IXXH75N60B3 [LITTELFUSE]

Insulated Gate Bipolar Transistor,;


型号：	IXXH75N60B3
厂家：	LITTELFUSE
描述：	Insulated Gate Bipolar Transistor, 栅
文件：	总7页 (文件大小：169K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Advance Technical Information

XPT^TM600V IGBT

GenX3^TM

V_CES= 600V

I_C110= 75A

V_CE(sat)≤ 1.85V

t_fi(typ)= 125ns

IXXH75N60B3

Extreme Light Punch Through

IGBT for 5-30 kHz Switching

TO-247 AD

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 175°C

600

T_J= 25°C to 175°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

Tab

I_C25

I_C110

T_C= 25°C

T_C= 110°C

160

G = Gate

E = Emitter

Collector

Tab = Collector

I_CM

T_C= 25°C, 1ms

300

I_A

E_AS

T_C= 25°C

500

SSOA

V_GE= 15V, T_VJ= 150°C, R_G= 5Ω

Clamped Inductive Load

I_CM= 150

μs

Features

(RBSOA)

@V_CE≤ V_CES

^zOptimized for 5-30kHz Switching

^zSquare RBSOA

t_sc

V_GE= 15V, V_CE= 360V, T_J= 150°C

(SCSOA)

R_G= 22Ω, Non Repetitive

^zAvalanche Capability

^zShort Circuit Capability

^zInternational Standard Package

P_C

T_C= 25°C

750

T_J

T_JM

T_stg

-55 ... +175

175

°C

-55 ... +175

Advantages

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

^zHigh Power Density

^z175°C Rated

^zExtremely Rugged

^zLow Gate Drive Requirement

M_d

Mounting Torque

1.13/10

Nm/lb.in.

Weight

Applications

^zPower Inverters

^zUPS

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

600

3.0

Typ.

Max.

^zMotor Drives

^zSMPS

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

5.5

25 μA

2 mA

T_J= 150°C

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C= 60A, V_GE= 15V, Note 1

1.60

2.00

1.85

DS100327(05/11)

IXXH75N60B3

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

TO-247 (IXXH) Outline

Min.

Typ.

Max.

g_fs

I_C= 60A, V_CE= 10V, Note 1

C_ies

C_oes

C_res

3290

195

V_CE= 25V, V_GE= 0V, f = 1MHz

∅ P

Q_g(on)

Q_ge

Q_gc

107

I_C= 75A, V_GE= 15V, V_CE= 0.5 • V_CES

t_d(on)

t_ri

E_on

t_d(off)

t_fi

Inductive load, T_J= 25°C

I_C= 60A, V_GE= 15V

Terminals: 1 - Gate

3 - Emitter

2 - Collector

1.7

118

125

1.5

Dim.

Millimeter

Min. Max.

Inches

Min. Max.

160

2.1

V_CE= 400V, R_G= 5Ω

A₁

A₂

4.7

2.2

5.3

2.54

2.6

.185 .209

.087 .102

.059 .098

Note 2

E_of

t_d(on)

t_ri

b₁

b₂

1.0

1.65

2.87

1.4

2.13

3.12

.040 .055

.065 .084

.113 .123

Inductive load, T_J= 150°C

I_C= 60A, V_GE= 15V

E_on

t_d(off)

t_fi

2.6

145

170

2.2

.016 .031

.819 .845

.610 .640

20.80 21.46

15.75 16.26

V_CE= 400V, R_G= 5Ω

5.20

19.81 20.32

4.50

5.72 0.205 0.225

Note 2

.780 .800

.177

E_off

∅P 3.55

3.65

.140 .144

R_thJC

R_thCS

0.20 °C/W

°C/W

5.89

6.40 0.232 0.252

0.21

4.32

6.15 BSC

5.49

.170 .216

242 BSC

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V_CE(clamp), T_Jor R_G.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

IXXH75N60B3

Fig. 2. Extended Output Characteristics @ T_J= 25ºC

Fig. 1. Output Characteristics @ T_J= 25ºC

300

250

200

150

100

V_GE= 15V

14V

140

120

100

13V

12V

14V

13V

11V

10V

12V

11V

10V

0.5

1.5

2.5

3.5

4.5

V_CE- Volts

Fig. 4. Dependence of V_CE(sat)on

Junction Temperature

Fig. 3. Output Characteristics @ T_J= 150ºC

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

V_GE= 15V

140

120

100

V_GE= 15V

14V

13V

I _C= 150A

12V

11V

10V

I _C= 75A

I _C= 37.5A

-50

-25

100

125

150

175

0.5

1.5

2.5

3.5

V_CE- Volts

T_J- Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

Fig. 6. Input Admittance

120

100

T_J= 25ºC

I _C= 150A

T_J= 150ºC

25ºC

- 40ºC

75A

37.5A

V_GE- Volts

IXXH75N60B3

Fig. 8. Gate Charge

Fig. 7. Transconductance

V_CE= 300V

I _C= 75A

T_J= - 40ºC, 25ºC, 150ºC

I _G= 10mA

100

125

150

100

110

I_C- Amperes

Q_G- NanoCoulombs

Fig. 9. Capacitance

Fig. 10. Reverse-Bias Safe Operating Area

10,000

1,000

100

160

140

120

100

ies

oes

res

T_J= 150ºC

R_G= 5

Ω

dv / dt < 10V / ns

= 1 MHz

100

200

300

400

500

600

Fig.³1⁰1. Maximum ⁴T⁰ransient Thermal Impedance

V_CE- Volts

Fig. 11. Maximum Transient Thermal Impedance

aasss

0.4

0.1

0.01

0.001

0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXXH75N60B3

Fig. 13. Inductive Switching Energy Loss vs.

Fig. 12. Inductive Switching Energy Loss vs.

Gate Resistance

Collector Current

3.6

3.2

2.8

2.4

4.5

_on- - - -

V_GE= 15V

_on- - - -

off

R_G= 5

off

Ω ,

_CE= 400V

T_J= 150ºC , V_GE= 15V

V_CE= 400V

3.5

T_J= 150ºC

3.5

2.5

I _C= 80A

1.6

1.2

0.8

0.4

T_J= 25ºC

2.5

1.5

I _C= 40A

1.5

0.5

R_G- Ohms

I_C- Amperes

Fig. 14. Inductive Switching Energy Loss vs.

Junction Temperature

Fig. 15. Inductive Turn-off Switching Times vs.

Gate Resistance

3.5

3.0

2.5

2.0

1.5

1.0

0.5

300

280

260

240

220

200

180

160

140

120

500

off

_on- - - -

t _{f i}

_d(off)- - - -

450

400

350

300

250

200

150

100

R_G= 5

V_GE= 15V

_CE= 400V

Ω ,

T_J= 150ºC, _GE= 15V

_CE= 400V

I _C= 80A

I _C= 40A

I _C= 80A

100

125

150

R_G- Ohms

T_J- Degrees Centigrade

Fig. 16. Inductive Turn-off Switching Times vs.

Collector Current

Fig. 17. Inductive Turn-off Switching Times vs.

Junction Temperature

240

220

200

180

160

140

120

100

220

200

180

160

140

120

100

300

280

260

240

220

200

180

160

140

120

100

280

260

240

220

200

180

160

140

120

100

t_{f i}

t_d(on)

- - - -

t _{f i}

t_d(off)

- - - -

R_G= 5

, V_GE= 15V

Ω

R_G= 5

V_GE= 15V

Ω

V_CE= 400V

I _C= 40A

T_J= 150ºC

T_J= 25ºC

I _C= 80A

100

125

150

T_J- Degrees Centigrade

I_C- Amperes

IXXH75N60B3

Fig. 19. Inductive Turn-on Switching Times vs.

Collector Current

Fig. 18. Inductive Turn-on Switching Times vs.

Gate Resistance

120

100

240

200

160

120

140

120

100

t_{r i}

t_d(on)- - - -

t _{r i}

t_d(on)- - - -

, V_GE= 15V

T_J= 25ºC

150ºC

I _C= 40A

T_J= 150ºC, V_GE= 15V

R_G= 5

Ω

V_CE= 400V

T_J= 150ºC, 25ºC

I _C= 80A

I_C- Amperes

R_G- Ohms

Fig. 20. Inductive Turn-on Switching Times vs.

Junction Temperature

180

160

140

120

100

t _{r i}

t_d(on)- - - -

R_G= 5

, V_GE= 15V

Ω

V_CE= 400V

I _C= 80A

I _C= 40A

100

125

150

T_J- Degrees Centigrade

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: IXX_75N60B3D1(71)05-03-11

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXXH75N60B3 [LITTELFUSE]

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