MMBT3904WT1G [ONSEMI]
General Purpose Transistors; 通用晶体管
| 型号： | MMBT3904WT1G |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors |
| 文件： | 总12页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT3904WT1, NPN
MMBT3906WT1, PNP
General Purpose
Transistors
NPN and PNP Silicon
http://onsemi.com
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−323/SC−70 package which
is designed for low power surface mount applications.
COLLECTOR
3
Features
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
BASE
Compliant
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
3
SC−70 (SOT−323)
CASE 419
Collector−Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
1
MMBT3904WT1
MMBT3906WT1
40
−40
STYLE 3
2
Collector−Base Voltage
Emitter−Base Voltage
Vdc
Vdc
MMBT3904WT1
MMBT3906WT1
60
−40
MARKING DIAGRAM
MMBT3904WT1
MMBT3906WT1
6.0
−5.0
xx M G
G
Collector Current − Continuous
MMBT3904WT1
MMBT3906WT1
I
C
mAdc
1
200
−200
xx = AM for MMBT3904WT1
= 2A for MMBT3906WT1
THERMAL CHARACTERISTICS
M
G
= Date Code*
= Pb−Free Package
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1)
P
D
150
mW
(Note: Microdot may be in either location)
@T = 25°C
A
*Date Code orientation may vary depending
upon manufacturing location.
Thermal Resistance, Junction−to−Ambient
R
833
°C/W
°C
q
JA
Junction and Storage Temperature
T , T
−55 to +150
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT3904WT1G
SC−70/
SOT−323
(Pb−Free)
3000/Tape & Reel
MMBT3906WT1G
SC−70/
SOT−323
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
January, 2011 − Rev. 7
MMBT3904WT1/D
MMBT3904WT1, NPN MMBT3906WT1, PNP
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
MMBT3904WT1
MMBT3906WT1
40
−
−
C
B
(I = −1.0 mAdc, I = 0)
−40
C
B
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
Vdc
Vdc
MMBT3904WT1
MMBT3906WT1
60
−40
−
−
C
E
(I = −10 mAdc, I = 0)
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
MMBT3904WT1
MMBT3906WT1
6.0
−5.0
−
−
E
C
(I = −10 mAdc, I = 0)
E
C
Base Cutoff Current
I
nAdc
nAdc
BL
(V = 30 Vdc, V = 3.0 Vdc)
MMBT3904WT1
MMBT3906WT1
−
−
50
CE
EB
(V = −30 Vdc, V = −3.0 Vdc)
−50
CE
EB
Collector Cutoff Current
(V = 30 Vdc, V = 3.0 Vdc)
I
CEX
MMBT3904WT1
MMBT3906WT1
−
−
50
−50
CE
EB
EB
(V = −30 Vdc, V = −3.0 Vdc)
CE
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
−
(I = 0.1 mAdc, V = 1.0 Vdc)
MMBT3904WT1
MMBT3906WT1
40
70
100
60
30
60
80
100
60
30
−
−
300
−
−
−
−
300
−
−
C
CE
(I = 1.0 mAdc, V = 1.0 Vdc)
C
CE
CE
CE
CE
(I = 10 mAdc, V = 1.0 Vdc)
C
(I = 50 mAdc, V = 1.0 Vdc)
C
(I = 100 mAdc, V = 1.0 Vdc)
C
(I = −0.1 mAdc, V = −1.0 Vdc)
C
CE
CE
CE
CE
(I = −1.0 mAdc, V = −1.0 Vdc)
C
(I = −10 mAdc, V = −1.0 Vdc)
C
(I = −50 mAdc, V = −1.0 Vdc)
C
(I = −100 mAdc, V = −1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
MMBT3904WT1
MMBT3906WT1
−
−
−
−
0.2
0.3
−0.25
−0.4
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
(I = −10 mAdc, I = −1.0 mAdc)
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
MMBT3904WT1
MMBT3906WT1
0.65
−
−0.65
−
0.85
0.95
−0.85
−0.95
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
(I = −10 mAdc, I = −1.0 mAdc)
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
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2
MMBT3904WT1, NPN MMBT3906WT1, PNP
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
Symbol
Min
Max
Unit
f
T
MHz
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
MMBT3904WT1
MMBT3906WT1
300
250
−
−
C
CE
(I = −10 mAdc, V = −20 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
pF
pF
obo
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
MMBT3904WT1
MMBT3906WT1
−
−
4.0
4.5
CB
E
(V = −5.0 Vdc, I = 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
MMBT3904WT1
MMBT3906WT1
−
−
8.0
10.0
EB
C
C
(V = −0.5 Vdc, I = 0, f = 1.0 MHz)
EB
Input Impedance
h
k W
ie
re
fe
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
1.0
2.0
10
12
CE
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
C
−4
Voltage Feedback Ratio
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
h
h
X 10
−
MMBT3904WT1
MMBT3906WT1
0.5
0.1
8.0
10
CE
C
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
Small−Signal Current Gain
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
100
100
400
400
CE
C
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
Output Admittance
h
mmhos
dB
oe
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
1.0
3.0
40
60
CE
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
C
Noise Figure
NF
(V = 5.0 Vdc, I = 100 mAdc, R = 1.0 k W, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
−
−
5.0
4.0
CE
C
S
(V = −5.0 Vdc, I = −100 mAdc, R = 1.0 k W, f = 1.0 kHz)
CE
C
S
SWITCHING CHARACTERISTICS
Characteristic
Condition
Symbol
Min
Max
Unit
(V = 3.0 Vdc, V = −0.5 Vdc)
MMBT3904WT1
MMBT3906WT1
Delay Time
Rise Time
Storage Time
Fall Time
t
−
−
35
35
ns
CC
BE
d
(V = −3.0 Vdc, V = 0.5 Vdc)
CC
BE
(I = 10 mAdc, I = 1.0 mAdc)
MMBT3904WT1
MMBT3906WT1
t
−
−
35
35
C
B1
r
(I = −10 mAdc, I = −1.0 mAdc)
C
B1
(V = 3.0 Vdc, I = 10 mAdc)
MMBT3904WT1
MMBT3906WT1
t
−
−
200
225
ns
CC
C
s
(V = −3.0 Vdc, I = −10 mAdc)
CC
C
(I = I = 1.0 mAdc)
MMBT3904WT1
MMBT3906WT1
t
−
−
50
75
B1
B2
f
(I = I = −1.0 mAdc)
B1
B2
MMBT3904WT1
+3 V
+3 V
DUTY CYCLE = 2%
300 ns
t
1
10 < t < 500 ms
1
+10.9 V
DUTY CYCLE = 2%
+10.9 V
< 1 ns
275
275
10 k
10 k
0
-ꢀ0.5 V
C
< 4 pF*
C < 4 pF*
S
S
1N916
-ꢀ9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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3
MMBT3904WT1, NPN MMBT3906WT1, PNP
MMBT3904WT1
TYPICAL TRANSIENT CHARACTERISTICS
T = 25°C
J
T = 125°C
J
500
500
I /I = 10
C B
V
= 40 V
CC
I /I = 10
300
200
300
200
C
B
100
70
100
70
t @ V = 3.0 V
r CC
50
50
30
20
30
20
40 V
15 V
10
7
MMBT3904WT1
10
7
MMBT3904WT1
2.0 V
t @ V = 0 V
d OB
5
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. Turn−On Time
Figure 4. Rise Time
500
500
1
t′ = t - / t
s
s
8
f
V
I
= 40 V
CC
300
200
300
200
I
= I
B1 B2
= I
B1 B2
I /I = 20
C B
I /I = 10
C B
I /I = 20
C B
100
70
100
70
I /I = 20
C B
50
50
I /I = 10
C B
I /I = 10
C B
30
20
30
20
10
7
10
7
MMBT3904WT1
MMBT3904WT1
5
5
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Storage Time
Figure 6. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(V = 5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz)
CE
A
12
10
8
14
12
SOURCE RESISTANCE = 200 W
= 1.0 mA
f = 1.0 kHz
I
= 1.0 mA
C
I
C
I
C
= 0.5 mA
10
8
SOURCE RESISTANCE = 200 W
= 0.5 mA
I
C
= 50 mA
I
C
6
I
C
= 100 mA
SOURCE RESISTANCE = 1.0 k
= 50 mA
6
4
2
0
I
C
4
2
0
SOURCE RESISTANCE = 500 W
= 100 mA
I
C
MMBT3904WT1
20
40
MMBT3904WT1
20
40
0.1 0.2
0.4
1.0 2.0 4.0
10
100
0.1 0.2
0.4
1.0 2.0
4.0
10
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
S
Figure 7. Noise Figure
Figure 8. Noise Figure
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MMBT3904WT1, NPN MMBT3906WT1, PNP
MMBT3904WT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
300
200
MMBT3904WT1
MMBT3904WT1
50
20
10
5
100
70
50
2
1
30
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 9. Current Gain
Figure 10. Output Admittance
20
10
10
7.0
5.0
MMBT3904WT1
MMBT3904WT1
5.0
3.0
2.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
1000
100
10
V
= 1 V
CE
T = 150°C
J
25°C
-ꢀ55°C
MMBT3904WT1
1000
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 13. DC Current Gain
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MMBT3904WT1, NPN MMBT3906WT1, PNP
MMBT3904WT1
1.0
0.8
0.6
0.4
T = 25°C
J
MMBT3904WT1
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 14. Collector Saturation Region
0.9
1.4
I /I = 10
C
B
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I /I = 10
C
B
1.2
1.0
0.8
0.6
150°C
25°C
−55°C
25°C
−55°C
150°C
0.4
0.2
0.1
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
1.4
V
CE
= 1 V
1.2
1.0
0.8
0.6
−55°C
25°C
150°C
0.4
0.2
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
Figure 17. Base Emitter Voltage vs. Collector
Current
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MMBT3904WT1, NPN MMBT3906WT1, PNP
MMBT3904WT1
T = 25°C
J
T = 125°C
J
1.0
0.5
10
MMBT3904WT1
MMBT3904WT1
7.0
+25°C TO +125°C
q
FOR V
CE(sat)
VC
5.0
0
-ꢀ55°C TO +25°C
C
ibo
-ꢀ0.5
-ꢀ1.0
3.0
2.0
-ꢀ55°C TO +25°C
+25°C TO +125°C
C
obo
q
FOR V
BE(sat)
VB
-ꢀ1.5
-ꢀ2.0
1.0
0
20
40
60
80 100 120 140 160 180 200
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
REVERSE BIAS VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 18. Temperature Coefficients
Figure 19. Capacitance
1000
1
100 mS 10 mS
1 S
V
= 1 V
CE
T = 25°C
A
1 mS
0.1
100
10
Thermal Limit
0.01
0.001
0.1
1
10
100
1000
0.1
1
10
, COLLECTOR EMITTER VOLTAGE (V)
CE
100
I , COLLECTOR CURRENT (mA)
V
C
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
Figure 21. Safe Operating Area
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MMBT3904WT1, NPN MMBT3906WT1, PNP
MMBT3906WT1
3 V
3 V
< 1 ns
+ꢀ9.1 V
275
275
< 1 ns
10 k
10 k
0
C
< 4 pF*
C < 4 pF*
S
S
1N916
+10.6 V
300 ns
10 < t < 500 ms
1
t
1
10.9 V
DUTY CYCLE = 2%
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 22. Delay and Rise Time
Equivalent Test Circuit
Figure 23. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T = 25°C
J
T = 125°C
J
500
500
MMBT3906WT1
I /I = 10
C B
V
= 40 V
CC
300
200
300
200
MMBT3906WT1
I = I
B1 B2
I /I = 20
C B
100
100
70
70
50
t @ V = 3.0 V
r CC
50
I /I = 10
C B
30
20
15 V
30
20
40 V
2.0 V
10
7
10
7
t @ V = 0 V
d OB
5
5
1.0
2.0 3.0
5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0
5.0 7.0
10
20
30 50 70 100
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 24. Turn−On Time
Figure 25. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
5.0
4.0
3.0
SOURCE RESISTANCE = 200 W
= 1.0 mA
f = 1.0 kHz
I
= 1.0 mA
C
I
C
10
8.0
6.0
4.0
2.0
0
I
C
= 0.5 mA
SOURCE RESISTANCE = 200 W
= 0.5 mA
I
C
SOURCE RESISTANCE = 2.0 k
= 50 mA
I
C
2.0
1.0
0
I
C
= 50 mA
SOURCE RESISTANCE = 2.0 k
= 100 mA
I
C
= 100 mA
I
C
MMBT3906WT1
10 20
40
MMBT3906WT1
20
40
0.1 0.2 0.4
1.0 2.0 4.0
100
0.1 0.2
0.4
1.0 2.0
4.0
10
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (kW)
S
Figure 26.
Figure 27.
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MMBT3904WT1, NPN MMBT3906WT1, PNP
MMBT3906WT1
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
100
300
200
70
MMBT3906WT1
MMBT3906WT1
50
30
20
100
70
10
50
30
7.0
5.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 28. Current Gain
Figure 29. Output Admittance
20
10
10
7.0
5.0
MMBT3906WT1
MMBT3906WT1
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 30. Input Impedance
Figure 31. Voltage Feedback Ratio
STATIC CHARACTERISTICS
1000
100
10
V
CE
= 1 V
T = 150°C
J
25°C
-ꢀ55°C
MMBT3906WT1
1000
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 32. DC Current Gain
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MMBT3904WT1, NPN MMBT3906WT1, PNP
MMBT3906WT1
1.0
0.8
0.6
0.4
0.2
T = 25°C
J
MMBT3906WT1
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 33. Collector Saturation Region
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
1.4
I /I = 10
C
B
I /I = 10
C
B
1.2
1.0
0.8
0.6
150°C
25°C
−55°C
25°C
−55°C
150°C
0.10
0.4
0.2
0.05
0
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 34. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 35. Base Emitter Saturation Voltage vs.
Collector Current
1.4
V
CE
= 1 V
1.2
1.0
0.8
0.6
−55°C
25°C
150°C
0.4
0.2
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
Figure 36. Base Emitter Voltage vs. Collector
Current
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10
MMBT3904WT1, NPN MMBT3906WT1, PNP
MMBT3906WT1
T = 25°C
J
T = 125°C
J
10
1.0
0.5
MMBT3906WT1
7.0
q
FOR V
+25°C TO +125°C
VC
CE(sat)
5.0
C
-ꢀ55°C TO +25°C
obo
0
-0.5
-1.0
-1.5
-2.0
C
ibo
MMBT3906WT1
3.0
2.0
+25°C TO +125°C
-ꢀ55°C TO +25°C
q
FOR V
BE(sat)
VS
1.0
0.1
0
20
40
60
80 100 120 140 160 180 200
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
30 40
I , COLLECTOR CURRENT (mA)
C
REVERSE BIAS VOLTAGE (VOLTS)
Figure 37. Temperature Coefficients
Figure 38. Capacitance
1000
1
100 mS 10 mS
V
CE
= 1 V
T = 25°C
A
1 mS
0.1
1 S
100
10
Thermal Limit
0.01
0.001
0.1
1
10
100
1000
0.1
1
10
, COLLECTOR EMITTER VOLTAGE (V)
CE
100
I , COLLECTOR CURRENT (mA)
V
C
Figure 39. Current Gain Bandwidth Product
vs. Collector Current
Figure 40. Safe Operating Area
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11
MMBT3904WT1, NPN MMBT3906WT1, PNP
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.65 BSC
0.38
2.10
0.026 BSC
0.015
0.083
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
E
STYLE 3:
c
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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