IXXH75N60B3D1 [LITTELFUSE]
Insulated Gate Bipolar Transistor,;
| 型号： | IXXH75N60B3D1 |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 局域网 栅 功率控制 晶体管 |
| 文件： | 总8页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
XPTTM 600V IGBT
GenX3TM w/ Diode
VCES = 600V
IC110 = 75A
VCE(sat) ≤ 1.85V
tfi(typ) = 125ns
IXXH75N60B3D1
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
TO-247 AD
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
600
600
V
V
TJ = 25°C to 175°C, RGE = 1MΩ
G
VGES
VGEM
Continuous
Transient
±20
±30
V
V
C
Tab
=
E
IC25
IC110
IF110
TC = 25°C
TC = 110°C
TC = 110°C
160
75
30
A
A
A
G = Gate
E = Emitter
C
Collector
Tab = Collector
ICM
TC = 25°C, 1ms
300
A
IA
EAS
TC = 25°C
TC = 25°C
30
A
500
mJ
A
Features
SSOA
VGE = 15V, TVJ = 150°C, RG = 5Ω
ICM = 150
(RBSOA)
Clamped Inductive Load
@VCE ≤ VCES
z Optimized for 5-30kHz Switching
z Square RBSOA
tsc
VGE= 15V, VCE = 360V, TJ = 150°C
10
μs
z Anti-Parallel Ultra Fast Diode
z Avalanche Capability
(SCSOA)
RG = 22Ω, Non Repetitive
PC
TC = 25°C
750
W
z Short Circuit Capability
z International Standard Package
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
-55 ... +175
Advantages
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
z High Power Density
z 175°C Rated
z Extremely Rugged
z Low Gate Drive Requirement
Md
Mounting Torque
1.13/10
6
Nm/lb.in.
g
Weight
Applications
Symbol
Test Conditions
Characteristic Values
z Power Inverters
z UPS
(TJ = 25°C, Unless Otherwise Specified)
Min.
600
3.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
z Motor Drives
z SMPS
5.5
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
25 μA
3 mA
TJ = 150°C
TJ = 150°C
IGES
VCE = 0V, VGE = ±20V
±100 nA
VCE(sat)
IC = 60A, VGE = 15V, Note 1
1.60
2.00
1.85
V
V
© 2013 IXYS CORPORATION, All Rights Reserved
DS100328B(01/13)
IXXH75N60B3D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-247 (IXXH) Outline
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
20
32
S
Cies
Coes
Cres
3290
195
63
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
∅ P
1
2
3
Qg(on)
Qge
Qgc
107
30
nC
nC
nC
IC = 75A, VGE = 15V, VCE = 0.5 • VCES
48
td(on)
tri
Eon
td(off)
tfi
35
75
ns
ns
mJ
ns
ns
e
Inductive load, TJ = 25°C
IC = 60A, VGE = 15V
Terminals: 1 - Gate
3 - Emitter
2 - Collector
1.7
118
125
1.5
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
160
VCE = 400V, RG = 5Ω
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Note 2
Eof
2.1 mJ
f
td(on)
tri
36
72
ns
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Inductive load, TJ = 150°C
IC = 60A, VGE = 15V
Eon
td(off)
tfi
2.6
145
170
2.2
mJ
ns
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
VCE = 400V, RG = 5Ω
ns
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Note 2
.780 .800
.177
Eoff
mJ
∅P 3.55
3.65
.140 .144
RthJC
RthCS
0.20 °C/W
°C/W
Q
5.89
6.40 0.232 0.252
0.21
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
VF
IF = 30A, VGE = 0V, Note 1
2.7
V
V
TJ = 150°C
1.6
IRM
trr
TJ = 100°C
TJ = 100°C
4
A
ns
ns
IF = 30A, VGE = 0V, -diF/dt = 100A/μs,
VR = 100V
100
25
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
RthJC
0.9 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXXH75N60B3D1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
300
250
200
150
100
50
VGE = 15V
14V
VGE = 15V
140
120
100
80
13V
12V
14V
13V
11V
10V
12V
60
11V
40
9V
10V
9V
20
8V
7V
7V
0
0
0
0
9
0.5
1
1.5
2
2.5
3
3.5
4.5
15
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGE = 15V
140
120
100
80
VGE = 15V
14V
13V
I C = 150A
12V
11V
10V
I C = 75A
60
40
9V
8V
6V
I C = 37.5A
20
0
-50
-25
0
25
50
75
100
125
150
175
0.5
1
1.5
2
2.5
3
3.5
4
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
120
100
80
60
40
20
0
8
7
6
5
4
3
2
1
TJ = 25ºC
I C = 150A
TJ = 150ºC
25ºC
- 40ºC
75A
37.5A
4
5
6
7
8
9
10
11
12
10
11
12
13
14
VGE - Volts
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
IXXH75N60B3D1
Fig. 8. Gate Charge
Fig. 7. Transconductance
60
50
40
30
20
10
0
16
14
12
10
8
VCE = 300V
I C = 75A
TJ = - 40ºC, 25ºC, 150ºC
I G = 10mA
6
4
2
0
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
100
110
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
10,000
1,000
100
160
140
120
100
80
C
ies
oes
res
C
C
60
40
TJ = 150ºC
RG = 5
Ω
20
dv / dt < 10V / ns
= 1 MHz
f
0
10
100
200
300
400
500
600
0
5
10
15
20
25
35
3040
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
aasss
0.4
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH75N60B3D1
Fig. 13. Inductive Switching Energy Loss vs.
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Collector Current
3.6
3.2
2.8
2.4
2
4.5
5
4.5
4
9
8
7
6
5
4
3
2
1
E
E
on - - - -
E
E
off
on - - - -
4
off
RG = 5
VGE = 15V
Ω ,
TJ = 150ºC , VGE = 15V
VCE = 400V
3.5
3
VCE = 400V
TJ = 150ºC
3.5
3
2.5
2
I C = 80A
1.6
1.2
0.8
0.4
0
TJ = 25ºC
2.5
2
1.5
1
I C = 40A
1.5
1
0.5
0
20
25
30
35
40
45
50
55
60
65
70
75
80
5
10
15
20
25
30
35
40
45
50
55
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
3.5
3.0
2.5
2.0
1.5
1.0
0.5
6
5
4
3
2
1
0
300
280
260
240
220
200
180
160
140
120
500
E
off
E
on - - - -
t f i
t
d(off) - - - -
450
400
350
300
250
200
150
100
50
RG = 5
VGE = 15V
CE = 400V
Ω ,
TJ = 150ºC, GE = 15V
V
V
CE = 400V
V
I C = 80A
I C = 40A
I C = 40A
I C = 80A
5
10
15
20
25
30
35
40
45
50
55
25
50
75
100
125
150
RG - Ohms
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
240
220
200
180
160
140
120
100
220
200
180
160
140
120
100
80
300
280
260
240
220
200
180
160
140
120
100
280
260
240
220
200
180
160
140
120
100
80
tf i
td(off)
- - - -
t f i
td(off)
- - - -
RG = 5
, VGE = 15V
Ω
RG = 5
,
VGE = 15V
Ω
VCE = 400V
VCE = 400V
I C = 40A
TJ = 150ºC
TJ = 25ºC
I C = 80A
25
50
75
100
125
150
20
25
30
35
40
45
50
55
60
65
70
75
80
TJ - Degrees Centigrade
IC - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXXH75N60B3D1
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
120
100
80
60
40
20
0
46
42
38
34
30
26
22
240
200
160
120
80
140
120
100
80
tr i
td(on) - - - -
t r i
td(on) - - - -
, VGE = 15V
TJ = 25ºC
150ºC
I C = 40A
TJ = 150ºC, VGE = 15V
RG = 5
Ω
VCE = 400V
VCE = 400V
TJ = 150ºC, 25ºC
I C = 80A
60
40
40
0
20
20
25
30
35
40
45
50
55
60
65
70
75
80
5
10
15
20
25
30
35
40
45
50
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
180
160
140
120
100
80
46
44
42
40
38
36
34
32
30
28
t r i
td(on) - - - -
RG = 5
, VGE = 15V
Ω
VCE = 400V
I C = 80A
60
40
I C = 40A
20
0
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH75N60B3D1
60
A
1000
nC
30
A
TVJ= 100°C
VR = 300V
TVJ = 100°C
VR = 300V
50
40
30
20
10
0
25
800
IRM
IF= 60A
IF= 30A
IF= 15A
Qr
IF
20
15
10
5
IF= 60A
IF= 30A
IF= 15A
600
400
200
0
TVJ =150°C
TVJ =100°C
TVJ = 25°C
0
A/μs
1000
0
1
2
3 V
VF
100
1000
0
200
400
600
A/μs
-diF/dt
-diF/dt
Fig. 23. Peak Reverse Current IRM
Versus -diF/dt
Fig. 22. Reverse Recovery Charge Qr
Versus -diF/dt
Fig. 21. Forward Current IF Versus VF
2.0
90
20
1.00
μs
TVJ = 100°C
TVJ = 100°C
IF = 30A
VR = 300V
V
ns
VFR
15
tfr
trr
1.5
Kf
0.75
0.50
0.25
0.
tfr
IF = 60A
IF = 30A
80
VFR
IF = 15A
1.0
10
5
IRM
70
Qr
0.5
0.0
60
0
A/μs
1000
0
40
80
120
160
0
200
400
600
1000
A/μs
0
200
400
600
°C
diF/dt
TVJ
-diF/dt
Fig. 25. Recovery Time trr Versus
-diF/dt
Fig. 26. Peak Forward Voltage VFR
and tfr Versus diF/dt
Fig. 24. Dynamic Parameters Qr, IRM
Versus TVJ
1
K/W
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
0.1
ZthJC
1
2
3
0.502
0.193
0.205
0.0052
0.0003
0.0162
0.01
DSEP 29-06
0.001
0.00001
s
0.0001
0.001
0.01
0.1
1
t
Fig. 27. Transient Thermal Resistance Junction to Case
© 2013 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXX_75N60B3(71)05-03-11
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
相关型号：
IXXH75N60C3D1
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
IXYS
IXXK300N60B3
Insulated Gate Bipolar Transistor, 550A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明