PKN2609 [PACELEADER]

P-Ch 20V Fast Switching MOSFETs;
PKN2609
型号: PKN2609
厂家: PACELEADER INDUSTRIAL    PACELEADER INDUSTRIAL
描述:

P-Ch 20V Fast Switching MOSFETs

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中文:  中文翻译
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PKN2609  
P-Ch 20V Fast Switching MOSFETs  
Product Summary  
Super Low Gate Charge  
Green Device Available  
Excellent Cdv/dt effect decline  
Advanced high cell density Trench  
technology  
BVDSS  
RDSON  
ID  
-20V  
75mΩ  
-3.1A  
Description  
SOT23 Pin Configuration  
The PKN2609 is the high cell density trenched  
P-ch MOSFETs, which provides excellent RDSON  
and efficiency for most of the small power  
switching and load switch applications.  
The PKN2609 meets the RoHS and Green Product  
requirement with full function reliability approved.  
Absolute Maximum Ratings  
Rating  
Symbol  
Parameter  
Units  
10s  
Steady State  
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
-20  
V
V
±12  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current, VGS @ -4.5V1  
Continuous Drain Current, VGS @ -4.5V1  
Pulsed Drain Current2  
-3.5  
-2.8  
-3.1  
-2.5  
A
A
-15.5  
A
PD@TA=25℃  
PD@TA=70℃  
TSTG  
Total Power Dissipation3  
1.32  
0.84  
1
W
W
Total Power Dissipation3  
0.64  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
RθJA  
Parameter  
Typ.  
---  
Max.  
Unit  
/W  
/W  
/W  
Thermal Resistance Junction-ambient 1  
Thermal Resistance Junction-Ambient 1 (t 10s)  
Thermal Resistance Junction-Case1  
125  
95  
RθJA  
---  
RθJC  
---  
80  
1
www.paceleader.tw  
PKN2609  
P-Ch 20V Fast Switching MOSFETs  
Electrical Characteristics (TJ=25 , unless otherwise noted)  
Symbol  
BVDSS  
Parameter  
Conditions  
VGS=0V , ID=-250uA  
Min.  
-20  
---  
Typ.  
---  
Max.  
---  
Unit  
V
Drain-Source Breakdown Voltage  
BVDSS Temperature Coefficient  
BVDSS/TJ  
Reference to 25, ID=-1mA  
VGS=-4.5V , ID=-3A  
-0.01  
60  
---  
V/℃  
---  
75  
RDS(ON)  
Static Drain-Source On-Resistance2  
m  
VGS=-2.5V , ID=-2A  
---  
85  
105  
-1.2  
---  
VGS(th)  
Gate Threshold Voltage  
-0.5  
---  
-0.7  
2.98  
---  
V
VGS=VDS , ID =-250uA  
VGS(th)  
VGS(th) Temperature Coefficient  
mV/℃  
VDS=-16V , VGS=0V , TJ=25℃  
VDS=-16V , VGS=0V , TJ=55℃  
---  
-1  
IDSS  
Drain-Source Leakage Current  
uA  
---  
---  
-5  
V
GS=±12V , VDS=0V  
IGSS  
gfs  
Gate-Source Leakage Current  
Forward Transconductance  
Total Gate Charge (-4.5V)  
Gate-Source Charge  
Gate-Drain Charge  
---  
---  
±100  
---  
nA  
S
VDS=-5V , ID=-3A  
---  
9
Qg  
---  
9.7  
2.05  
2.43  
4.8  
9.6  
52  
13.6  
2.9  
VDS=-15V , VGS=-4.5V , ID=-3A  
nC  
Qgs  
Qgd  
Td(on)  
Tr  
---  
---  
3.4  
Turn-On Delay Time  
Rise Time  
---  
9.6  
VDD=-10V , VGS=-4.5V , RG=3.3  
---  
17.3  
104  
16.8  
960  
127  
113  
ns  
ID=-3A  
Td(off)  
Tf  
Turn-Off Delay Time  
Fall Time  
---  
---  
8.4  
686  
90.8  
80.4  
Ciss  
Coss  
Crss  
Input Capacitance  
---  
VDS=-15V , VGS=0V , f=1MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
---  
---  
Diode Characteristics  
Symbol  
Parameter  
Conditions  
VG=VD=0V , Force Current  
VGS=0V , IS=-1A , TJ=25℃  
Min.  
---  
Typ.  
---  
Max.  
-3.1  
-15.5  
-1  
Unit  
A
IS  
ISM  
VSD  
trr  
Continuous Source Current1,4  
Pulsed Source Current2,4  
Diode Forward Voltage2  
Reverse Recovery Time  
Reverse Recovery Charge  
---  
---  
A
---  
---  
V
---  
8.4  
3.3  
---  
nS  
nC  
IF=-3A , dI/dt=100A/µs , TJ=25℃  
Qrr  
---  
---  
Note :  
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.  
2.The data tested by pulsed , pulse width 300us , duty cycle 2%  
3.The power dissipation is limited by 150junction temperature  
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.  
2
www.paceleader.tw  
2
PKN2609  
P-Ch 20V Fast Switching MOSFETs  
Typical Characteristics  
280  
240  
200  
160  
120  
80  
ID=-3A  
40  
1
3
5
7
9
11  
-VGS (V)  
Fig.1 Typical Output Characteristics  
Fig.2 On-Resistance vs. Gate-Source  
6
5
4
3
2
1
0
TJ=150  
TJ=25℃  
0.00  
0.30  
0.60  
0.90  
1.20  
-VSD , Source-to-Drain Voltage (V)  
Fig.3 Forward Characteristics Of Reverse  
Fig.4 Gate-Charge Characteristics  
1.8  
1.4  
1.0  
0.6  
0.2  
1.8  
1.4  
1
0.6  
0.2  
-50  
0
50  
100  
150  
-50  
0
50  
100  
150  
TJ ,Junction Temperature ()  
TJ , Junction Temperature ()  
Fig.6 Normalized RDSON vs. TJ  
Fig.5 Normalized VGS(th) vs. TJ  
3
www.paceleader.tw  
3
PKN2609  
P-Ch 20V Fast Switching MOSFETs  
1000  
100  
10  
Ciss  
Coss  
Crss  
F=1.0MHz  
1
5
9
13  
17  
21  
-VDS , Drain to Source Voltage (V)  
Fig.7 Capacitance  
Fig.8 Safe Operating Area  
1
DUTY=0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
0.01  
0.01  
PDM  
TON  
0.001 SINGLE PULSE  
T
D = TON/T  
TJpeak = TC + PDMx RθJC  
0.0001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t , Pulse Width (s)  
Fig.9 Normalized Maximum Transient Thermal Impedance  
Fig.10 Switching Time Waveform  
Fig.11 Gate Charge Waveform  
4
www.paceleader.tw  
4
PKN2609  
P-Ch 20V Fast Switching MOSFETs  
Package Information ( SOT-23 )  
5
www.paceleader.tw  

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