FDD4141_10 [FAIRCHILD]
P-Channel PowerTrench® MOSFET -40V, -50A, 12.3mΩ; P沟道MOSFET PowerTrench® -40V ， -50A ， 12.3mÎ ©
| 型号： | FDD4141_10 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | P-Channel PowerTrench® MOSFET -40V, -50A, 12.3mΩ |
| 文件： | 总6页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2010
FDD4141_F085
P-Channel PowerTrench® MOSFET
-40V, -50A, 12.3mΩ
Features
General Description
Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A
Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
High performance trench technology for extremely low rDS(on)
Qualified to AEC Q101
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications. and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications.
RoHS Compliant
Applications
Inverter
Power Supplies
S
D
G
G
S
D-PAK
(TO-252)
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
-40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±20
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25°C
C = 25°C
-50
T
-58
ID
A
TA = 25°C
(Note 1a)
(Note 3)
-10.8
-100
337
-Pulsed
EAS
Single Pulse Avalanche Energy
Power Dissipation
mJ
W
TC = 25°C
TA = 25°C
69
PD
Power Dissipation
(Note 1a)
2.4
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
1.8
52
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12mm
Quantity
FDD4141
FDD4141_F085
D-PAK (TO-252)
2500 units
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDD4141_F085 Rev.C
1
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250μA, VGS = 0V
-40
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = -250μA, referenced to 25°C
-29
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -32V, VGS = 0V
VGS = ±20V, VDS = 0V
-1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250μA
-1
-1.8
5.8
-3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250μA, referenced to 25°C
mV/°C
V
GS = -10V, ID = -12.7A
10.1
14.5
12.3
18.0
VGS = -4.5V, ID = -10.4A
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = -10V, ID = -12.7A,
TJ = 125°C
15.3
38
18.7
gFS
VDS = -5V, ID = -12.7A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
2085
360
210
4.6
2775
480
pF
pF
pF
Ω
VDS = -20V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
310
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
10
7
19
13
60
27
50
27
ns
ns
VDD = -20V, ID = -12.7A,
V
GS = -10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
38
15
36
19
7
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0V to -10V
VGS = 0V to -5V
nC
nC
nC
nC
VDD = -20V,
D = -12.7A
Qg
I
Qgs
Qgd
8
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = -12.7A (Note 2)
-0.8
29
-1.2
44
V
ns
nC
IF = -12.7A, di/dt = 100A/μs
Qrr
Reverse Recovery Charge
26
40
Notes:
1: R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while R
is determined by the user’s board design.
θJA
a)
52°C/W when mounted on a
1 in pad of 2 oz copper
b) 100°C/W when mounted
on a minimum pad.
2
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3: Starting T = 25°C, L = 3mH, I = 15A, V = 40V, V = 10V.
J
AS
DD
GS
2
©2010 Fairchild Semiconductor Corporation
FDD4141_F085 Rev.C
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
80
VGS = -3V
V
= -4.5V
GS
VGS = -3.5V
V
= -4V
GS
60
40
20
0
V
= -10V
GS
VGS = -4V
V
V
= -3.5V
= -3V
GS
VGS = -4.5V
VGS = -10V
80
GS
0
20
40
60
100
0
1
2
3
4
5
-ID, DRAIN CURRENT(A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.8
55
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
ID = -12.7A
GS = -10V
ID = -12.7A
V
1.6
1.4
1.2
1.0
0.8
0.6
45
35
25
15
5
TJ = 125oC
TJ = 25oC
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
100
100
VGS = 0V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
80
60
40
20
0
10
1
VDS = -5V
TJ = 150oC
TJ = 25oC
0.1
TJ = 150oC
TJ = 25oC
0.01
TJ = -55oC
1.0
TJ = -55oC
1E-3
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
3
©2010 Fairchild Semiconductor Corporation
FDD4141_F085 Rev.C
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
10000
1000
100
10
ID = -12.7A
8
Ciss
VDD = -15V
6
VDD = -20V
VDD = -10V
Coss
4
2
0
f = 1MHz
= 0V
Crss
V
GS
40
0.1
1
10
0
8
16
24
32
40
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
60
50
40
30
20
10
0
30
10
VGS = -4.5V
VGS = -10V
TJ = 125oC
TJ = 25oC
Limited by Package
R
θJC = 1.8oC/W
1
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
tAV, TIME IN AVALANCHE(ms)
TC, CASE TEMPERATURE (oC)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
200
100
10000
VGS = -10V
SINGLE PULSE
100us
o
RθJC = 1.8 C/W
10
1
1000
1ms
10ms
DC
SINGLE PULSE
OPERATION IN THIS
T
= MAX RATED
J
100
50
AREA MAY BE
LIMITED BY r
o
T
= 25
C
C
DS(on)
0.1
10-5 10-4 10-3 10-2 10-1 100 101 102 103
t, PULSE WIDTH (s)
0.1
1
10
100
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
4
©2010 Fairchild Semiconductor Corporation
FDD4141_F085 Rev.C
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
0.01
R
θJC = 1.8oC/W
J
DM
θJC
θJC C
0.005
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
5
©2010 Fairchild Semiconductor Corporation
FDD4141_F085 Rev.C
www.fairchildsemi.com
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Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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Not In Production
Rev. I48
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©2010 Fairchild Semiconductor Corporation
FDD4141_F085 Rev.C
6
相关型号：
FDD4243_F085
Power Field-Effect Transistor, 14A I(D), 40V, 0.044ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
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