MMBT3904WT1 [LRC]
General Purpose Transistors(NPN and PNP Silicon); 通用晶体管（ NPN和PNP硅）
| 型号： | MMBT3904WT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | General Purpose Transistors(NPN and PNP Silicon) |
| 文件： | 总9页 (文件大小：447K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
GeneralPurposeTransistors
NPN and PNP Silicon
NPN
MMBT3904WT1
These transistors are designed for general purpose amplifier applications. They are housed
in the SOT–323/SC–70 which is designed for low power surface mount applications.
PNP
MMBT3906WT1
MAXIMUM RATINGS
Rating
Symbol
Value
40
Unit
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
Collector–Emitter Voltage
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
V CEO
Vdc
– 40
60
Collector–Base Voltage
Emitter–Base Voltage
V CBO
V EBO
I C
Vdc
Vdc
– 40
6.0
3
– 5.0
200
C
ollector Current — Continuous MMBT3904WT1
mAdc
1
MMBT3906WT1
– 200
2
CASE 419–02, STYLE 3
SOT– 323 / SC–70
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (1)
T A =25 °C
P D
150
mW
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
833
°C/W
°C
T J , T stg
–55 to +150
DEVICE MARKING
MMBT3904WT1 = AM; MMBT3906WT1 = 2A
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2)
(I C = 1.0 mAdc, I B = 0)
MMBT3904WT1
MMBT3906WT1
V (BR)CEO
40
—
—
Vdc
Vdc
(I C = –1.0 mAdc, I B = 0)
– 40
Collector–Base Breakdown Voltage
(I C = 10 µAdc, I E = 0)
MMBT3904WT1
MMBT3906WT1
V(BR)CBO
60
—
—
(I C = –10 µAdc, I E = 0)
– 40
Emitter–Base Breakdown Voltage
(IE= 10 µAdc, I C = 0)
MMBT3904WT1
MMBT3906WT1
V(BR)EBO
6.0
—
—
Vdc
(I E = –10 µAdc, I C = 0)
– 5.0
Base Cutoff Current
(V CE = 30 Vdc, V EB = 3.0 Vdc)
(V CE = –30 Vdc, V EB = –3.0 Vdc)
Collector Cutoff Current
MMBT3904WT1
MMBT3906WT1
I BL
—
—
50
nAdc
nAdc
-50
(V CE = 30 Vdc, V EB = 3.0 Vdc)
(V CE = –30 Vdc, V EB = –3.0 Vdc)
MMBT3904WT1
MMBT3906WT1
I CEX
—
—
50
– 50
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width 300 µs; Duty Cycle 2.0%.
<
<
K3–1/9
LESHAN RADIO COMPANY, LTD.
NPN MMBT3904WT1 PNP MMBT3906WT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS (2)
DC Current Gain
h FE
––
(I C = 0.1 mAdc, V CE = 1.0 Vdc)
(I C = 1.0 mAdc, V CE = 1.0 Vdc)
(I C = 10 mAdc, V CE = 1.0 Vdc)
(I C = 50 mAdc, V CE = 1.0 Vdc)
(I C = 100 mAdc, V CE = 1.0 Vdc)
(I C = –0.1 mAdc, V CE = –1.0 Vdc)
(I C = –1.0 mAdc, V CE = –1.0 Vdc)
(I C = –10 mAdc, V CE = –1.0 Vdc)
(I C = –50 mAdc, V CE = –1.0 Vdc)
(I C = –100 mAdc, V CE = –1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
(I C = 50 mAdc, I B = 5.0 mAdc)
(I C = –10 mAdc, I B = –1.0 mAdc)
(I C = –50 mAdc, I B = –5.0 mAdc)
Base–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
(I C = 50 mAdc, I B = 5.0 mAdc)
(I C = –10 mAdc, I B = –1.0 mAdc)
(I C = –50 mAdc, I B = –5.0 mAdc)
MMBT3904WT1
MMBT3906WT1
40
70
––
––
100
60
300
––
30
––
60
––
80
––
100
60
300
––
30
––
VCE(sat)
Vdc
Vdc
MMBT3904WT1
MMBT3906WT1
––
––
––
––
0.2
0.3
– 0.25
– 0.4
V BE(sat)
MMBT3904WT1
MMBT3906WT1
0.65
––
0.85
0.95
– 0.65
––
– 0.85
– 0.95
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f T
C obo
C ibo
h ie
MHz
(I C = 10 mAdc, V CE = 20 Vdc, f = 100 MHz)
(I C = –10 mAdc, V CE= –20 Vdc, f = 100 MHz)
Output Capacitance
MMBT3904WT1
MMBT3906WT1
300
250
––
––
pF
pF
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
(V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
MMBT3904WT1
MMBT3906WT1
––
––
4.0
4.5
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz)
Input Impedance
MMBT3904WT1
MMBT3906WT1
––
––
8.0
10.0
kΩ
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
MMBT3904WT1
MMBT3906WT1
1.0
2.0
10
12
h re
X 10 –4
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
MMBT3904WT1
MMBT3906WT1
0.5
0.1
8.0
10
hfe
—
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Output Admittance
MMBT3904WT1
MMBT3906WT1
100
100
400
400
h oe
NF
µmhos
dB
(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
(V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Noise Figure
MMBT3904WT1
MMBT3906WT1
1.0
3.0
40
60
(V CE= 5.0Vdc, I C = 100µAdc, R S=1.0 kΩ, f =1.0kHz)
(V CE= –5.0Vdc, I C = –100 µAdc, R S=1.0 kΩ, f =1.0kHz)
MMBT3904WT1
MMBT3906WT1
––
––
5.0
4.0
K3–2/9
LESHAN RADIO COMPANY, LTD.
NPN MMBT3904WT1 PNP MMBT3906WT1
SWITCHING CHARACTERISTICS
Delay Time (V CC = 3.0 Vdc, V BE = –0.5 Vdc)
(V CC = –3.0 Vdc, V BE = 0.5 Vdc)
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
t d
t r
t s
t f
—
—
—
—
—
—
—
—
35
35
ns
ns
ns
ns
Rise Time (I C = 10 mAdc, I B1 = 1.0 mAdc)
(I C = –10 mAdc, I B1 = –1.0 mAdc)
Storage Time (V CC = 3.0 Vdc, I C = 10 mAdc)
(V CC = –3.0 Vdc, I C = –10 mAdc)
Fall Time (I B1 = I B2 = 1.0 mAdc)
35
35
200
225
50
(I B1 = I B2 = –1.0 mAdc)
75
2. Pulse Test: Pulse Width
<
300 µs; Duty Cycle <2.0%.
MMBT3904WT1
+3 V
300 ns
+3 V
+10.9 V
10 < t 1 < 500 µs
t
275
1
DUTY CYCLE = 2%
+10.9 V
DUTY CYCLE = 2%
275
10 k
10 k
– 0.5 V
0
C S < 4.0 pF*
C S < 4.0 pF*
<1 ns
1N916
– 9.1 V
<1.0 ns
*Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T J = 25°C
T J = 125°C
10
5000
3000
2000
V CC = 40 V
I C / I B = 10
MMBT3904WT1
MMBT3904WT1
7.0
5.0
1000
700
Cibo
500
3.0
2.0
300
200
Q T
C obo
Q A
100
70
1.0
50
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I C , COLLECTOR CURRENT (mA)
REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Charge Data
Figure 3. Capacitance
K3–3/9
LESHAN RADIO COMPANY, LTD.
NPN MMBT3904WT1 PNP MMBT3906WT1
MMBT3904WT1
500
500
V CC = 40 V
I C /I B = 10
I C /I B = 10
300
200
300
200
100
70
100
70
t r @V CC=3.0V
40 V
50
50
30
20
30
20
15 V
10
7
10
7
MMBT3904WT1
2.0 3.0
MMBT3904WT1
2.0 V
t d@V OB=0V
5
5
1.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise Time
500
500
300
t’s= ts –1/8t f
IB1 = IB2
V CC=40V
300
200
I C /I B = 10
I B1 = I B2
200 I C /I B = 20
I C /I B = 20
100
70
100
70
50
50
I C /I B = 20
I C /I B = 10
I C /I B = 10
30
20
30
20
10
7
10
MMBT3904WT1
MMBT3904WT1
7
5
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V CE = 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz)
12
14
SOURCE RESISTANCE= 200Ω
I C = 1.0 mA
f = 1.0 kHz
I C = 1.0 mA
12
10
8
10
8
I C = 0.5 mA
SOURCE RESISTANCE= 200 Ω
I C = 0.5 mA
I C = 50 µA
6
SOURCE RESISTANCE =1.0kΩ
I C = 50 µA
I C = 100 µA
6
4
4
2
2
SOURCE RESISTANCE= 500Ω
MMBT3904WT1
20 40
MMBT3904WT1
20 40 100
I C = 100 µA
0
0
0.1
0.2 0.4
1.0
2.0
4.0
10
0.1
0.2 0.4
1.0
2.0
4.0
10
100
f, FREQUENCY (kHz)
R S , SOURCE RESISTANCE (kΩ)
Figure 9. Noise Figure
Figure 10. Noise Figure
K3–4/9
LESHAN RADIO COMPANY, LTD.
NPN MMBT3904WT1 PNP MMBT3906WT1
h PARAMETERS
(V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C)
300
200
100
MMBT3904WT1
50
MMBT3904WT1
20
10
100
70
5
50
2
1
30
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 11. Current Gain
Figure 12. Output Admittance
10
20
10
7.0
5.0
MMBT3904WT1
MMBT3904WT1
5.0
3.0
2.0
2.0
1.0
1.0
0.5
0.2
0.7
0.5
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
K3–5/9
LESHAN RADIO COMPANY, LTD.
NPN MMBT3904WT1 PNP MMBT3906WT1
MMBT3904WT1
TYPICAL STATIC CHARACTERISTICS
20
10
T J = +125°C
+25°C
V
CE = 1.0 V
MMBT3904WT1
0.7
0.5
–55°C
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
I C , COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
1.0
0.8
0.6
0.4
0.2
0
T J = 25°C
100 mA
MMBT3904WT1
I C = 1.0 mA
30 mA
10 mA
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I B , BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
1.2
1.0
0.8
0.6
0.4
0.2
0
T J = 25°C
MMBT3904WT1
MMBT3904WT1
V BE(sat) @ I C /I B =10
0.5
0
+25°C TO +125°C
–55°C TO +25°C
θ
VC for V CE
V BE @ V CE =1.0 V
– 0.5
–1.0
–1.5
–2.0
–55°C TO +25°C
+25°C TO +125°C
V CE(sat) @ I C /I B =10
θ
VB for V BE
1.0
2.0
5.0
10
20
50
100
200
0
20
40
60
80
100 120
140
160 180
200
C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
K3–6/9
LESHAN RADIO COMPANY, LTD.
NPN MMBT3904WT1 PNP MMBT3906WT1
MMBT3906WT1
3 V
3 V
+9.1 V
< 1 ns
275
275
< 1 ns
10 k
10 k
0
C S < 4 pF*
C S < 4 pF*
1N916
+10.6 V
300 ns
DUTY CYCLE = 2%
10 < t 1 < 500 µs
10.9 V
t 1
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 19. Delay and Rise Time
Equivalent Test Circuit
Figure 20. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T J = 25°C
T J = 125°C
10.0
5000
3000
2000
MMBT3906WT1
V CC = 40 V
I C /I B = 10
MMBT3906WT1
7.0
5.0
Q T
C obo
C ibo
1000
700
500
3.0
2.0
300
200
Q A
100
70
1.0
50
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 21. Capacitance
Figure 22. Charge Data
500
500
MMBT3906WT1
I C /I B = 10
V CC = 40 V
300
200
300
200
MMBT3906WT1
I B1 = I B2
I C /I B = 20
100
70
100
70
t r @ V CC = 3.0 V
50
50
15 V
I C /I B = 10
30
20
30
20
40 V
2.0 V
10
7
10
7
t d @ V OB = 0 V
20 30
5
5
1.0
2.0 3.0
5.0 7.0 10
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 23. Turn–On Time
Figure 24. Fall Time
K3–7/9
LESHAN RADIO COMPANY, LTD.
NPN MMBT3904WT1 PNP MMBT3906WT1
MMBT3906WT1
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V CE = –5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz)
5.0
4.0
3.0
2.0
14
SOURCE RESISTANCE= 200Ω
I C = 1.0 mA
I
C = 1.0 mA
f = 1.0 kHz
12
10
8
SOURCE RESISTANCE= 200 Ω
I C = 0.5 mA
I C = 0.5 mA
SOURCE RESISTANCE =2.0kΩ
I C = 50 µA
6
I C = 50 µA
4
SOURCE RESISTANCE= 2.0kΩ
I C = 100 µA
I C = 100 µA
1.0
0
2
MMBT3906WT1
20 40 100
MMBT3906WT1
20 40 100
0
0.1
0.2 0.4
1.0
2.0
4.0
10
0.1
0.2 0.4
1.0
2.0
4.0
10
f, FREQUENCY (kHz)
R S , SOURCE RESISTANCE (kΩ)
Figure 25
Figure 26
h PARAMETERS
(V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C)
100
70
300
MMBT3906WT1
MMBT3906WT1
50
30
20
200
100
70
10
7.0
5.0
50
30
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0 7.0 10
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 27. Current Gain
Figure 28. Output Admittance
10
20
10
MMBT3906WT1
MMBT3906WT1
7.0
5.0
5.0
3.0
2.0
2.0
1.0
1.0
0.5
0.2
0.7
0.5
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 29. Input Impedance
Figure 30. Voltage Feedback Ratio
K3–8/9
LESHAN RADIO COMPANY, LTD.
NPN MMBT3904WT1 PNP MMBT3906WT1
MMBT3906WT1
STATIC CHARACTERISTICS
20
10
T J = +125°C
+25°C
V CE = 1.0 V
0.7
0.5
–55°C
0.3
0.2
MMBT3906WT1
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
I C , COLLECTOR CURRENT (mA)
Figure 31. DC Current Gain
1.0
0.8
0.6
0.4
0.2
0
T J = 25°C
100 mA
MMBT3906WT1
30 mA
I C=1.0 mA
10 mA
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I B , BASE CURRENT (mA)
Figure 32. Collector Saturation Region
1.0
1.2
1.0
0.8
0.6
0.4
0.2
0
V BE(sat) @ I C /I B =10
T J = 25°C
0.5
0
+25°C TO +125°C
θ
VC for V CE(sat)
V BE @ V CE =1.0 V
–55°C TO +25°C
– 0.5
–1.0
–1.5
–2.0
MMBT3906WT1
MMBT3906WT1
VB for V BE(sat)
+25°C TO +125°C
–55°C TO +25°C
θ
V CE(sat) @ I C /I B =10
0
20
40
60
80
100
120
140
160 180
200
1.0
2.0
5.0
10
20
50
100
200
I C , COLLECTOR CURRENT (mA)
C , COLLECTOR CURRENT (mA)
Figure 34. Temperature Coefficients
Figure 33. “ON” Voltages
K3–9/9
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