FDD4243-F085P [ONSEMI]
P 沟道，PowerTrench® MOSFET，-40V，-14A，64mΩ;
| 型号： | FDD4243-F085P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-40V，-14A，64mΩ 开关 晶体管 |
| 文件： | 总8页 (文件大小：422K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDD4243-F085
®
P-Channel PowerTrench MOSFET
-40V, -14A, 64mΩ
Features
Applications
Inverter
Typ rDS(on) = 36m at VGS = -10V, ID = -6.7A
Typ rDS(on) = 48m at VGS = -4.5V, ID = -5.5A
Typ Qg(TOT) = 21nC at VGS = -10V
Power Supplies
High performance trench technology for extremely low
rDS(on)
RoHS Compliant
Qualified to AEC Q101
©2010 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Publication Order Number:
FDD4243-F085/D
1
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
-40
±20
V
V
VGS
Drain Current Continuous (TC< 130oC, VGS = 10V)
-14
ID
A
Pulsed
See Figure 4
84
EAS
PD
Single Pulse Avalanche Energe
Power Dissipation
Dreate above 25oC
(Note 1)
mJ
W
W/oC
oC
50
0.34
TJ, TSTG Operating and Storage Temperature
-55 to +175
Thermal Characteristics
RJC
RJA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
3
oC/W
oC/W
40
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
2500 units
FDD4243
FDD4243-F085
TO252
13”
Note:
1. A suffix as “...F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced
in Aug 2014.
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250A, VGS = 0V
-40
-
-
-
-
V
Breakdown Voltage Temperature
Coefficient
BVDSS
TJ
ID = -250μA, referenced to 25°C
-32
mV/°C
-
-
-
-
-
-1
V
DS = -32V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
A
TJ = 125oC
-100
±100
VGS = ±20V
-
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250A
-1.4
-
-1.6
4.7
-3.0
-
V
VGS(th) Gate to Source Threshold Voltage
ID = –250μA, referenced to 25°C
mV/°C
TJ
rDS(on)
gFS
Temperature Coefficient
I
D = -6.7A, VGS= -10V
-
-
36
48
57
44
64
70
ID = -5.5A, VGS= -4.5V
Drain to Source On Resistance
Forward Transconductance
m
ID = -6.7A, VGS= -10V,
TJ = 150oC
-
-
ID = –6.7A, VDS = –5V,
23
-
S
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
1165
165
90
1550
220
135
-
pF
pF
pF
VDS = -20V, VGS = 0V,
f = 1MHz
Coss
Crss
RG
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
4
Qg(TOT)
Qgs
Total Gate Charge
21
29
-
nC
nC
VDD = -20V, VGS = -10V
ID = -6.7A
Gate to Source Gate Charge
3.4
Qgd
Gate to Drain “Miller“ Charge
-
4
-
nC
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2
Electrical Characteristics TJ = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
-
-
-
-
6
15
22
7
12
26
35
14
ns
ns
ns
ns
V
DD = -20V, ID = -6.7A
VGS = -10V, RGEN = 6
Turn-Off Delay Time
Fall Time
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Voltage
Reverse Recovery Time
ISD = -6.7A, VGS=0V
-
-
-
-0.86
29
-1.2
43
V
ns
nC
ISD = -6.7A, dISD/dt = 100A/s
Qrr
Reverse Recovery Charge
30
44
Note:
2. Starting T = 25°C, L = 3mH, I = 7.5A, V = 10V, V = 40V during the inductor charging time and 0V during the time in avalanche.
J
AS
GS
DD
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All ON Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
www.onsemi.com
3
Typical Characteristics
30
20
10
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
CURRENT LIMITED
BY PACKAGE
V
GS
= -10V
V
= -4.5V
GS
R
JC
= 3oC/W
50
25
75
100
125
150
175
0
25
50
75
100
125
o
150
175
o
TC, CASE TEMPERATURE ( C)
TC, CASE TEMPERATURE( C)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
P
DM
t
1
t
SINGLE PULSE
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
JA
JA A
0.001
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
TC = 25oC
FOR TEMPERATURES
VGS = 10V
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
100
SINGLE PULSE
10
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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4
Typical Characteristics
40
10
300
100
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DD
AV
AS
DSS
100us
10
1
STARTING TJ = 25oC
1ms
10ms
DC
STARTING TJ = 150oC
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
T
J
= MAX RATED
o
T
C
= 25 C
1
0.1
1
0.1
1
10
100
1
10
90
tAV, TIME IN AVALANCHE (ms)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
60
60
PULSE DURATION = 80s
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
50
50
TJ = -55oC
VDD = -5V
VGS = -10V
40
40
VGS = -6V
VGS = -4.5V
TJ = 25oC
TJ = 175oC
VGS = -5V
30
30
20
VGS = -4V
20
10
VGS = -3V
10
0
0
0
1
2
3
4
0
1
2
3
4
5
6
-VGS, GATE TO SOURCE VOLTAGE (V)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
200
2.0
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
ID = -6.7A
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
180
160
140
120
100
80
1.8
1.6
1.4
1.2
1.0
0.8
0.6
TJ = 175oC
60
TJ = 25oC
ID = -6.7A
40
VGS = -10V
20
2
4
6
8
10
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE(oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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5
Typical Characteristics
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.15
1.10
1.05
1.00
0.95
0.90
VGS = VDS
ID = -250A
I
D
= -250A
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
TJ, JUNCTION TEMPERATURE ( C)
TJ, JUNCTION TEMPERATURE( C)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
5000
V
DD
= -10V
Ciss
8
6
4
2
0
1000
V
DD
= -20V
V
DD
= -30V
Coss
100
Crss
f = 1MHz
VGS = 0V
10
0.1
0
4
8
12
16
20
24
1
10
100
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
www.onsemi.com
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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