APT10090BLLG [MICROSEMI]
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Microsemi 
APT10090BLL
APT10090SLL
1000V 12A 0.950Ω
BLL
POWER MOS 7 MOSFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switch-
ing losses are addressed with Power MOS 7® by significantly lowering
RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching
losses along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
D3PAK
SLL
D
S
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
G
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol
VDSS
ID
Parameter
APT10090
1000
12
UNIT
Drain-Source Voltage
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
48
IDM
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
VGS
±40
VGSM
Watts
W/°C
298
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
PD
2.4
Operating and Storage Junction Temperature Range
-55 to 150
300
TJ,TSTG
TL
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
12
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
1
30
EAR
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1210
EAS
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
1000
12
TYP
MAX
UNIT
Volts
Amps
Ohms
μA
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
2
0.95
100
RDS(on) Drain-Source On-State Resistance
(VGS = 10V, 6A)
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
IDSS
500
±100
nA
IGSS
3
5
Volts
VGS(th)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT10090BLL - SLL
MIN
TYP
MAX
Test Conditions
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
1969
332
55
71
12
47
9
V
= 0V
GS
Output Capacitance
V
= 25V
pF
DS
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
GS
V
= 500V
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
nC
ns
I
= 12A @ 25°C
D
RESISTIVE SWITCHING
V
= 15V
GS
5
V
= 500V
DD
td(off)
I
= 12A @ 25°C
23
Turn-off Delay Time
Fall Time≤
D
R
= .6Ω
G
tf
4
INDUCTIVE SWITCHING @ 25°C
6
Eon
Eoff
Eon
Eoff
334
77
Turn-on Switching Energy
V
= 670V, V = 15V
GS
DD
I
= 12A, R = 5Ω
Turn-off Switching Energy
D
G
μJ
INDUCTIVE SWITCHING @ 125°C
6
672
100
Turn-on Switching Energy
V
= 670V V = 15V
GS
DD
I
= 12A, R = 5Ω
Turn-off Switching Energy
D
G
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
UNIT
MIN
TYP
MAX
12
IS
Continuous Source Current (Body Diode)
Amps
1
48
ISM
VSD
t rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
1.3
Volts
ns
(VGS = 0V, IS = -ID12A)
700
9.0
Reverse Recovery Time (IS = -ID12A, dlS/dt = 100A/μs)
μC
Q rr
Reverse Recovery Charge (IS = -ID12A, dlS/dt = 100A/μs)
dv
5
Peak Diode Recovery dv
/
dt
V/ns
10
/
dt
THERMAL CHARACTERISTICS
Symbol Characteristic
UNIT
MIN
TYP
MAX
0.42
40
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
4 Starting T = +25°C, L = 16.81mH, R = 25Ω, Peak I = 12A
j
G
L
dv
5
/ numbers reflect the limitations of the test circuit rather than the
dt
di
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
device itself.
I
≤ -I 12A
/
≤ 700A/μs
V
R ≤V
T ≤150°C
J
S
D
DSS
dt
6 Eon includes diode reverse recovery measured in accordance wtih
JEDEC standard JESD24-1. See figures 18, 20.
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.45
0.40
0.9
0.35
0.7
0.30
0.25
0.5
0.20
Note:
0.15
0.3
t
1
t
0.10
2
t
1
t
/
2
0.1
Duty Factor D =
Peak T = P x Z
0.05
+ T
C
J
DM
θJC
0.05
SINGLE PULSE
10-3
0
10-5
10-4
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT10090BLL - SLL
Typical Performance Curves
30
25
20
15
10
7V
VGS =15,10V& 7.5V
6.5
6V
5.5V
5V
5
0
0
5
10
15
20
25
30
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, LOW VOLTAGE OUTPUT CHARACTERISTICS
30
1.40
NORMALIZED TO
TJ = -55°C
V
= 10V @ I = 6A
D
GS
1.30
1.20
1.10
1.00
25
20
15
10
TJ = +125°C
TJ = +25°C
VGS=10V
VGS=20V
VDS> ID (ON) x RDS(ON) MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
0.90
0.80
5
0
0
1
2
3
4
5
6
7
8
0
5
10
15
20
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 3, TRANSFER CHARACTERISTICS
FIGURE 4, R
vs DRAIN CURRENT
DS(ON)
1.15
1.10
1.05
1.00
0.95
12
10
8
6
4
0.90
0.85
2
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
FIGURE 5, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
T , JUNCTION TEMPERATURE (°C)
FIGURE 6, BREAKDOWN VOLTAGE vs TEMPERATURE
C
J
2.5
1.2
I
= 6A
D
V
= 10V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
FIGURE 8, THRESHOLD VOLTAGE vs TEMPERATURE
J
C
FIGURE 7, R
vs. TEMPERATURE
DS(ON)
Typical Performance Curves
APT10090BLL - SLL
48
10,000
1,000
OPERATION HERE
LIMITED BY R
(ON)
DS
Ciss
10
100μS
Coss
1mS
1
100
10
10mS
Crss
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
V
10
100
1000
0
V
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
20
30
40
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 9, MAXIMUM SAFE OPERATING AREA
DS
FIGURE 10, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
16
200
I
= 12A
D
100
12
VDS=200V
VDS=500V
TJ =+150°C
TJ =+25°C
VDS=800V
8
10
4
0
1
0
10 20 30 40 50 60 70 80 90 100
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
g
SD
FIGURE 11, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 12, SOURCE-DRAIN DIODE FORWARD VOLTAGE
60
40
td(off)
tf
50
40
30
V
= 670V
DD
= 5W
R
T
G
= 125°C
J
30
20
20
L = 100μH
V
= 670V
DD
= 5W
R
T
G
tr
= 125°C
J
L = 100μH
10
0
td(on)
10
0
5
10
15
20
0
5
10
(A)
15
20
I
(A)
I
D
D
FIGURE 13, DELAY TIMES vs CURRENT
FIGURE 14, RISE AND FALL TIMES vs CURRENT
1200
1000
800
1200
V
= 670V
DD
= 5W
Eon
R
T
G
1000
= 125°C
J
L = 100μH
EON includes
800
Eon
diode reverse recovery.
600
600
V
I
= 670V
400
400
DD
= 12A
D
T
= 125°C
Eoff
J
Eoff
L = 100μH
200
0
200
0
EON includes
diode reverse recovery.
5
10
15
20
0
5
10 15 20 25 30 35 40 45 50
R , GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY VS. GATE RESISTANCE
I
(A)
D
G
FIGURE 15, SWITCHING ENERGY vs CURRENT
APT10090BLL - SLL
Typical Performance Curves
Gate Voltage
90%
t
10 %
Gate Voltage
T
= 125 C
T
= 125 C
J
J
t
d(off)
d(on)
t
r
Drain Current
Drain Voltage
Drain Current
90%
90%
5 %
5 %
10%
0
10 %
Drain Voltage
t
f
Switching Energy
Switching Energy
Figure 17, Turn-on Switching Waveforms and Definitions
Figure 18, Turn-off Switching Waveforms and Definitions
APT15DF120B
VCE
IC
VDD
G
D.U.T.
Figure 19, Inductive Switching Test Circuit
Figure 20, nducive Swtchng TesCrcui
3
D PAK Package Outline
TO-247 (B) Package Outline
e3 100% Sn Plated
4.98 (.196)
4.69 (.185)
15.95 (.628)
16.05(.632)
13.41 (.528)
13.51(.532)
5.31 (.209)
5.08 (.200)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15(.045)
1.49 (.059)
2.49 (.098)
1.47 (.058)
1.57 (.062)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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