PKN2611 [PACELEADER]
P-Ch 20V Fast Switching MOSFETs;
| 型号： | PKN2611 |
| 厂家： | 
PACELEADER INDUSTRIAL |
| 描述： | P-Ch 20V Fast Switching MOSFETs |
| 文件： | 总5页 (文件大小：1411K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PKN2611
P-Ch 20V Fast Switching MOSFETs
Product Summary
Super Low Gate Charge
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
BVDSS
RDSON
ID
-20V
45mΩ
-4.9A
Description
SOT 23 Pin Configurations
The PKN2611 is the high cell density trenched
P-ch MOSFETs, which provide excellent RDSON
and gate charge for most of the synchronous buck
converter applications.
The PKN2611 meet the RoHS and Green Product
requirement with full function reliability approved.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
VGS
Drain-Source Voltage
-20
V
V
Gate-Source Voltage
±12
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ -4.5V1
Continuous Drain Current, VGS @ -4.5V1
Pulsed Drain Current2
-4.9
-3.9
A
A
-14
A
PD@TA=25℃
PD@TA=70℃
TSTG
Total Power Dissipation3
Total Power Dissipation3
1.31
W
W
℃
℃
0.84
Storage Temperature Range
-55 to 150
-55 to 150
TJ
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
120
95
Unit
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t ≤10s)
RθJA
---
1
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1
PKN2611
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-20
---
---
---
---
-0.4
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
Max.
---
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃ , ID=-1mA
VGS=-4.5V , ID=-4.9A
VGS=-2.5V , ID=-3.4A
VGS=-1.8V , ID=-2A
-0.014
40
---
V/℃
45
RDS(ON)
Static Drain-Source On-Resistance2
m
50
60
65
85
VGS(th)
Gate Threshold Voltage
---
-1.0
---
V
VGS=VDS , ID =-250uA
△VGS(th)
VGS(th) Temperature Coefficient
3.95
---
mV/℃
VDS=-16V , VGS=0V , TJ=25℃
VDS=-16V , VGS=0V , TJ=55℃
-1
IDSS
Drain-Source Leakage Current
uA
---
-5
VGS=±12V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
---
±100
---
nA
S
VDS=-5V , ID=-3A
12.8
10.2
1.89
3.1
Qg
14.3
2.6
VDS=-15V , VGS=-4.5V , ID=-3A
nC
Qgs
Qgd
Td(on)
Tr
4.3
Turn-On Delay Time
Rise Time
5.6
11.2
73
VDD=-10V , VGS=-4.5V ,
40.8
33.6
18
ns
Td(off)
Tf
Turn-Off Delay Time
Fall Time
RG=3.3, ID=-3A
67
36
Ciss
Coss
Crss
Input Capacitance
857
114
108
1200
160
151
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
-4.9
-14
-1
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
---
---
A
VGS=0V , IS=-1A , TJ=25℃
IF=-3A , di/dt=100A/µs ,
TJ=25℃
---
---
V
---
21.8
6.9
---
nS
nC
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
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PKN2611
P-Ch 20V Fast Switching MOSFETs
Typical Characteristics
100
80
-ID=3A
60
40
1
2
3
4
5
-VGS (V)
Fig.2 On-Resistance vs. G-S Voltage
Fig.1 Typical Output Characteristics
4
3
TJ=150℃
TJ=25℃
2
1
0
0
0.2
0.4
0.6
0.8
1
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-charge Characteristics
1.8
1.8
1.4
1.0
0.6
0.2
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
TJ ,Junction Temperature (℃ )
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
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PKN2611
P-Ch 20V Fast Switching MOSFETs
1000
100
10
100.00
10.00
1.00
Ciss
100us
10ms
Coss
Crss
100ms
1s
0.10
DC
TA=25℃
F=1.0MHz
Single Pulse
0.01
1
5
9
13
-VDS (V)
17
21
0.1
1
10
100
-VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
TON
0.001 SINGLE PULSE
T
D = TON/T
TJpeak = TC + PDMx RθJC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
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PKN2611
P-Ch 20V Fast Switching MOSFETs
Package Information ( SOT-23 )
5
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