FDD4243 [FAIRCHILD]
40V P-Channel PowerTrench MOSFET -40V, -14A, 44mohm; 40V P沟道PowerTrench MOSFET -40V ， -14A ， 44mohm
| 型号： | FDD4243 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mohm |
| 文件： | 总6页 (文件大小：431K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2006
FDD4243
40V P-Channel PowerTrench® MOSFET
-40V, -14A, 44mΩ
Features
General Description
Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A
Max rDS(on) = 64mΩ at VGS = -4.5V, ID = -5.5A
High performance trench technology for extremely low rDS(on)
RoHS Compliant
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications.
Application
Inverter
Power Supplies
S
D
G
G
S
D-PAK
(TO-252)
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
-40
V
V
±20
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC= 25°C
TC= 25°C
TA= 25°C
-14
(Note 1)
-24
ID
A
(Note 1a)
-6.7
-Pulsed
-60
EAS
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
84
mJ
W
TC= 25°C
42
3
PD
Power Dissipation
(Note 1a)
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
3.0
40
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12mm
Quantity
FDD4243
FDD4243
D-PAK(TO-252)
2500 units
1
©2006 Fairchild Semiconductor Corporation
FDD4243 Rev.C
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
ID = -250µA, referenced to 25°C
VDS = -32V,
-40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
-32
mV/°C
-1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
VGS = 0V
TJ = 125°C
-100
±100
VGS = ±20V, VGS = 0V
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
-1
-1.6
-3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
4.7
mV/°C
VGS = -10V, ID = -6.7A
36
48
53
16
44
64
69
rDS(on)
Drain to Source On Resistance
VGS = -4.5V, ID = -5.5A
mΩ
VGS = -10V, ID = -6.7A, TJ = 125°C
VDS = -5V, ID = -6.7A
gFS
Forward Transconductance
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1165
165
90
1550
220
pF
pF
pF
Ω
VDS = -20V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
135
f = 1MHz
4
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
6
15
22
7
12
26
35
14
29
ns
ns
VDD = -20V, ID = -6.7A
VGS = -10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg(TOT)
Qgs
Qgd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
21
3.4
4
nC
nC
nC
VDD = -20V, ID = -6.7A
VGS = -10V
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = -6.7A (Note 2)
IF = -6.7A, di/dt = 100A/µs
0.86
29
1.2
43
44
V
ns
nC
Qrr
Reverse Recovery Charge
30
Notes:
1:
R
is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
is
θJA
θJC
guaranteed by design while R
is determined by the user’s board design.
θJC
2
a.40°C/Wwhenmounted on a1in pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T = 25°C, L = 3mH, I = 7.5A, V = 40V, V = 10V.
J
AS
DD
GS
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2
FDD4243 Rev.C
Typical Characteristics TJ = 25°C unless otherwise noted
60
50
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS = -3.0V
VGS = -4V
V
= -10V
= - 6V
= -5V
GS
V
= -4.5V
= -4V
GS
VGS = -4.5V
V
40
30
20
10
0
GS
VGS = -5V
VGS = -6V
V
GS
V
GS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= -3.0V
GS
VGS = -10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
1
2
3
4
5
0
10
20
30
40
50
60
-V , DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT(A)
DS
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
120
1.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = -6.7A
GS = -10V
I
D
= -6.7A
V
1.6
1.4
1.2
1.0
0.8
0.6
100
80
60
40
20
T
= 125oC
= 25oC
J
T
J
2
3
4
5
6
7
8
9
10
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
60
30
10
V
GS
= 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
50
T = 150oC
J
40
30
20
10
0
T = 150oC
J
T
J
= 25oC
T
= 25oC
J
1
T
J
= -55oC
T
J
= -55oC
1.0
0.1
0.4
0.6
0.8
1.2
1
2
3
4
5
6
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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3
FDD4243 Rev.C
Typical Characteristics TJ = 25°C unless otherwise noted
10
3000
1000
I
D
= -6.7A
V
DD
= -10V
8
6
4
2
0
C
iss
V
= -20V
DD
V
DD
= -30V
C
oss
f = 1MHz
= 0V
100
50
C
rss
V
GS
30
0.1
1
10
0
4
8
12
16
20
24
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
25
20
15
10
5
10
8
V
= -10V
GS
6
TJ = 25oC
4
Limited by Package
= 3.0oC/W
2
TJ = 125oC
V
GS
= -4.5V
R
θJC
0
25
1
0.01
50
75
100
125
150
0.1
1
10
30
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
10000
100
10
1
FOR TEMPERATURES
o
VGS = -10V
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
100us
150 – T
C
1000
I = I
----------------------
25
125
o
T
= 25 C
C
1ms
10ms
100
30
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
100ms
T
= MAX RATED
= 25OC
J
SINGLE PULSE
T
C
0.1
0.5
10-5
10-4
10-3
10-2
10-1
100
101
1
10
100
t, PULSE WIDTH (s)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
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4
FDD4243 Rev.C
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
P
0.02
0.01
0.1
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
0.01
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
SINGLE PULSE
10-4
0.003
10-5
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
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5
FDD4243 Rev.C
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed
Obsolete
Full Production
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any time without notice to improve design.
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This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
Rev. I22
相关型号：
FDD4243_F085
Power Field-Effect Transistor, 14A I(D), 40V, 0.044ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
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