APT10090SLL [ADPOW]
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。
| 型号： | APT10090SLL |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| 文件： | 总2页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT10090BLL
APT10090SLL
1000V 12A 0.900W
TM
BLL
POWER MOS 7
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
D3PAK
TO-247
SLL
D
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• IncreasedPowerDissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT10090
1000
12
UNIT
VDSS
ID
Drain-SourceVoltage
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
48
VGS
VGSM
Gate-SourceVoltageContinuous
±30
Gate-SourceVoltageTransient
±40
Total Power Dissipation @ TC = 25°C
LinearDeratingFactor
Watts
W/°C
300
PD
2.4
TJ,TSTG
TL
OperatingandStorageJunctionTemperatureRange
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
Amps
mJ
1
IAR
Avalanche Current (Repetitive and Non-Repetitive)
12
1
EAR
EAS
30
Repetitive Avalanche Energy
4
1210
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
1000
12
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.90
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Chemin de Magret
Bend,Oregon97702-1035
F-33700Merignac-France
Phone:(541)382-8028
Phone:(33) 5 57 92 15 15
FAX:(541)388-0364
FAX:(33) 5 56 47 97 61
EUROPE
DYNAMIC CHARACTERISTICS
APT10090 BLL - SLL
MIN
TYP
MAX
UNIT
Symbol
Ciss
Coss
Crss
Qg
Characteristic
TestConditions
InputCapacitance
2040
338
67
78
12
52
10
5
VGS = 0V
VDS = 25V
f = 1 MHz
OutputCapacitance
Reverse Transfer Capacitance
pF
3
V
GS = 10V
Total Gate Charge
VDD = 0.5 VDSS
Qgs
Qgd
td(on)
tr
nC
ns
Gate-SourceCharge
Gate-Drain("Miller")Charge
Turn-onDelayTime
Rise Time
ID = ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 1.6W
td(off)
tf
Turn-offDelayTime
FallTime
26
8
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
MIN
TYP
MAX
12
Characteristic / Test Conditions
UNIT
Continuous Source Current (Body Diode)
Amps
1
ISM
48
Pulsed Source Current
(Body Diode)
2
VSD
t rr
Diode Forward Voltage (VGS = 0V, IS = -ID[Cont.])
1.3
Volts
ns
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
700
9.0
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
µC
dv
/
5
Peak Diode Recovery dv
/
V/ns
10
dt
dt
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.42
40
UNIT
RqJC
RqJA
Junction to Case
°C/W
JunctiontoAmbient
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction
temperature.
SeeMIL-STD-750Method3471
Starting T = +25°C, L = 16.8mH, R = 25W, Peak I = 12A
j
G
L
dv
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
£ -I
/
£ 700A/µs
VR £ V
T £ 150°C
J
dt
S
D Cont.
[
DSS
]
APT Reserves the right to change, without notice, the specifications and information contained herein.
D3PAK Package Outline
TO-247 Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
5.31 (.209)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15 (.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
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