
52
RDS(ON)
Static Drain-Source On-Resistance2
m
VGS=-4.5V , ID=-2A
---
75
90
VGS(th)
Gate Threshold Voltage
-1.2
---
-1.6
4
-2.5
---
V
VGS=VDS , ID =-250uA
△VGS(th)
VGS(th) Temperature Coefficient
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
VDS=-24V , VGS=0V , TJ=55℃
---
---
-1
IDSS
Drain-Source Leakage Current
uA
---
---
-5
V
GS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
---
---
±100
---
nA
S
VDS=-5V , ID=-3A
---
11
Qg
---
6.4
2.3
1.9
2.8
8.4
39
9.0
3.2
2.7
5.6
15.1
78.0
12.0
816
140
112
VDS=-15V , VGS=-4.5V , ID=-3A
nC
Qgs
Qgd
Td(on)
Tr
---
---
Turn-On Delay Time
Rise Time
---
VDD=-15V , VGS=-10V , RG=3.3,
---
ns
ID=-3A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
---
6
Ciss
Coss
Crss
Input Capacitance
---
583
100
80
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
---
Diode Characteristics
Symbol
Parameter
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
Min.
---
Typ.
---
Max.
-3.3
-17
-1
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
---
---
A
---
---
V
---
7.8
2.5
---
nS
nC
IF=-3A , dI/dt=100A/µs , TJ=25℃
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
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PKN3101
P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
165
135
105
75
ID= - 3
45
2
4
6
8
10
-VGS (V)
Fig.2 On-Resistance v.s Gate-Source
Fig.1 Typical Output Characteristics
10
8
6
TJ=150℃
TJ=25℃
4
2
0
0
0.2
0.4
0.6
0.8
1
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
1.5
1 . 8
1 . 4
1 . 0
0 . 6
0 . 2
1.0
0.5
0.0
- 5 0
0
50
100
150
-50
0
50
100
150
TJ ,Junction Temperature (℃)
TJ , J u n c t i o n T e m p℃e)r
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs TJ
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PKN3101
P-Ch 30V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
0.1
DUTY=0.5
0.2
0.1
0.05
0.02
0.01
0.01
PDM
TON
0.001 SINGLE PULSE
T
D = TON/T
TJpeak = TC + PDMx RθJC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
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4
PKN3101
P-Ch 30V Fast Switching MOSFETs
Package Information ( SOT-23 )
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