IXXK200N65B4 [IXYS]
Insulated Gate Bipolar Transistor, 370A I(C), 650V V(BR)CES, N-Channel,;
| 型号： | IXXK200N65B4 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 370A I(C), 650V V(BR)CES, N-Channel, 栅 |
| 文件： | 总6页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
XPTTM 650V IGBT
GenX4TM
IXXK200N65B4
IXXX200N65B4
VCES = 650V
IC110 = 200A
VCE(sat) 1.7V
tfi(typ) = 80ns
Extreme Light Punch Through
IGBT for 10-30kHz Switching
TO-264 (IXXK)
G
C
E
Symbol
Test Conditions
Maximum Ratings
Tab
VCES
VCGR
TJ = 25°C to 175°C
650
650
V
V
TJ = 25°C to 175°C, RGE = 1M
PLUS247 (IXXX)
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
ILRMS
IC110
TC = 25°C (Chip Capability)
Lead Current Limit
TC = 110°C
480
160
200
A
A
A
G
C
Tab
ICM
TC = 25°C, 1ms
1100
A
E
SSOA
VGE = 15V, TVJ = 150°C, RG = 1
ICM = 400
A
(RBSOA)
Clamped Inductive Load
@VCE VCES
G = Gate
C = Collector
E
= Emitter
Tab = Collector
tsc
VGE = 15V, VCE = 360V, TJ = 150°C
10
μs
(SCSOA)
RG = 10, Non Repetitive
PC
TC = 25°C
1630
W
Features
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
Optimized for 10-30kHz Switching
Square RBSOA
-55 ... +175
Short Circuit Capability
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
International Standard Packages
High Current Handling Capability
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in
N/lb
20..120 /4.5..27
Advantages
Weight
TO-264
PLUS247
10
6
g
g
High Power Density
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
650
4.0
Typ.
Max.
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 4mA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
6.5
25 μA
mA
±200 nA
TJ = 150°C
2
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 160A, VGE = 15V, Note 1
TJ = 150°C
1.4
1.6
1.7
V
V
© 2014 IXYS CORPORATION, All Rights Reserved
DS100518C(6/14)
IXXK200N65B4
IXXX200N65B4
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-264 Outline
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
54
90
S
Cies
Coes
Cres
11.25
670
nF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
390
Qg(on)
Qge
Qgc
553
110
253
nC
nC
nC
IC = 200A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
62
76
ns
ns
mJ
ns
ns
Inductive load, TJ = 25°C
IC = 100A, VGE = 15V
VCE = 400V, RG = 1
4.40
245
80
Terminals:
1
= Gate
2,4 = Collector
Emitter
3
=
Note 2
Eoff
2.20
3.50 mJ
td(on)
tri
Eon
td(off)
tfi
54
65
ns
ns
Inductive load, TJ = 150°C
IC = 100A, VGE = 15V
5.55
236
110
2.54
mJ
ns
VCE = 400V, RG = 1
ns
Note 2
Eoff
mJ
RthJC
RthCS
0.092 °C/W
°C/W
0.15
PLUS247TM Outline
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Terminals: 1 - Gate
2,4 - Collector
3 - Emitter
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXXK200N65B4
IXXX200N65B4
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
300
250
200
150
100
50
350
300
250
200
150
100
50
V
= 15V
V
= 15V
GE
GE
10V
9V
13V
12V
11V
11V
10V
9V
8V
8V
7V
7V
3
0
0
0
0.5
1
1.5
2
2.5
0
1
2
4
5
6
7
8
9
10
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
300
250
200
150
100
50
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15V
GE
V
= 15V
GE
13V
12V
11V
I
= 300A
C
10V
9V
I
= 200A
C
I
8V
7V
= 100A
75
C
0
-50
-25
0
25
50
100
125
150
175
0
0.5
1
1.5
2
2.5
3
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
4.0
3.5
3.0
2.5
2.0
1.5
1.0
200
180
160
140
120
100
80
T
J
= 25ºC
T
J
= - 40ºC
25ºC
T
J
= 150ºC
I
= 300A
C
60
200A
40
20
100A
10
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
7
8
9
11
12
13
14
15
VGE - Volts
VGE - Volts
© 2014 IXYS CORPORATION, All Rights Reserved
IXXK200N65B4
IXXX200N65B4
Fig. 7. Transconductance
Fig. 8. Gate Charge
160
140
120
100
80
16
14
12
10
8
T
= - 40ºC
J
VCE = 325V
IC = 200A
IG = 10mA
25ºC
150ºC
60
6
4
40
20
2
0
0
0
50
100
150
200
250
300
350
400
450
500
550
0
20
40
60
80
100
120
140
160
180
200
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
450
400
350
300
250
200
150
100
50
100,000
10,000
1,000
= 1 MHz
f
C
ies
C
oes
res
T
= 150ºC
J
R
= 1
Ω
dv / dt < 10V / ns
G
C
100
0
0
5
10
15
20
25
30
35
40
100
200
300
400
500
600
700
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
aaaa
0.2
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK200N65B4
IXXX200N65B4
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
3.0
2.5
2.0
1.5
1.0
0.5
6
5
4
3
2
1
7
6
5
4
3
2
1
13
11
9
E
R
E
on - - - -
E
E
on - - - -
off
off
= 1
V
= 15V
GE
Ω ,
G
T = 150ºC , V = 15V
J
GE
V
= 400V
CE
V
= 400V
CE
T = 150ºC
J
7
I
= 100A
C
T = 25ºC
J
5
I
= 50A
C
3
1
50
55
60
65
70
75
80
85
90
95
100
1
2
3
4
5
6
7
8
9
10
RG - Ohms
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
240
220
200
180
160
140
120
100
80
900
800
700
600
500
400
300
200
100
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
7
6
5
4
3
2
1
0
E
E
on - - - -
t f i
t
d(off) - - - -
off
= 1
R
VGE = 15V
Ω ,
G
T = 150ºC, V = 15V
J
GE
VCE = 400V
V
= 400V
CE
IC = 100A
I
= 50A
C
I
= 100A
C
IC = 50A
1
2
3
4
5
6
7
8
9
10
25
50
75
100
125
150
RG - Ohms
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
220
200
180
160
140
120
100
80
280
275
270
265
260
255
250
245
240
235
230
180
160
140
120
100
80
320
300
280
260
240
220
200
t f i
t
d(off) - - - -
t f i
t
d(off) - - - -
R
G
= 1 , V = 15V
R
G
= 1 , V = 15V
Ω
Ω
GE
GE
T
J
= 150ºC
V
= 400V
V
= 400V
CE
CE
I
= 50A
C
T
J
= 25ºC
I
= 100A
C
60
40
20
60
50
55
60
65
70
75
80
85
90
95
100
25
50
75
100
125
150
IC - Amperes
TJ - Degrees Centigrade
© 2014 IXYS CORPORATION, All Rights Reserved
IXXK200N65B4
IXXX200N65B4
Fig. 19. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
td(on)
- - - -
100
90
80
70
60
50
40
30
20
10
0
64
62
60
58
56
54
52
50
48
46
44
200
180
160
140
120
100
80
130
120
110
100
90
t r i
t r i
t
d(on) - - - -
R
G
= 1 , V = 15V
Ω
GE
T = 150ºC, V = 15V
J
GE
V
= 400V
T = 25ºC
J
CE
V
= 400V
CE
I
= 100A
C
T = 150ºC
J
80
70
I
= 50A
C
60
60
40
50
20
40
0
30
50
55
60
65
70
75
80
85
90
95
100
1
2
3
4
5
6
7
8
9
10
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
130
110
90
70
65
60
55
50
45
40
t r i
t
d(on) - - - -
R
G
= 1 , V = 15V
Ω
GE
V
= 400V
CE
I
= 100A
C
70
50
I
= 50A
C
30
10
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXX_200N65B4(F9)3-04-14-A
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