IXXK100N75B4H1 [LITTELFUSE]
Insulated Gate Bipolar Transistor,;
| 型号： | IXXK100N75B4H1 |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总8页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
XPTTM 750V IGBT
GenX4TM w/Diode
IXXX100N75B4H1
IXXK100N75B4H1
VCES = 750V
IC110 = 100A
VCE(sat) 2.10V
tfi(typ) = 110ns
Extreme Light Punch Through
IGBT for 10-30kHz Switching
PLUS247
(IXXX)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
750
750
V
V
TJ = 25°C to 175°C, RGE = 1M
G
C
VGES
VGEM
Continuous
Transient
±20
±30
V
V
Tab
E
TO-264
(IXXK)
IC25
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
240
160
100
120
A
A
A
A
ILRMS
IC110
IF110
TC = 110°C
ICM
TC = 25°C, 1ms
580
A
G
C
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
I
= 200
A
VCCEM VCES
Tab
E
TSC
VGE = 15V, TJ = 150°C,
(SCSOA)
RG = 20, VCE = 400V, Non-Repetitive
10
μs
G = Gate
C
= Collector
E = Emitter
Tab = Collector
PC
TC = 25°C
880
W
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
Features
-55 ... +175
Optimized for 10-30kHz Switching
Square RBSOA
High Current Handling Capability
International Standard Packages
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in
N/lb
20..120 /4.5..27
Weight
PLUS247
TO-264
6
10
g
g
Advantages
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
750
4.0
Typ.
Max.
Applications
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
6.5
25 μA
mA
±100 nA
TJ = 125°C
5
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
TJ = 150°C
1.74
2.07
2.10
V
V
High Frequency Power Inverters
© 2018 IXYS CORPORATION, All Rights Reserved
DS100945A(10/18)
IXXX100N75B4H1
IXXK100N75B4H1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
PLUS247TM Outline
Min.
Typ.
Max.
A
E1
E
Q
A2
gfs
IC = 60A, VCE = 10V, Note 1
32
54
S
D2
R
D1
Cies
Coes
Cres
4420
415
98
pF
pF
pF
D
L
VCE = 25V, VGE = 0V, f = 1MHz
4
1
2
3
L1
Qg(on)
Qge
Qgc
165
43
nC
nC
nC
IC = 100A, VGE = 15V, VCE = 0.5 • VCES
62
b
A1
e
3 PLCS
C
2 PLCS
b2 2 PLCS
b4
td(on)
tri
Eon
td(off)
tfi
27
44
ns
ns
Terminals: 1 - Gate
Inductive load, TJ = 25°C
2,4 - Collector
3 - Emitter
IC = 50A, VGE = 15V
2.75
155
110
1.75
mJ
ns
VCE = 400V, RG = 2
ns
Note 2
Eoff
mJ
td(on)
tri
Eon
td(off)
tfi
24
43
ns
ns
Inductive load, TJ = 150°C
IC = 50A, VGE = 15V
4.00
190
236
3.00
mJ
ns
VCE = 400V, RG = 2
ns
Note 2
Eoff
mJ
RthJC
RthCS
0.17 °C/W
°C/W
0.15
TO-264 Outline
A
E
Reverse Diode (FRD)
Q
S
R
D
Q1
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
R1
1
2
3
L1
VF
IF = 100A, VGE = 0V, Note 1
1.5
1.7
2.2
V
V
TJ = 150°C
L
c
IRM
trr
37
A
IF = 100A, VGE = 0V, TJ = 150°C
-diF/dt = 500A/sVR = 400V
b
A1
b1
b2
e
x2
245
ns
0P
4
RthJC
0.20 °C/W
Terminals:
1
= Gate
2,4 = Collector
= Emitter
3
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXXX100N75B4H1
IXXK100N75B4H1
Fig. 1. Output Characteristics @ TJ = 25oC
Fig. 2. Extended Output Characteristics @ TJ = 25oC
200
180
160
140
120
100
80
500
450
400
350
300
250
200
150
100
50
V
= 15V
GE
V
= 15V
GE
13V
12V
14V
13V
12V
11V
10V
11V
10V
9V
9V
8V
60
40
8V
7V
7V
20
0
0
0
0.5
1
1.5
2
2.5
3
0
-50
4
2
4
6
8
10
12
14
16
18
20
175
13
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150oC
200
180
160
140
120
100
80
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15V
GE
V
= 15V
13V
12V
GE
11V
I
= 200A
C
10V
9V
I
= 100A
C
60
8V
40
7V
6V
20
I
= 50A
C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
300
250
200
150
100
50
= 25oC
T
J
= - 40oC
25oC
T
J
T
J
= 150oC
I
= 200A
C
100A
50A
0
5
6
7
8
9
10
11
12
7
8
9
10
11
12
13
14
15
VGE - Volts
VGE - Volts
© 2018 IXYS CORPORATION, All Rights Reserved
IXXX100N75B4H1
IXXK100N75B4H1
Fig. 7. Transconductance
Fig. 8. Gate Charge
80
70
60
50
40
30
20
10
0
16
14
12
10
8
T
J
= - 40oC
VCE = 375V
IC = 100A
I
G = 10mA
25oC
150oC
6
4
2
0
0
20
40
60
80
100
120
140
160
180
0
40
80
120
160
200
240
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
10,000
1,000
100
240
200
160
120
80
C
ies
C
oes
res
C
T
J
= 150oC
40
R
= 2
Ω
G
= 1 MHz
f
dv / dt < 10V / ns
10
0
0
5
10
15
20
25
30
35
100
200
400
500
600
700
800
40300
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
aaa
0.3
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXX100N75B4H1
IXXK100N75B4H1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
9
8
7
6
5
4
3
2
1
0
10
9
11
10
9
12
11
10
9
E
E
E
R
E
off
on
off
on
T = 150oC , V = 15V
= 2
V
Ω
GE
= 15V
J
GE
G
8
V
= 400V
V
= 400V
CE
CE
8
7
I
= 100A
C
7
8
6
T = 150oC
J
6
7
5
5
6
4
4
5
3
3
4
T = 25oC
J
I
= 50A
C
2
2
3
1
2
1
2
3
4
5
6
7
8
9
10
11 12
13
14
15
50
55
60
65
70
75
80
85
90
95
100
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
10
9
8
7
6
5
4
3
2
1
0
11
10
9
270
260
250
240
230
220
210
200
190
420
380
340
300
260
220
180
140
100
E
R
E
off
on
t f i
td(off)
T = 150oC, V = 15V
= 2
V
Ω
GE = 15V
G
J
GE
VCE = 400V
V
= 400V
CE
IC = 100A
8
7
6
I
= 50A
C
5
I
= 100A
C
4
3
IC = 50A
2
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
25
50
75
100
125
150
RG - Ohms
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
240
220
200
180
160
140
120
100
320
280
240
200
160
120
80
220
200
180
160
140
120
100
t f i
td(off)
t f i
td(off)
280
240
200
160
120
80
R
G
= 2 , V = 15V
Ω
R
G
= 2 , V = 15V
Ω
GE
GE
V
= 400V
V
= 400V
CE
CE
I
= 50A
C
T = 150oC
J
I
= 100A
C
T = 25oC
J
40
40
50
55
60
65
70
75
80
85
90
95
100
25
50
75
100
125
150
IC - Amperes
TJ - Degrees Centigrade
© 2018 IXYS CORPORATION, All Rights Reserved
IXXX100N75B4H1
IXXK100N75B4H1
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
140
120
100
80
34
32
30
28
26
24
22
220
200
180
160
140
120
100
80
70
65
60
55
50
45
40
35
30
25
20
t r i
td(on)
t r i
td(on)
T = 150oC, V = 15V
R
G
= 2 , V = 15V
Ω
GE
J
GE
T = 25oC
J
V
= 400V
CE
V
= 400V
CE
T = 150oC
J
I
= 100A
C
60
I
= 50A
C
60
40
40
20
20
2
3
4
5
6
7
8
9
10 11 12 13 14 15
50
55
60
65
70
75
80
85
90
95
100
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
180
160
140
120
100
80
38
36
34
32
30
28
26
24
22
20
t r i
td(on)
R
G
= 2 , V = 15V
Ω
GE
V
= 400V
CE
I
= 100A
C
60
40
I
= 50A
75
C
20
0
25
50
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXX100N75B4H1
IXXK100N75B4H1
Fig. 21. Diode Forward Characteristics
Fig. 22. Reverse Recovery Charge vs. -diF/dt
200
180
160
140
120
100
80
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
T = 150oC
J
V
= 400V
R
I
F
= 100A
75A
T = 25oC
J
T = 150oC
J
50A
60
40
20
0
0
0.4
0.8
1.2
1.6
2
2.4
200
400
600
800
1000
1200
1400
1400
1
-diF/ dt (A/μs)
VF (V)
i
Fg. 24. Reverse Recovery Time vs. -diF/dt
Fig. 23. Reverse Recovery Current vs. -diF/dt
360
320
280
240
200
160
50
45
40
35
30
25
20
15
T = 150oC
T = 150oC
J
J
I
F
= 100A, 75A, 50A
V
= 400V
R
V
= 400V
R
I
F
= 100A
75A
50A
120
200
400
600
800
1000
1200
1400
200
400
600
800
1000
1200
diF/dt (A/μs)
-diF/dt (A/μs)
I
Fig. 25. Dynamic Parameters QRR, RR vs.
Fig. 26. Maximum Transient Thermal Impedance (Diode)
Junction Temperature
aaa
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.3
0.1
V
= 400V
R
I
= 100A
F
K
I
RR
F
-diF /dt = 500A/μs
K
Q
RR
F
0.01
20
40
60
80
100
120
140
160
0.00001
0.0001
0.001
0.01
0.1
TJ (ºC)
Pulse Width - Second
© 2018 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXH_100N75B4(E8-RY46) 10-08-18-A
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
相关型号：
IXXK300N60B3
Insulated Gate Bipolar Transistor, 550A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
IXYS
IXXP50N60B3
Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
IXYS
IXXR100N60B3H1
Insulated Gate Bipolar Transistor, 145A I(C), 600V V(BR)CES, N-Channel, PLASTIC, ISOPLUS247, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明