FDD4141 [ONSEMI]
P 沟道,PowerTrench® MOSFET,-40V,-50A,12.3mΩ;型号: | FDD4141 |
厂家: | ONSEMI |
描述: | P 沟道,PowerTrench® MOSFET,-40V,-50A,12.3mΩ PC 开关 脉冲 晶体管 |
文件: | 总8页 (文件大小:454K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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April 2015
FDD4141
P-Channel PowerTrench® MOSFET
-40V, -50A, 12.3mΩ
Features
General Description
Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A
Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
High performance trench technology for extremely low rDS(on)
RoHS Compliant
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications. and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications.
Applications
Inverter
Power Supplies
S
D
G
G
S
D-PAK
(TO-252)
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
-40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±20
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25°C
C = 25°C
-50
T
-58
ID
A
TA = 25°C
(Note 1a)
(Note 3)
-10.8
-100
337
-Pulsed
EAS
Single Pulse Avalanche Energy
Power Dissipation
mJ
W
TC = 25°C
TA = 25°C
69
PD
Power Dissipation
(Note 1a)
2.4
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.8
52
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
16mm
Quantity
FDD4141
FDD4141
D-PAK (TO-252)
2500 units
www.fairchildsemi.com
©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.1.2
1
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
-40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250µA, referenced to 25°C
-29
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -32V, VGS = 0V
VGS = ±20V, VDS = 0V
-1
µA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
-1
-1.8
5.8
-3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
mV/°C
VGS = -10V, ID = -12.7A
VGS = -4.5V, ID = -10.4A
10.1
14.5
12.3
18.0
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = -10V, ID = -12.7A,
TJ = 125°C
15.3
38
18.7
gFS
VDS = -5V, ID = -12.7A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
2085
360
210
4.6
2775
480
pF
pF
pF
Ω
VDS = -20V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
310
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
10
7
19
13
60
27
50
27
ns
ns
VDD = -20V, ID = -12.7A,
VGS = -10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
38
15
36
19
7
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0V to -10V
nC
nC
nC
nC
VDD = -20V,
ID = -12.7A
Qg
VGS = 0V to -5V
Qgs
Qgd
8
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = -12.7A (Note 2)
-0.8
29
-1.2
44
V
ns
nC
IF = -12.7A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
26
40
Notes:
1:
R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while
R
is determined by the user’s board design.
θJA
a)
52°C/W when mounted on a
1 in pad of 2 oz copper
b) 100°C/W when mounted
on a minimum pad.
2
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T = 25°C, L = 3mH, I = 15A, V = 40V, V = 10V.
J
AS
DD
GS
2
©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.1.2
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
80
VGS = -3V
V
= -4.5V
GS
VGS = -3.5V
V
= -4V
GS
60
40
20
0
V
= -10V
GS
VGS = -4V
V
V
= -3.5V
= -3V
GS
VGS = -4.5V
VGS = -10V
80
GS
0
20
40
60
100
0
1
2
3
4
5
-ID, DRAIN CURRENT(A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.8
55
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = -12.7A
VGS = -10V
ID = -12.7A
1.6
1.4
1.2
1.0
0.8
0.6
45
35
25
15
5
TJ = 125oC
TJ = 25oC
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
100
100
VGS = 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
80
60
40
20
0
10
1
VDS = -5V
TJ = 150oC
TJ = 25oC
0.1
TJ = 150oC
TJ = 25oC
0.01
1E-3
TJ = -55oC
1.0
TJ = -55oC
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
3
©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.1.2
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
10000
1000
100
10
ID = -12.7A
8
Ciss
VDD = -15V
6
VDD = -20V
VDD = -10V
Coss
4
2
0
f = 1MHz
= 0V
Crss
V
GS
40
0.1
1
10
0
8
16
24
32
40
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
60
50
40
30
20
10
0
30
10
VGS = -4.5V
VGS = -10V
TJ = 125oC
TJ = 25oC
Limited by Package
R
θJC = 1.8oC/W
1
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
tAV, TIME IN AVALANCHE(ms)
TC, CASE TEMPERATURE (oC)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
10000
200
100
VGS = -10V
SINGLE PULSE
o
100us
R
θJC = 1.8 C/W
10
1
1000
THIS AREA IS
LIMITED BY rDS(on)
1ms
10ms
SINGLE PULSE
TJ = MAX RATED
RθJC = 1.8oC/W
TC = 25oC
DC
100
50
0.1
0.1
10-5 10-4 10-3 10-2 10-1 100 101 102 103
t, PULSE WIDTH (s)
1
10
100
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
4
©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.1.2
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
0.01
R
θJC = 1.8oC/W
J
DM
θJC
θJC C
0.005
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
5
©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.1.2
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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FAIRCHILD
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