IXXK300N60B3 [IXYS]
Insulated Gate Bipolar Transistor, 550A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN;
| 型号： | IXXK300N60B3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 550A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN 局域网 栅 功率控制 晶体管 |
| 文件： | 总6页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
XPTTM 600V IGBTs
GenX3TM
IXXK300N60B3
IXXX300N60B3
VCES = 600V
IC110 = 300A
VCE(sat) ≤ 1.6V
tfi(typ) = 95ns
Extreme Light Punch Through
IGBT for 10-30kHz Switching
TO-264 (IXXK)
Symbol
Test Conditions
Maximum Ratings
G
C
E
VCES
VCGR
TJ = 25°C to 175°C
600
600
V
V
TJ = 25°C to 175°C, RGE = 1MΩ
Tab
VGES
VGEM
Continuous
Transient
±20
±30
V
V
PLUS247 (IXXX)
IC25
ILRMS
IC110
TC= 25°C (Chip Capability)
Leads Current Limit
TC = 110°C (Chip Capability)
550
160
300
A
A
A
ICM
TC = 25°C, 1ms
1140
A
G
IA
EAS
TC = 25°C
TC = 25°C
100
500
A
C
Tab
E
mJ
SSOA
VGE = 15V, TVJ = 150°C, RG = 1Ω
Clamped Inductive Load
ICM = 600
A
μs
W
G = Gate
C = Collector
E
= Emitter
(RBSOA)
@VCE ≤ VCES
Tab = Collector
tsc
VGE= 15V, VCE = 360V, TJ = 150°C
10
(SCSOA)
RG = 10Ω, Non Repetitive
PC
TC = 25°C
2300
Features
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
z
Optimized for 10-30kHz Switching
Square RBSOA
International Standard Packages
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
z
z
z
z
z
-55 ... +175
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in.
N/lb.
20..120 /4.5..27
Advantages
Weight
TO-264
PLUS247
10
6
g
g
z
High Power Density
Low Gate Drive Requirement
z
Symbol
Test Conditions
Characteristic Values
Applications
(TJ = 25°C, Unless Otherwise Specified)
Min.
600
3.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
z
5.5
z
25 μA
2.5 mA
z
z
TJ = 150°C
z
IGES
VCE = 0V, VGE = ±20V
±200 nA
z
z
Lamp Ballasts
VCE(sat)
IC = 100A, VGE = 15V, Note 1
TJ = 150°C
1.3
1.4
1.6
V
V
© 2012 IXYS CORPORATION, All Rights Reserved
DS100503(10/12)
IXXK300N60B3
IXXX300N60B3
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-264 Outline
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
30
50
S
Cies
Coes
Cres
13.3
757
246
nF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
Qgc
460
137
196
nC
nC
nC
IC = 300A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
50
87
ns
ns
mJ
ns
ns
Inductive load, TJ = 25°C
IC = 100A, VGE = 15V
3.45
190
95
Terminals:
1
= Gate
2,4 = Collector
Emitter
VCE = 400V, RG = 1Ω
3
=
Note 2
Eof
2.86
4.40 mJ
f
td(on)
tri
50
87
ns
ns
Inductive load, TJ = 150°C
IC = 100A, VGE = 15V
Eon
td(off)
tfi
4.47
230
200
3.70
mJ
ns
VCE = 400V, RG = 1Ω
ns
Note 2
Eoff
mJ
RthJC
RthCS
0.065 °C/W
°C/W
0.15
PLUS247TM Outline
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXXK300N60B3
IXXX300N60B3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
300
250
200
150
100
50
350
300
250
200
150
100
50
VGE = 15V
13V
12V
11V
VGE = 15V
13V
12V
11V
10V
10V
9V
9V
8V
8V
7V
0
0
7V
0
0.4
0.8
1.2
1.6
2
2.4
2.8
0
1
2
3
4
5
6
7
8
9
10
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
300
250
200
150
100
50
1.6
1.4
1.2
1.0
0.8
0.6
VGE = 15V
13V
VGE = 15V
12V
11V
10V
I C = 300A
I C = 200A
9V
I C = 100A
8V
7V
0
0
0.5
1
1.5
2
2.5
3
3.5
-50
-25
0
25
50
75
100
125
150
175
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
200
180
160
140
120
100
80
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TJ = 25ºC
TJ = 150ºC
25ºC
I C = 300A
- 40ºC
60
200A
40
20
100A
11
0
4
5
6
7
8
9
10
11
9
10
12
13
14
15
VGE - Volts
VGE - Volts
© 2012 IXYS CORPORATION, All Rights Reserved
IXXK300N60B3
IXXX300N60B3
Fig. 7. Transconductance
Fig. 8. Gate Charge
120
100
80
60
40
20
0
16
14
12
10
8
TJ = - 40ºC, 25ºC, 150ºC
VCE = 300V
I C = 300A
I G = 10mA
6
4
2
0
0
50
100
150
200
250
300
350
400
450
500
0
20
40
60
80
100
120
140
160
180
200
IC - Amperes
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
700
600
500
400
300
200
100
0
100,000
10,000
1,000
100
= 1 MHz
f
C
ies
C
oes
TJ = 150ºC
RG = 1
Ω
dv / dt < 10V / ns
C
res
0
5
10
15
20
25
30
35
40
100
200
300
400
500
600
VCE - Volts
VCE - Volts
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Maximum Transient Thermal Impedance
10,000
0.1
VCE(sat) Limit
1,000
100
10
25µs
External Lead Current Limit
100µs
0.01
1ms
TJ = 175ºC
10ms
100ms
1
TC = 25ºC
DC
Single Pulse
0
0.001
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
VCE - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK300N60B3
IXXX300N60B3
Fig. 14. Inductive Switching Energy Loss vs.
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
Collector Current
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
7
6
5
4
3
2
1
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
8
6
4
2
0
E
E
on - - - -
VGE = 15V
E
E
on - - - -
off
RG = 1
off
Ω ,
TJ = 150ºC , VGE = 15V
VCE = 400V
I C = 100A
VCE = 400V
TJ = 150ºC
TJ = 25ºC
I C = 50A
50
55
60
65
70
75
80
85
90
95
100
1
2
3
4
5
6
7
8
9
10
RG - Ohms
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
380
340
300
260
220
180
140
100
800
700
600
500
400
300
200
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
7
6
5
4
3
2
1
0
E
E
t f i
t
d(off) - - - -
on - - - -
off
RG = 1
TJ = 150ºC, VGE = 15V
VGE = 15V
Ω ,
VCE = 400V
VCE = 400V
I C = 100A
I C = 50A
I C = 100A
I C = 50A
25
50
75
100
125
150
1
2
3
4
5
6
7
8
9
10
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
350
300
250
200
150
100
50
400
350
300
250
200
150
100
300
250
200
150
100
50
360
320
280
240
200
160
tf i
td(on)
- - - -
t f i
td(off)
- - - -
RG = 1
,
VGE = 15V
Ω
RG = 1
,
VGE = 15V
Ω
VCE = 400V
VCE = 400V
TJ = 150ºC
I C = 50A
TJ = 25ºC
I C = 100A
50
55
60
65
70
75
80
85
90
95
100
25
50
75
100
125
150
IC - Amperes
TJ - Degrees Centigrade
© 2012 IXYS CORPORATION, All Rights Reserved
IXXK300N60B3
IXXX300N60B3
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
120
100
80
60
40
20
0
56
54
52
50
48
46
44
160
140
120
100
80
120
110
100
90
tr i
td(on) - - - -
tr i
td(on) - - - -
RG = 1
, VGE = 15V
Ω
TJ = 150ºC, VGE = 15V
VCE = 400V
VCE = 400V
I C = 100A
80
TJ = 25ºC
60
70
I C = 50A
TJ = 150ºC
40
60
20
50
0
40
50
55
60
65
70
75
80
85
90
95
100
1
2
3
4
5
6
7
8
9
10
IC - Amperes
RG - Ohms
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
160
140
120
100
80
53
52
51
50
49
48
47
46
45
tr i
td(on) - - - -
, VGE = 15V
RG = 1
Ω
VCE = 400V
I C = 100A
60
40
I C = 50A
20
0
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXX_300N60B3(9D)10-10-12
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