APT100GF60JR [ADPOW]
The Fast IGBT is a new generation of high voltage power IGBTs.; 快速IGBT是新一代高压功率IGBT的。
| 型号： | APT100GF60JR |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | The Fast IGBT is a new generation of high voltage power IGBTs. |
| 文件： | 总3页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT100GF60JR
600V 100A
E
E
Fast IGBT
C
G
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
SOT-227
• Low Forward Voltage Drop
• Low Tail Current
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
ISOTOP®
C
• Avalanche Rated
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
UNIT
APT100GF60JR
Collector-EmitterVoltage
VCES
VCGR
VGE
IC1
600
600
Volts
Collector-Gate Voltage (RGE = 20KW)
Gate-EmitterVoltage
±20
4
Continuous Collector Current
@ TC = 25°C
100
IC2
Continuous Collector Current @ TC = 60°C
100
Amps
1
ICM
ILM
Pulsed Collector Current
@ TC = 25°C
280
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
200
2
EAS
PD
Single Pulse Avalanche Energy
mJ
85
TotalPowerDissipation
Watts
500
TJ,TSTG OperatingandStorageJunctionTemperatureRange
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
TL
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.0mA)
BVCES
600
4.5
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
5.5
2.2
2.8
6.5
2.7
Volts
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
3.4
1.0
ICES
IGES
mA
nA
5.0
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
APT100GF60JR
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
Capacitance
VGE = 0V
Cies
Coes
Cres
Qg
Input Capacitance
4400
480
300
335
40
Output Capacitance
Reverse Transfer Capacitance
pF
VCE = 25V
f = 1 MHz
3
Gate Charge
Total Gate Charge
V
GE = 15V
Qge
Qgc
td(on)
tr
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
VCC = 0.5VCES
IC = IC2
195
50
Resistive Switching (25°C)
VGE = 15V
200
190
270
50
VCC = 0.66VCES
IC = IC2
td(off)
tf
Turn-off Delay Time
Fall Time
RG = 10W
td(on)
Turn-on Delay Time
Rise Time
tr
td(off)
tf
170
400
95
Inductive Switching (150°C)
ns
V
CLAMP(Peak) = 0.66VCES
Turn-off Delay Time
Fall Time
VGE = 15V
IC = IC2
Eon
Eoff
Ets
RG = 10W
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
6.3
5.2
11.5
55
TJ = +150°C
mJ
ns
td(on)
tr
Inductive Switching (25°C)
V
CLAMP(Peak) = 0.66VCES
VGE = 15V
180
365
90
td(off)
tf
Turn-off Delay Time
Fall Time
IC = IC2
RG = 10W
TJ = +25°C
Ets
Total Switching Losses
Forward Transconductance
mJ
S
10.5
gfe
6
VCE = 20V, IC = IC2
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
UNIT
MIN
TYP
MAX
0.32
40
Junction to Case
RQJC
RQJA
°C/W
Junction to Ambient
1.03
29.2
oz
WT
Package Weight
gm
10
lb•in
N•m
Torque
Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
1.5
1
2
3
Repetitive Rating: Pulse width limited by maximum junction temperature.
IC = IC2, RGE = 25W, L = 17µH, Tj = 25°C
SeeMIL-STD-750Method3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT100GF60JR
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Emitter
Collector
30.1 (1.185)
30.3 (1.193)
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Emitter
Gate
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095
5,262,336
5,528,058
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