APT10090BLL_03 [ADPOW]

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。


型号：	APT10090BLL_03
厂家：	ADVANCED POWER TECHNOLOGY
描述：	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。
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APT10090BLL

APT10090SLL

1000V 12A 0.900Ω

BLL

POWER MOS 7 MOSFET

D³PAK

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

TO-247

SLL

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• IncreasedPowerDissipation

• Easier To Drive

• TO-247 or Surface Mount D³PAK Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT10090

1000

UNIT

V_DSS

I_D

Drain-SourceVoltage

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-SourceVoltageContinuous

±30

Gate-SourceVoltageTransient

±40

Total Power Dissipation @ T_C= 25°C

LinearDeratingFactor

298

Watts

W/°C

P_D

2.4

T_J,T_STG

T_L

OperatingandStorageJunctionTemperatureRange

Lead Temperature: 0.063" from Case for 10 Sec.

-55 to 150

300

°C

Amps

I_AR

Avalanche Current (Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

1210

Single Pulse Avalanche Energy

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

1000

TYP

MAX

UNIT

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 6A)

Ohms

µA

0.90

100

500

±100

Zero Gate Voltage Drain Current (V_DS= 1000V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 800V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_DSS

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

DYNAMIC CHARACTERISTICS

Symbol Characteristic

APT10090BLL-SLL

TestConditions

MIN

TYP

MAX

UNIT

C_iss

C_oss

C_rss

Q_g

Input Capacitance

1969

332

= 0V

Output Capacitance

= 25V

f = 1 MHz

Reverse Transfer Capacitance

Total Gate Charge

= 10V

= 500V

Q_gs

Q_gd

t_d(on)

t_r

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

= 12A @ 25°C

RESISTIVESWITCHING

= 15V

= 500V

= 12A @ 25°C

t_d(off)

Turn-off Delay Time

Fall Time

= 1.6Ω

t_f

INDUCTIVESWITCHING@25°C

E_on

E_off

E_on

E_off

Turn-on Switching Energy

334

= 670V, V = 15V

= 12A, R = 5Ω

Turn-off Switching Energy

INDUCTIVESWITCHING@125°C

µJ

672

100

Turn-on Switching Energy

= 670V V = 15V

= 12A, R = 5Ω

Turn-off Switching Energy

SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS

Symbol

I_S

MIN

TYP

MAX

Characteristic / Test Conditions

UNIT

Continuous Source Current (Body Diode)

Amps

I_SM

Pulsed Source Current

(Body Diode)

V_SD

t _rr

1.3

Diode Forward Voltage (V_GS= 0V, I_S= -I_D12A)

Volts

700

9.0

Reverse Recovery Time (I_S= -I_D12A, dl_S/dt = 100A/µs)

Reverse Recovery Charge (I_S= -I_D12A, dl_S/dt = 100A/µs)

Q _rr

µC

V/ns

Peak Diode Recovery

THERMALCHARACTERISTICS

Symbol Characteristic

MIN

TYP

MAX

0.42

UNIT

R_θJC

R_θJA

Junction to Case

°C/W

Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

4 Starting T = +25°C, L = 16.81mH, R = 25Ω, Peak I = 12A

numbers reflect the limitations of the test circuit rather than the

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

device itself.

≤ -I 12A

≤ 700A/µs

V_R≤ V

T ≤ 150°C

DSS

6 Eon includes diode reverse recovery measured in accordance wtih

JEDEC standard JESD24-1. See figures 18, 20.

APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.

0.45

0.40

0.9

0.35

0.7

0.30

0.25

0.5

0.20

Note:

0.15

0.3

0.10

Duty Factor D =

0.1

Peak T = P

x Z + T

0.05

θJC C

0.05

SINGLEPULSE

10^-3

10^-5

10^-4

10^-2

10^-1

1.0

RECTANGULARPULSEDURATION(SECONDS)

FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

Typical Performance Curves

APT10090BLL-SLL

RC MODEL

Junction

temp. ( ”C)

=15,10V& 7.5V

6.5

0.164

0.00592F

0.125F

Power

(Watts)

0.257

Case temperature

5.5V

,DRAIN-TO-SOURCEVOLTAGE(VOLTS)

FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL

FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS

1.40

NORMALIZED TO

= -55°C

= 10V

= 6A

1.30

1.20

1.10

1.00

= +125°C

= +25°C

=10V

=20V

> I (ON) x

MAX.

DS(ON)

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

0.90

0.80

,GATE-TO-SOURCEVOLTAGE(VOLTS)

I ,DRAINCURRENT(AMPERES)

FIGURE4, TRANSFERCHARACTERISTICS

FIGURE5, R

vsDRAINCURRENT

DS(ON)

1.15

1.10

1.05

1.00

0.95

0.90

0.85

100

125

150

-50 -25

50 75 100 125 150

T ,CASETEMPERATURE(°C)

T ,JUNCTIONTEMPERATURE(°C)

FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE

FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE

2.5

1.2

= 6A

= 10V

1.1

1.0

0.9

0.8

2.0

1.5

1.0

0.5

0.0

0.7

0.6

-50 -25

25 50

75 100 125 150

-50 -25

75 100 125 150

T ,JUNCTIONTEMPERATURE(°C)

T ,CASETEMPERATURE(°C)

FIGURE8, R

vs. TEMPERATURE

FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE

DS(ON)

Typical Performance Curves

APT10090BLL-SLL

10,000

1,000

OPERATIONHERE

LIMITEDBYR (ON)

iss

100µS

oss

1mS

100

10mS

rss

=+25°C

T =+150°C

SINGLEPULSE

100

1000

,DRAIN-TO-SOURCEVOLTAGE(VOLTS)

FIGURE10,MAXIMUMSAFEOPERATINGAREA

FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE

200

= 12A

100

=200V

T =+150°C

=500V

T =+25°C

=800V

10 20 30 40 50 60 70 80 90 100

Q ,TOTALGATECHARGE(nC)

0.3

0.5

0.7

0.9

1.1

1.3

1.5

,SOURCE-TO-DRAINVOLTAGE(VOLTS)

FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE

FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE

d(off)

= 670V

= 5Ω

= 125°C

= 670V

L = 100µH

= 5Ω

= 125°C

L = 100µH

d(on)

(A)

FIGURE 14, DELAY TIMES vs CURRENT

FIGURE 15, RISE AND FALL TIMES vs CURRENT

1200

1000

800

1200

= 670V

= 5Ω

1000

800

600

400

= 125°C

L = 100µH

E_ONincludes

diode reverse recovery.

600

= 670V

= 12A

400

= 125°C

off

L = 100µH

200

off

200

E_ONincludes

diode reverse recovery.

10 15 20 25 30 35 40 45 50

R ,GATERESISTANCE(Ohms)

(A)

FIGURE16, SWITCHING ENERGYvs CURRENT

FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

Typical Performance Curves

APT10090BLL-SLL

Gate Voltage

90%

10 %

Gate Voltage

= 125 C

d(off)

d(on)

Drain Current

Drain Voltage

Drain Current

90%

5 %

10%

10 %

Drain Voltage

Switching Energy

Figure18,Turn-onSwitchingWaveformsandDefinitions

Figure19,Turn-offSwitchingWaveformsandDefinitions

APT15DF120B

V_CE

I_C

V_DD

D.U.T.

Figure 20, Inductive Switching Test Circuit

D³PAKPackageOutline

TO-247 Package Outline

4.98 (.196)

4.69 (.185)

15.95 (.628)

16.05 (.632)

13.41 (.528)

13.51 (.532)

5.31 (.209)

5.08 (.200)

15.49 (.610)

16.26 (.640)

1.04 (.041)

1.15 (.045)

1.49 (.059)

2.49 (.098)

1.47 (.058)

1.57 (.062)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

Revised

8/29/97

11.51 (.453)

11.61 (.457)

13.79 (.543)

13.99 (.551)

20.80 (.819)

21.46 (.845)

Revised

4/18/95

3.50 (.138)

3.81 (.150)

0.46 (.018)

0.56 (.022)

{3 Plcs}

1.27 (.050)

1.40 (.055)

0.020 (.001)

0.178 (.007)

2.87 (.113)

3.12 (.123)

3.81 (.150)

4.50 (.177) Max.

1.98 (.078)

2.08 (.082)

4.06 (.160)

2.67 (.105)

2.84 (.112)

(Base of Lead)

1.65 (.065)

2.13 (.084)

1.22 (.048)

1.32 (.052)

0.40 (.016)

0.79 (.031)

19.81 (.780)

20.32 (.800)

Heat Sink (Drain)

and Leads

are Plated

5.45 (.215) BSC

{2 Plcs.}

1.01 (.040)

1.40 (.055)

Gate

Drain

Source

Drain

Gate

Dimensions in Millimeters (Inches)

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

APT'sdevicesarecoveredbyoneormoreofthefollowingU.S.patents:

4,895,810

5,256,583

5,045,903

4,748,103

5,089,434

5,283,202

5,182,234

5,231,474

5,019,522

5,434,095

5,262,336

5,528,058

APT10090BLL_03 [ADPOW]

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