首页 |元器件品牌

APT100DL60SG [MICROSEMI]

Ultrasoft Recovery Rectifi er Diode; 超软恢复Rectifi器二极管
APT100DL60SG
型号： APT100DL60SG
厂家： Microsemi    Microsemi
描述：

Ultrasoft Recovery Rectifi er Diode
超软恢复Rectifi器二极管

整流二极管 超软恢复二极管
文件： 总4页 (文件大小：131K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
APT100DL60B(G)  
APT100DL60S(G)  
600V 100A  
*G Denotes RoHS Compliant, Pb Free Terminal Finish.  
Ultrasoft Recovery Rectifier Diode  
(B)  
PRODUCT APPLICATIONS  
PRODUCT BENEFITS  
• Soft Switching - High Q  
rr  
PRODUCT FEATURES  
• Ultrasoft Recovery Times (t  
D3PAK  
)
• Anti-Parallel Diode  
-Switchmode Power Supply  
rr  
• Low Noise Switching  
- Reduced Ringing  
• Popular TO-247 Package or  
-Inverters  
1
Surface Mount D3PAK Package  
• Ultra Low Forward Voltage  
• Low Leakage Current  
(S)  
2
2
1
• Applications  
• Higher Reliability Systems  
- Induction Heating  
• Minimizes or eliminates  
snubber  
• Resonant Mode Circuits  
-ZVS and ZCS Topologies  
- Phase Shifted Bridge  
2
1
1 - Cathode  
2 - Anode  
Back of Case -Cathode  
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
Symbol Characteristic / Test Conditions  
Ratings  
Unit  
Maximum D.C. Reverse Voltage  
VR  
VRRM  
VRWM  
IF(AV)  
Maximum Peak Repetitive Reverse Voltage  
600  
Volts  
Maximum Working Peak Reverse Voltage  
1
100  
131  
Maximum Average Forward current  
(TC = 124°C, Duty Cycle = 0.5)  
IF(RMS)  
IFSM  
RMS Forward Currrent (Square wave, 50% duty)  
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)  
Operating and Storage Junction Temperature Range  
Lead Temperature for 10 Seconds  
Amps  
°C  
600  
TJ, TSTG  
TL  
-55 to 175  
300  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
Min  
Typ  
Max  
Unit  
IF = 100A  
1.25  
2.0  
1.6  
VF  
Forward Voltage  
IF = 200A  
Volts  
IF = 100A, TJ = 25°C  
VR = 600V  
1.28  
25  
IRM  
CT  
Maximum Reverse Leakage Current  
Junction Capacitance, VR = 200V  
μA  
VR = 600V, TJ = 125°C  
250  
97  
pF  
Microsemi Website - http://www.microsemi.com  
DYNAMIC CHARACTERISTICS  
APT100DL60B_S(G)  
Symbol Characteristic / Test Conditions  
Min  
Typ  
Max  
Unit  
trr  
trr  
Reverse Recovery Time  
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C  
110  
487  
2328  
11  
ns  
Reverse Recovery Time  
IF = 100A, diF/dt = -200A/  
μs VR = 400V, TC = 25°C  
Qrr  
IRRM  
trr  
Reverse Recovery Charge  
Maximum Reverse Recovery Current  
Reverse Recovery Time  
nC  
Amps  
ns  
716  
5954  
18  
IF = 100A, diF/dt = -200A/μs  
VR = 400V, TC = 125°C  
Qrr  
IRRM  
trr  
Reverse Recovery Charge  
Maximum Reverse Recovery Current  
Reverse Recovery Time  
nC  
Amps  
ns  
333  
10002  
49  
IF = 100A, diF/dt = -1000A/  
μs VR = 400V, TC = 125°C  
Qrr  
IRRM  
Reverse Recovery Charge  
Maximum Reverse Recovery Current  
nC  
Amps  
THERMAL AND MECHANICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
Min  
Typ  
Max  
Unit  
Junction-to-Case Thermal Resistance  
0.34  
°C/W  
oz  
RθJC  
WT  
0.22  
5.9  
Package Weight  
g
10  
lb·in  
N·m  
Torque  
Maximum Mounting Torque  
1.1  
1
Continuous current limited by package lead temperature.  
Microsemi reserves the right to change, without notice, the specifications and information contained herein.  
0.40  
0.35  
0.30  
0.25  
0.20  
Note:  
0.15  
t
1
0.10  
0.05  
0
t
2
t
1
t
/
2
Duty Factor D =  
Peak T = P x Z  
+ T  
C
J
DM  
θJC  
10-5  
10-4  
10-3  
RECTANGULAR PULSE DURATION (seconds)  
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION  
10-2  
10-1  
1.0  
TYPICAL PERFORMANCE CURVES  
APT100DL60B_S(G)  
250  
1000  
800  
600  
400  
200  
T
= 125°C  
= 400V  
J
225  
V
R
TJ= 125°C  
200  
TJ= 55°C  
100A  
50A  
175  
TJ= 25°C  
TJ= 150°C  
150  
125  
100  
75  
200A  
50  
25  
0
0
0
0.5  
1
1.5  
2
2.5  
0
200  
400  
600  
800  
1000  
-diF/dt, CURRENT RATE OF CHANGE (A/ꢀs)  
V , ANODE-TO-CATHODE VOLTAGE (V)  
F
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change  
FIGURE 2, Forward Current vs. Forward Voltage  
14000  
12000  
10000  
8000  
6000  
4000  
2000  
0
70  
T
= 125°C  
= 400V  
T
= 125°C  
= 400V  
200A  
J
J
V
V
200A  
R
R
60  
50  
40  
30  
20  
10  
100A  
50A  
100A  
50A  
0
0
200  
400  
600  
800  
1000  
0
200  
400  
600  
800  
1000  
-diF/dt, CURRENT RATE OF CHANGE (A/ꢀs)  
-diF/dt, CURRENT RATE OF CHANGE (A/ꢀs)  
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change  
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change  
1. 2  
400  
350  
300  
250  
200  
150  
100  
50  
1.0  
tRR  
0.5  
IRRM  
0.4  
QRR  
0.3  
0.2  
0
0
0
25  
50  
75  
100  
125  
150  
25  
50  
75  
Case Temperature (°C)  
FIGURE 7, Maximum Average Forward Current vs. Case Temperature  
100  
125  
150  
T , JUNCTION TEMPERATURE (°C)  
J
FIGURE 6, Dynamic Parameters vs Junction Temperature  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
1
10  
100  
400  
V , REVERSE VOLTAGE (V)  
R
FIGURE 8, Junction Capacitance vs. Reverse Voltage  
APT100DL60B_S(G)  
V
r
diF/dt Adjust  
+18V  
0V  
D.U.T.  
t
Q
/
rr rr  
Waveform  
CURRENT  
TRANSFORMER  
Figure 9. Diode Test Circuit  
1
2
IF - Forward Conduction Current  
1
4
5
6
diF/dt - Rate of Diode Current Change Through Zero Crossing.  
Zero  
3
4
IRRM - Maximum Reverse Recovery Current.  
0.25 I  
RRM  
t
- Reverse Recovery Time, measured from zero crossing where diode  
current goes from positive to negative, to the point at which the straight  
line through IRRM and 0.25 IRRM passes through zero.  
3
rr  
Slope = diM/  
dt  
2
5
6
Q
- Area Under the Curve Defined by IRRM and t .  
rr  
rr  
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of t  
rr.  
Figure 10, Diode Reverse Recovery Waveform and Definitions  
TO-247 Package Outline  
e1 SAC: Tin, Silver, Copper  
4.69 (.185)  
D3PAK Package Outline  
e1 100% Sn  
5.31 (.209)  
15.49 (.610)  
4.90 (.193)  
5.10 (.201)  
1.45 (.057)  
1.60 (.063)  
15.85 (.624)  
13.30 (.524)  
13.60(.535)  
16.26 (.640)  
1.49 (.059)  
2.49 (.098)  
16.05(.632)  
1.00 (.039)  
1.15(.045)  
5.38 (.212)  
6.20 (.244)  
6.15 (.242) BSC  
20.80 (.819)  
21.46 (.845)  
12.40 (.488)  
12.70 (.500)  
18.70 (.736)  
19.10 (.752)  
3.50 (.138)  
3.81 (.150)  
0.40 (.016)  
0.65 (.026)  
4.50 (.177) Max.  
1.20 (.047)  
1.40 (.055)  
0.020 (.001)  
0.250 (.010)  
1.90 (.075)  
2.10 (.083)  
2.40 (.094)  
1.65 (.065)  
2.13 (.084)  
0.40 (.016)  
0.79 (.031)  
2.70 (.106)  
1.15 (.045)  
1.45 (.057)  
19.81 (.780)  
20.32 (.800)  
2.70 (.106)  
2.90 (.114)  
(Base of Lead)  
1.01 (.040)  
1.40 (.055)  
5.45 (.215) BSC  
(2 Plcs.)  
Heat Sink (Cathode)  
and Leads  
are Plated  
Anode  
Cathode  
2.21 (.087)  
2.59 (.102)  
Anode  
Cathode  
Dimensions in Millimeters (Inches)  
10.90 (.430) BSC  
Dimensions in Millimeters and (Inches)  
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583  
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262  
and foreign patents. US and Foreign patents pending. All Rights Reserved.  

相关型号：

APT100F50J

 N-Channel FREDFET
MICROSEMI

APT100GF60B2R

 The Fast IGBT is a new generation of high voltage power IGBTs.
ADPOW

APT100GF60JR

 The Fast IGBT is a new generation of high voltage power IGBTs.
ADPOW

APT100GF60JRD

 The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
ADPOW

APT100GF60JU2

 Boost chopper NPT IGBT
MICROSEMI

APT100GF60JU3

 ISOTOP Buck chopper NPT IGBT
MICROSEMI

APT100GF60JU3

 ISOTOP Buck chopper NPT IGBT
ADPOW

APT100GF60LR

 The Fast IGBT is a new generation of high voltage power IGBTs.
ADPOW

APT100GN120B2

 Thunderbolt IGBT
MICROSEMI

APT100GN120B2G

 Thunderbolt IGBT
MICROSEMI

APT100GN120J

 IGBT
ADPOW

APT100GN120J

 Power Semiconductors Power Modules
MICROSEMI
©2020 ICPDF网 联系我们和版权申明