APT100GF60B2R [ADPOW]
The Fast IGBT is a new generation of high voltage power IGBTs.; 快速IGBT是新一代高压功率IGBT的。
| 型号： | APT100GF60B2R |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | The Fast IGBT is a new generation of high voltage power IGBTs. |
| 文件： | 总3页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT100GF60B2R
APT100GF60LR
600V 100A
APT100GF60B2R
Fast IGBT
T-Max™
TO-264
(B2R)
(LR)
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
G
C
G
• Low Forward Voltage Drop
• Low Tail Current
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
E
C
APT100GF60LR
C
E
E
• Avalanche Rated
G
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT100GF60B2R/LR
UNIT
600
600
Collector-Emitter Voltage
VCES
VCGR
VEC
VGE
IC1
Collector-Gate Voltage (RGE = 20KΩ)
Emitter-Collector Voltage
Volts
15
Y
Gate-Emitter Voltage
±20
100
5
Continuous Collector Current
@ TC = 25°C
IC2
Continuous Collector Current @ TC = 90°C
100
Amps
1
280
ICM1
ICM2
EAS
PD
Pulsed Collector Current
Pulsed Collector Current
@ TC = 25°C
1
200
@ TC = 90°C
2
85
Single Pulse Avalanche Energy
Total Power Dissipation
mJ
390
Watts
TJ,TSTG Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
TL
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
600
-15
4.5
TYP
MAX
UNIT
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.0mA)
PRELIMINAR
RBVCES Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, IC = 50mA)
5.5
2.2
2.8
6.5
2.7
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 700µA, Tj = 25°C)
Volts
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
VCE(ON)
3.4
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
ICES
1.0
mA
nA
TBD
±100
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
IGES
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS (IGBT)
APT100GF60B2R/LR
Symbol
Test Conditions
MIN
TYP
MAX
6000
675
UNIT
Characteristic
Capacitance
VGE = 0V
Cies
Coes
Cres
Qg
Input Capacitance
4400
480
300
126
20
Output Capacitance
Reverse Transfer Capacitance
pF
VCE = 25V
f = 1 MHz
450
3
Gate Charge
Total Gate Charge
V
GE = 15V
Qge
Qgc
td(on)
tr
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
VCC = 0.5VCES
IC = IC2
75
Resistive Switching (25°C)
VGE = 15V
50
Y
200
190
270
50
VCC = 0.80VCES
IC = IC2
td(off)
tf
Turn-off Delay Time
Fall Time
RG = 10Ω
td(on)
Turn-on Delay Time
Rise Time
tr
td(off)
tf
170
400
95
Inductive Switching (150°C)
ns
V
CLAMP(Peak) = 0.66VCES
Turn-off Delay Time
VGE = 15V
Fall Time
IC = IC2
Turn-on Switching Energy
Turn-off Switching Energy
RG = 10Ω
Eon
Eoff
Ets
6.3
TJ = +150°C
mJ
ns
5.2
Total Switching Losses
Turn-on Delay Time
11.5
5.5
td(on)
tr
Inductive Switching (25°C)
(Peak) = 0.66V
V
Rise Time
PRELIMINAR
VGE = 15V
IC = IC2
CLAMP
CES
180
360
90
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 10Ω
4
TJ = +25°C
Total Switching Losses
mJ
S
Ets
10.5
Forward Transconductance
gfe
V
CE = 20V, IC = IC2
6
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol Characteristic
UNIT
MIN
TYP
MAX
0.42
0.90
40
Junction to Case (IGBT)
RΘJC
Junction to Case (FRED)
°C/W
Junction to Ambient
Package Weight
RΘJA
WT
0.22
6.1
oz
gm
10
lb•in
N•m
Torque
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
1.1
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction temperature.
The maximum current is limited by lead temperature.
IC = IC2, VCC = 50V, RGE = 25Ω, L = 17µH, Tj = 25°C
See MIL-STD-750 Method 3471
The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT100GF60B2R/LR
Y
PRELIMINAR
T-MAX™ Package Outline
TO-264 Package Outline
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
4.50
(.177) Max.
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
0.40 (.016)
0.79 (.031)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
Gate
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Collector
Emitter
Collector
Emitter
1.01 (.040)
1.40 (.055)
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.21 (.087)
2.59 (.102)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.00 (.118)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
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