FDD4141-F085 [ONSEMI]
P 沟道，PowerTrench® MOSFET，-40V，-50A，12.3mΩ;
| 型号： | FDD4141-F085 |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-40V，-50A，12.3mΩ PC 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：492K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDD4141-F085
P-Channel PowerTrench® MOSFET
-40V, -50A, 12.3mΩ
General Description
Features
This P-Channel MOSFET has been produced using ON
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized Bvdss capability to offer
Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A
Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
High performance trench technology for extremely low rDS(on)
Qualified to AEC Q101
superior performance benefit in the applications. and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications.
Applications
Inverter
RoHS Compliant
Power Supplies
S
D
G
G
S
D-PAK
(TO-252)
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
-40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±20
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25°C
TC = 25°C
TA = 25°C
-50
-58
ID
A
(Note 1a)
(Note 3)
-10.8
-100
337
-Pulsed
EAS
Single Pulse Avalanche Energy
Power Dissipation
mJ
W
TC = 25°C
TA = 25°C
69
PD
Power Dissipation
(Note 1a)
2.4
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +175
°C
Thermal Characteristics
RθJC
RθJA
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
1.8
52
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
16mm
Quantity
FDD4141
FDD4141-F085
D-PAK (TO-252)
2500 units
Publication Order Number:
FDD4141-F085/D
©2013 Semiconductor Components Industries, LLC.
November-2018, Rev.4
1
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250μA, VGS = 0V
-40
-
-
-
-
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = -250μA, referenced to 25°C
-29
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -32V, VGS = 0V
VGS = ±20V, VDS = 0V
-
-
-
-
-1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250μA
-1
-
-1.8
5.8
-3
-
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250μA, referenced to 25°C
mV/°C
V
GS = -10V, ID = -12.7A
-
-
10.1
14.5
12.3
18.0
VGS = -4.5V, ID = -10.4A
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = -10V, ID = -12.7A,
TJ = 175°C
-
-
17.3
38
19.4
-
gFS
VDS = -5V, ID = -12.7A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
-
-
2085
360
210
4.6
2775
480
310
-
pF
pF
pF
Ω
VDS = -20V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
f = 1MHz
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
-
10
7
19
13
60
27
50
27
-
ns
ns
VDD = -20V, ID = -12.7A,
V
GS = -10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
38
15
36
19
7
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0V to -10V
VGS = 0V to -5V
nC
nC
nC
nC
VDD = -20V,
D = -12.7A
Qg
I
Qgs
Qgd
8
-
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = -12.7A (Note 2)
-
-
-0.8
29
-1.2
44
V
ns
nC
IF = -12.7A, di/dt = 100A/μs
Qrr
Reverse Recovery Charge
-
26
40
Notes:
1:
R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while
R
is determined by the user’s board design.
θJA
a)
52°C/W when mounted on a
1 in pad of 2 oz copper
b) 100°C/W when mounted
on a minimum pad.
2
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3: Starting T = 25°C, L = 3mH, I = 15A, V = 40V, V = 10V.
J
AS
DD
GS
www.onsemi.com
2
Typical Characteristics TJ = 25°C unless otherwise noted
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
80
VGS = -3V
V
= -4.5V
GS
VGS = -3.5V
V
= -4V
GS
60
40
20
0
V
= -10V
GS
VGS = -4V
V
V
= -3.5V
= -3V
GS
VGS = -4.5V
VGS = -10V
80 100
GS
0
20
40
60
0
1
2
3
4
5
-ID, DRAIN CURRENT(A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
2.0
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
ID =-12.7A
80
60
40
20
0
TJ = 175oC
ID = -12.7A
GS = -10V
V
TJ = 25oC
-80
-40
0
40
80
120
160
200
2
4
6
8
10
TJ, JUNCTION TEMPERATURE(oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
100
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
80
60
40
20
0
10
1
VDD = -5V
TJ = 175 o
C
TJ = -55 o
C
C
0.1
TJ = 175oC
TJ = 25 o
0.01
TJ = 25oC
TJ = -55oC
1E-3
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
www.onsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
10000
1000
100
10
ID = -12.7A
8
Ciss
VDD = -15V
6
VDD = -20V
VDD = -10V
Coss
4
2
0
f = 1MHz
= 0V
Crss
V
GS
40
0.1
1
10
0
8
16
24
32
40
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
60
50
40
30
20
10
0
200
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
100
10
1
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
VGS = -4.5V
VGS = -10V
Limited by Package
STARTING TJ = 25oC
STARTING TJ = 150oC
R
θJC = 1.8oC/W
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
10000
1000
100
10
VGS = -10V
SINGLE PULSE
o
RθJC = 1.8 C/W
1000
100us
1ms
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
1
100ms
T
J
= MAX RATED
100
50
o
T
C
= 25
C
10-5 10-4 10-3 10-2 10-1 100 101 102 103
t, PULSE WIDTH (s)
0.1
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
www.onsemi.com
4
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
RθJC = 1.8oC/W
PEAK T = P
x Z
x R
+ T
0.01
J
DM
θJC
θJC C
0.005
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
www.onsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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www.onsemi.com
❖
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