APT100GF60JRD [ADPOW]
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.; 快速IGBT⑩是新一代高压功率IGBT的。
| 型号： | APT100GF60JRD |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| 文件： | 总5页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT100GF60JRD
600V 140A
E
E
Fast IGBT& FRED
The Fast IGBT™ is a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBT™ combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
C
G
SOT-227
ISOTOP®
• Low Forward Voltage Drop
• Low Tail Current
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
C
• RBSOA and SCSOA Rated
G
• Ultrafast Soft Recovery Antiparallel Diode
E
MAXIMUM RATINGS (IGBT)
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT100GF60JRD
UNIT
600
600
±20
Collector-Emitter Voltage
VCES
VCGR
VGE
IC1
Collector-Gate Voltage (RGE = 20KΩ)
Gate-Emitter Voltage
Volts
Y
140
100
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 90°C
IC2
Amps
1
280
Pulsed Collector Current
Pulsed Collector Current
Total Power Dissipation
@ TC = 25°C
@ TC = 90°C
ICM1
ICM2
PD
1
200
390
Watts
Operating and Storage Junction Temperature Range
-55 to 150
300
TJ,TSTG
TL
°C
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol Characteristic / Test Conditions
MIN
600
4.5
TYP
MAX
UNIT
BVCES
Collector-Emitter Breakdown Voltage (V = 0V, I = 0.8mA)
GE C
PRELIMINAR
5.5
2.5
3.3
6.5
2.7
VGE(TH)
Gate Threshold Voltage (VCE = VGE, IC = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Volts
VCE(ON)
3.9
2
0.8
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
ICES
IGES
mA
nA
2
TBD
±100
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS (IGBT)
APT100GF60JRD
Symbol
Test Conditions
MIN
TYP
MAX
5900
1250
435
UNIT
Characteristic
Capacitance
VGE = 0V
Cies
Coes
Cres
Qg
Input Capacitance
4400
890
290
335
40
Output Capacitance
Reverse Transfer Capacitance
pF
VCE = 25V
f = 1 MHz
3
Gate Charge
Total Gate Charge
VGE = 15V
Qge
Qgc
td(on)
tr
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
VCC = 0.5VCES
IC = IC2
195
30
Resistive Switching (25°C)
VGE = 15V
Y
105
145
135
40
VCC = 0.8VCES
IC = IC2
td(off)
tf
Turn-off Delay Time
Fall Time
RG = 5Ω
td(on)
Turn-on Delay Time
Rise Time
tr
td(off)
tf
200
250
140
7.0
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
ns
Turn-off Delay Time
Fall Time
VGE = 15V
IC = IC2
4
RG = 5Ω
Eon
Eoff
Ets
Turn-on Switching Energy
TJ = +150°C
Turn-off Switching Energy
5.6
mJ
ns
4
Total Switching Losses
13.6
40
Turn-on Delay Time
td(on)
tr
Inductive Switching (25°C)
V
(Peak) = 0.66V
PRELIMINAR
CLAMP
CES
Rise Time
200
210
115
11.0
VGE = 15V
IC = IC2
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 5Ω
TJ = +25°C
4
Ets
mJ
S
Total Switching Losses
Forward Transconductance
gfe
VCE = 20V, IC = IC2
6
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol Characteristic
UNIT
MIN
TYP
MAX
0.32
0.42
40
Junction to Case (IGBT)
RΘJC
Junction to Case (FRED)
°C/W
Junction to Ambient
Package Weight
RΘJA
WT
1.03
29.2
oz
gm
10
lb•in
N•m
Torque
Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)
1.1
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
Leakages include the FRED and IGBT.
See MIL-STD-750 Method 3471
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT100GF60JRD
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
MAXIMUM RATINGS (FRED)
All Ratings: T = 25°C unless otherwise specified.
C
Symbol Characteristic / Test Conditions
APT100GF60JRD
UNIT
VR
VRRM
VRWM
IF(AV)
IF(RMS)
IFSM
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (TC = 60°C, Duty Cycle = 0.5)
RMS Forward Current
600
Volts
100
170
Amps
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
1000
Y
STATIC ELECTRICAL CHARACTERISTICS (FRED)
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IF = 100A
2.0
VF
Maximum Forward Voltage
IF = 200A
1.7
Volts
IF = 100A, TJ = 150°C
1.7
DYNAMIC CHARACTERISTICS (FRED)
PRELIMINAR
Symbol Characteristic
trr1
trr2
MIN
TYP
60
MAX
UNIT
Reverse Recovery Time, IF = 1.0A, diF/dt = -15A/µs, VR = 30V, TJ = 25°C
75
Reverse Recovery Time
TJ = 25°C
TJ = 100°C
TJ = 25°C
TJ = 100°C
TJ = 25°C
TJ = 100°C
TJ = 25°C
TJ = 100°C
TJ = 25°C
TJ = 100°C
TJ = 25°C
TJ = 100°C
60
trr3
IF = 100A, diF/dt = -800A/µs, VR = 350V
Forward Recovery Time
92
ns
tfr1
185
185
27
tfr2
IF = 100A, diF/dt = 800A/µs, VR = 350V
Reverse Recovery Current
IRRM1
IRRM2
Qrr1
Qrr2
Vfr1
Vfr2
38
54
Amps
nC
42
IF = 100A, diF/dt = -800A/µs, VR = 350V
Recovery Charge
810
1930
10.2
10.2
600
400
IF = 100A, diF/dt = -800A/µs, VR = 350V
Forward Recovery Voltage
Volts
A/µs
IF = 100A, diF/dt = 800A/µs, VR = 350V
Rate of Fall of Recovery Current
IF = 100A, diF/dt = -800A/µs, VR = 350V (See Figure 10)
diM/dt
APT100GF60JRD
300
240
180
120
60
4000
3000
2000
1000
0
T
= 100°C
J
V
= 350V
R
200A
100A
T
= 150°C
= 100°C
J
T
J
T
= 25°C
J
T
= -55°C
J
50A
0
0
F
1
2
3
4
10
F
50
100
500 1000
V , ANODE-TO-CATHODE VOLTAGE (VOLTS)
di /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 1, Forward Voltage Drop vs Forward Current
Figure 2, Reverse Recovery Charge vs Current Slew Rate
1.6
60
T
= 100°C
J
V
= 350V
R
200A
50
40
30
20
10
0
Y
Q
rr
1.2
t
100A
rr
t
50A
rr
I
0.8
0.4
0.0
RRM
Q
rr
0
F
200
400
600
800
1000
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
di /dt, CURRENT SLEW RATE (AMPERES/µSEC)
J
Figure 3, Reverse Recovery Current vs Current Slew Rate
Figure 4, Dynamic Parameters vs Junction Temperature
400
3000
2500
2000
15
T
= 100°C
T
= 100°C
J
J
V
I
= 350V
V
= 350V
R
R
= 100A
F
12.5
10
7.5
5
300
200
100
0
200A
V
fr
100A
50A
PRELIMINAR
1500
1000
500
0
2.5
t
fr
0
0
F
200
400
600
800
1000
0
F
200
400
600
800
1000
di /dt, CURRENT SLEW RATE (AMPERES/µSEC)
di /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
0.5
D=0.5
0.2
0.1
0.1
0.05
0.05
Note:
0.02
0.01
0.01
t
1
SINGLE PULSE
0.005
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM
θJC
C
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
V , REVERSE VOLTAGE (VOLTS)
RECTANGULAR PULSE DURATION (SECONDS)
R
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
APT100GF60JRD
V
r
D.U.T.
t
Q
/
30µH
rr rr
Waveform
PEARSON 411
CURRENT
TRANSFORMER
+15v
0v
diF/dt Adjust
Y
-15v
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
1
IF - Forward Conduction Current
1
4
6
2
diF/dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
Zero
3
4
IRRM - Peak Reverse Recovery Current.
5
t
- Reverse Recovery Time Measured from Point of IF
3
rr
0.5 I
RRM
6
Current Falling Through Zero to a Tangent Line {
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM
diM/dt}
0.75 I
RRM
.
2
5
6
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
1
Q
t . IRRM
= / ( rr
2
)
rr
PRELIMINAR
diM/dt - Maximum Rate of Current Change During the Trailing Portion of t
rr.
Figure 8, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Emitter
Collector
30.1 (1.185)
30.3 (1.193)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Emitter
Gate
Dimensions in Millimeters and (Inches)
相关型号：
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