APT100GF60JU2 [MICROSEMI]
Boost chopper NPT IGBT; 升压斩波NPT IGBT
| 型号： | APT100GF60JU2 |
| 厂家： | 
Microsemi |
| 描述： | Boost chopper NPT IGBT |
| 文件： | 总9页 (文件大小：431K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT100GF60JU2
ISOTOP® Boost chopper
NPT IGBT
VCES = 600V
IC = 100A @ Tc = 80°C
Application
•
•
•
•
AC and DC motor control
K
Switched Mode Power Supplies
Power Factor Correction
Brake switch
C
Features
•
Non Punch Through (NPT) THUNDERBOLT IGBT®
-
-
-
-
-
-
-
-
Low voltage drop
G
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
E
•
•
•
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
K
E
Benefits
•
•
•
•
•
•
•
Outstanding performance at high frequency operation
Stable temperature behavior
C
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
ISOTOP
Absolute maximum ratings
Symbol
Parameter
Max ratings
600
Unit
VCES
IC1
IC2
Collector - Emitter Breakdown Voltage
V
TC = 25°C
TC = 80°C
TC = 25°C
120
Continuous Collector Current
A
100
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
320
±20
V
W
Maximum Power Dissipation
TC = 25°C
416
IFAV
IFRMS
Maximum Average Forward Current
RMS Forward Current (Square wave, 50% duty)
Duty cycle=0.5 TC = 80°C
30
39
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APT100GF60JU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 100µA
600
V
Tj = 25°C
100
1000
2.5
VGE = 0V
ICES
Zero Gate Voltage Collector Current
µA
VCE = 600V
Tj = 125°C
Tj = 25°C
Tj = 125°C
2.0
2.2
VGE =15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
V
V
IC = 100A
VGE = VCE, IC = 1mA
VGE = ±20V, VCE = 0V
3
5
IGES
Gate – Emitter Leakage Current
±150 nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Qg
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
4300
pF
Output Capacitance
470
400
330
290
200
26
Reverse Transfer Capacitance
Total gate Charge
VGS = 15V
VBus = 300V
IC = 100A
nC
Qge
Qgc
Gate – Emitter Charge
Gate – Collector Charge
Resistive Switching (25°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
25
150
30
ns
VBus = 400V
IC = 100A
Tf
Fall Time
RG = 5Ω
Eon
Eoff
Turn-on Switching Energy
Turn off Switching Energy
3.35
2.85
26
25
170
40
mJ
ns
Inductive Switching (125°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf
Eon
Eoff
VBus = 400V
IC = 100A
RG = 5Ω
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
4.3
3.5
mJ
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APT100GF60JU2
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF = 30A
1.6
1.9
1.4
1.8
VF
Diode Forward Voltage
V
IF = 60A
IF = 30A
Tj = 125°C
Tj = 25°C
Tj = 125°C
VR = 600V
VR = 600V
VR = 200V
IF=1A,VR=30V
di/dt =100A/µs
250
500
IRM
CT
Maximum Reverse Leakage Current
Junction Capacitance
µA
pF
44
23
Reverse Recovery Time
Tj = 25°C
trr
ns
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
85
160
4
Reverse Recovery Time
IF = 30A
IRRM
Qrr
Maximum Reverse Recovery Current
A
VR = 400V
di/dt =200A/µs
8
130
700
Reverse Recovery Charge
nC
Tj = 125°C
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
70
1300
30
ns
nC
A
IF = 30A
VR = 400V
di/dt =1000A/µs
Tj = 125°C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.3
RthJC
Junction to Case Thermal Resistance
Junction to Ambient (IGBT & Diode)
°C/W
1.21
20
RthJA
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
VISOL
2500
-55
V
TJ,TSTG Storage Temperature Range
150
300
1.5
°C
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
N.m
g
Wt
Package Weight
29.2
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APT100GF60JU2
Typical IGBT Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
300
250
200
150
100
50
350
250µs Pulse Test
< 0.5% Duty cycle
Tc=-55°C
250µs Pulse Test
Tc=-55°C
300
250
200
150
100
50
< 0.5% Duty cycle
Tc=25°C
Tc=25°C
Tc=125°C
Tc=125°C
0
0
0
1
2
3
4
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
Gate Charge
300
250
200
150
100
50
18
16
14
12
10
8
6
4
2
0
250µs Pulse Test
< 0.5% Duty cycle
IC = 100A
VCE=120V
TJ = 25°C
VCE=300V
VCE=480V
TJ=25°C
TJ=125°C
TJ=-55°C
0
0
1
2
3
4
5
6
7
8
9
10
0
50 100 150 200 250 300 350
VGE, Gate to Emitter Voltage (V)
Gate Charge (nC)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
4
3.5
3
8
7
6
5
4
3
2
1
0
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=200A
Ic=100A
Ic=200A
2.5
2
1.5
1
Ic=100A
Ic=50A
Ic=50A
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.5
0
-50 -25
6
8
10
12
14
16
0
25
50
75 100 125
VGE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
160
140
120
100
80
1.20
1.10
1.00
0.90
0.80
0.70
60
40
20
0
-50 -25
0
25 50 75 100 125
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
TC, Case Temperature (°C)
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APT100GF60JU2
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
35
30
25
20
15
250
200
150
100
50
VGE=15V,
TJ=125°C
VGE = 15V
VGE=15V,
TJ=25°C
Tj = 25°C
VCE = 400V
VCE = 400V
R
G = 5Ω
R
G = 5Ω
25
50
75
100
125
150
25
50
75
100
125
150
I
CE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
80
60
40
20
0
80
60
40
20
0
VCE = 400V
VCE = 400V, VGE = 15V, RG = 5Ω
R
G = 5Ω
TJ = 125°C
TJ = 25°C
VGE=15V,
TJ=125°C
25
50
75
100
125
150
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
6
5
4
3
2
1
0
8
6
4
2
0
VCE = 400V
TJ = 125°C
VCE = 400V
V
R
GE = 15V
G = 5Ω
RG = 5Ω
TJ=125°C,
GE=15V
TJ = 25°C
TJ=25°C,
V
V
GE=15V
0
25
50
75
100
125
150
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
Switching Energy Losses vs Gate Resistance
16
12
8
10
8
VCE = 400V
VGE = 15V
TJ= 125°C
VCE = 400V
Eon, 200A
Eoff, 200A
V
GE = 15V
Eon, 200A
Eoff, 200A
RG = 5Ω
Eoff, 100A
Eon, 100A
6
Eon, 100A
4
Eoff, 50A
4
Eoff, 100A
Eon, 50A
2
Eon, 50A
40
Eoff, 50A
25
0
0
0
10
20
30
50
0
50
75
100
125
Gate Resistance (Ohms)
TJ, Junction Temperature (°C)
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APT100GF60JU2
Capacitance vs Collector to Emitter Voltage
10000
Minimum Switching Safe Operating Area
350
300
250
200
150
100
50
Cies
1000
100
Coes
Cres
0
0
10
20
30
40
50
0
200
400
600
800
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
0.7
0.25
0.2
0.5
0.3
0.15
0.1
0.05
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Operating Frequency vs Collector Current
120
100
80
60
40
20
0
VCE = 400V
D = 50%
RG = 5Ω
TJ = 125°C
20
40
60
80
100
120
IC, Collector Current (A)
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APT100GF60JU2
Typical Diode Performance Curve
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APT100GF60JU2
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APT100GF60JU2
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
r = 4.0 (.157)
(2 places)
25.4 (1.000)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
Collector
Cathode
30.1 (1.185)
*
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
Emitter
Dimensions in Millimeters and (Inches)
Gate
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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