IXXN110N65B4H1 [IXYS]
Insulated Gate Bipolar Transistor, 240A I(C), 650V V(BR)CES,;
| 型号： | IXXN110N65B4H1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 240A I(C), 650V V(BR)CES, 栅 |
| 文件： | 总7页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
XPTTM 650V GenX4TM IXXN110N65B4H1
w/ Sonic Diode
VCES = 650V
IC110 = 110A
VCE(sat) 2.10V
tfi(typ) = 43ns
Extreme Light Punch Through
IGBT for 10-30kHz Switching
E
SOT-227B, miniBLOC
E153432
Symbol
Test Conditions
Maximum Ratings
E
VCES
VCGR
TJ = 25°C to 175°C
650
650
V
V
G
TJ = 25°C to 175°C, RGE = 1M
VGES
VGEM
Continuous
Transient
±20
±30
V
V
E
IC25
IC25
IC110
IF110
ICM
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
230
200
110
70
A
A
A
A
C
G = Gate, C = Collector, E = Emitter
TC = 110°C
either emitter terminal can be used as
Main or Kelvin Emitter
TC = 25°C, 1ms
650
A
SSOA
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
ICM = 220
A
Features
(RBSOA)
@VCE VCES
tsc
VGE = 15V, VCE = 360V, TJ = 150°C
10
μs
International Standard Package
miniBLOC, with Aluminium Nitride
(SCSOA)
RG = 82, Non Repetitive
Isolation
2500V~ Isolation Voltage
Anti-Parallel Sonic Diode
Optimized for 10-30kHz Switching
Square RBSOA
Short Circuit Capability
High Current Handling Capability
PC
TC = 25°C
750
W
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
-55 ... +175
VISOL
50/60Hz
IISOL 1mA
t = 1min
t = 1s
2500
3000
V~
V~
Md
Mounting Torque
Terminal Connection Torque
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
Advantages
Weight
30
g
High Power Density
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
Characteristic Values
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
(TJ = 25C, Unless Otherwise Specified)
Min.
650
4.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250A, VGE = 0V
IC = 250A, VCE = VGE
VCE = VCES, VGE = 0V
V
V
6.5
50 A
3 mA
TJ = 150C
IGES
VCE = 0V, VGE = 20V
100 nA
VCE(sat)
IC = 110A, VGE = 15V, Note 1
TJ = 150C
1.72
2.05
2.10
V
V
© 2016 IXYS CORPORATION, All Rights Reserved
DS100505C(8/16)
IXXN110N65B4H1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
SOT-227B miniBLOC (IXXN)
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
30
52
S
Cies
Coes
Cres
3650
470
80
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg
183
32
nC
nC
nC
Qge
Qgc
IC = 110A, VGE = 15V, VCE = 0.5 • VCES
83
td(on)
tri
Eon
td(off)
tfi
26
40
ns
ns
mJ
ns
ns
Inductive load, TJ = 25°C
IC = 55A, VGE = 15V
2.20
146
43
VCE = 400V, RG = 2
Note 2
Eof
1.05
1.70 mJ
f
td(on)
tri
Eon
td(off)
tfi
25
40
ns
ns
Inductive load, TJ = 150°C
IC = 55A, VGE = 15V
3.00
140
110
2.16
mJ
ns
VCE = 400V, RG = 2
ns
Note 2
Eoff
mJ
RthJC
RthCS
0.20 °C/W
°C/W
0.05
Reverse Sonic Diode (FRD)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 100A, VGE = 0V, Note 1
1.7
1.8
2.3
V
V
TJ = 150C
TJ = 150C
IRM
trr
95
A
IF = 100A, VGE = 0V,
-diF/dt = 1500A/sVR = 300V
100
ns
RthJC
0.42 C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXXN110N65B4H1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
500
450
400
350
300
250
200
150
100
50
V
= 15V
V
= 15V
GE
GE
200
160
120
80
13V
12V
11V
14V
13V
12V
10V
9V
11V
10V
9V
8V
7V
40
8V
7V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
2
4
6
8
10
12
14
16
18
20
22
24
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15V
GE
12V
11V
200
160
120
80
V
= 15V
14V
13V
GE
I
= 220A
C
10V
9V
I
= 110A
C
40
8V
7V
I
= 55A
75
C
0
-50
-25
0
25
50
100
125
150
175
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
350
300
250
200
150
100
50
T
= 25ºC
J
T
= - 40ºC
25ºC
J
T
J
= 150ºC
I
= 220A
C
110A
55A
0
4
5
6
7
8
9
10
11
12
13
14
15
8
9
10
11
12
13
14
15
VGE - Volts
VGE - Volts
© 2016 IXYS CORPORATION, All Rights Reserved
IXXN110N65B4H1
Fig. 7. Transconductance
Fig. 8. Gate Charge
90
80
70
60
50
40
30
20
10
0
16
14
12
10
8
T
J
= - 40ºC
VCE = 325V
IC = 110A
I
G = 10mA
25ºC
150ºC
6
4
2
0
0
20
40
60
80
100
120
140
160
180
200
0
50
100
150
200
250
300
350
IC - Amperes
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
240
200
160
120
80
10,000
1,000
100
C
ies
C
oes
C
T
J
= 150ºC
res
40
R
G
= 2
Ω
= 1 MHz
5
f
dv / dt < 10V / ns
10
0
0
10
15
20
25
30
35
40
100
200
300
400
500
600
700
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient thermal Impedance (IGBT)
aaaa
0.4
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXN110N65B4H1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
6
5
4
3
2
1
0
12
10
8
7
6
5
4
3
2
1
0
14
12
10
8
E
R
E
E
E
off
on
off
on
= 2
V
= 15V
Ω ,
G
GE
T = 150ºC , V = 15V
J
GE
V
= 400V
I = 110A
C
CE
V
= 400V
CE
T = 150ºC
J
6
6
T = 25ºC
J
4
4
I
= 55A
12
C
2
2
0
0
50
55
60
65
70
75
80
85
90
95
100 105 110
2
4
6
8
10
14
16
IC - Amperes
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
6
5
4
3
2
1
0
12
10
8
180
160
140
120
100
80
500
450
400
350
300
250
200
150
100
50
E
R
E
t f i
td(off)
off
on
= 2
VGE = 15V
Ω ,
G
T = 150ºC, V = 15V
J GE
VCE = 400V
V
= 400V
CE
IC = 110A
I
= 110A
C
6
I
= 55A
C
60
4
40
2
IC = 55A
20
0
0
2
3
4
5
6
7
8
9
10 11 12 13 14 15
25
50
75
100
125
150
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
160
140
120
100
80
240
220
200
180
160
140
120
100
80
140
120
100
80
220
t f i
td(off)
t f i
td(off)
R
G
= 2 , V = 15V
Ω
200
180
160
140
120
100
GE
R
G
= 2 , V = 15V
Ω
GE
V
= 400V
CE
V
= 400V
CE
T
= 150ºC
= 25ºC
J
I
= 55A, 110A
C
60
60
40
T
J
40
20
0
20
25
50
75
100
125
150
50
55
60
65
70
75
80
85
90
95 100 105 110
IC - Amperes
TJ - Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved
IXXN110N65B4H1
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
200
180
160
140
120
100
80
100
90
80
70
60
50
40
30
20
10
180
160
140
120
100
80
42
39
36
33
30
27
24
21
18
15
t r i
td(on)
t r i
td(on)
R
G
= 2 , V = 15V
Ω
T = 150ºC, V = 15V
GE
J
GE
V
= 400V
V
= 400V
CE
CE
I
= 110A
C
T = 25ºC
J
T = 150ºC
J
I
= 55A
60
C
60
40
40
20
20
0
2
3
4
5
6
7
8
9
10 11 12 13 14 15
50
55
60
65
70
75
80
85
90
95 100 105 110
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
200
160
120
80
60
50
40
30
20
10
t r i
td(on)
R
G
= 2 , V = 15V
Ω
GE
V
= 400V
CE
I
= 110A
C
I
= 55A
C
40
0
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXH_110N65B4(E8-RZ43) 8-24-16
IXXN110N65B4H1
Fig. 22. Typ. Reverse Recovery Charge Qrr vs. -diF/dt
Fig. 21. Typ. Forward characteristics
20
16
12
8
200
175
150
125
100
75
T
= 150ºC
= 300V
VJ
V
R
I
F
= 200A
T
VJ
= 25ºC
T
VJ
= 150ºC
100A
50A
50
4
25
0
0
0
0.5
1
1.5
2
2.5
3
1000
1200
1400
1600
1800
2000
VF - [V]
-diF/ dt [A/µs]
Fig. 24. Typ. Recovery Time trr vs. -diF/dt
Fig. 23. Typ. Peak Reverse Current IRM vs. -diF/dt
140
120
100
80
350
300
250
200
150
100
50
I
F
= 200A
TVJ = 150ºC
R = 300V
TVJ = 150ºC
VR = 300V
V
100A
50A
I
F
= 200A
100A
50A
60
40
1000
1200
1400
1600
1800
2000
1000
1200
1400
1600
1800
2000
diF/dt [A/µs]
-diF/dt [A/µs]
Fig. 26. Maximum Transient Thermal Impedance ( Diode)
Fig. 25. Typ. Recovery Energy Erec vs. -diF/dt
1
5
TVJ = 150ºC
R = 300V
I
F
= 200A
V
4
3
2
1
0
0.1
100A
0.01
50A
0.001
1000
1200
1400
1600
1800
2000
0.0001
0.001
0.01
0.1
1
10
-diF/dt [A/µs]
Pulse Width [s]
© 2016 IXYS CORPORATION, All Rights Reserved
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