IXXKX100N60C3H1 [IXYS]
Extreme Light Punch Through IGBT for 20-60kHz Switching; 极端的光透过， IGBT为20-60kHz切换
| 型号： | IXXKX100N60C3H1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Extreme Light Punch Through IGBT for 20-60kHz Switching |
| 文件： | 总7页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
XPTTM 600V
IXXK100N60C3H1
IXXX100N60C3H1
VCES = 600V
IC90 = 100A
VCE(sat) ≤ 2.20V
tfi(typ) = 75ns
GenX3TM w/ Diode
Extreme Light Punch Through
IGBT for 20-60kHz Switching
TO-264 (IXXK)
Symbol
Test Conditions
Maximum Ratings
G
C
E
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C, RGE = 1MΩ
Tab
VGES
VGEM
Continuous
Transient
±20
±30
V
V
PLUS247 (IXXX)
IC25
ILRMS
IC90
TC= 25°C ( Chip Capability )
Terminal Current Limit
TC = 90°C
170
120
100
65
A
A
A
A
IF110
TC = 110°C
ICM
TC = 25°C, 1ms
340
A
G
C
Tab
IA
EAS
TC = 25°C
TC = 25°C
50
A
E
600
mJ
G = Gate
C = Collector
E
= Emitter
SSOA
VGE = 15V, TVJ = 150°C, RG = 2Ω
Clamped Inductive Load
ICM = 200
A
μs
W
Tab = Collector
(RBSOA)
@VCE ≤ VCES
tsc
VGE= 15V, VCE = 360V, TJ = 150°C
10
(SCSOA)
RG = 10Ω, Non Repetitive
Features
PC
TC = 25°C
695
z Optimized for 20-60kHz Switching
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
z
Square RBSOA
Avalanche Rated
Short Circuit Capability
Anti-Parallel Ultra Fast Diode
z
z
-55 ... +150
z
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
z
High Current Handling Capability
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in.
N/lb.
20..120 /4.5..27
Advantages
Weight
TO-264
PLUS247
10
6
g
g
z
High Power Density
Low Gate Drive Requirement
z
Symbol
Test Conditions
Characteristic Values
Applications
(TJ = 25°C, Unless Otherwise Specified)
Min.
600
3.0
Typ.
Max.
z
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
z
5.5
z
z
50 μA
4 mA
z
TJ = 125°C
TJ = 150°C
z
z
IGES
VCE = 0V, VGE = ±20V
±100 nA
z
Lamp Ballasts
VCE(sat)
IC = 70A, VGE = 15V, Note 1
1.68
1.97
2.20
V
V
© 2011 IXYS CORPORATION, All Rights Reserved
DS100283A(01/11)
IXXK100N60C3H1
IXXX100N60C3H1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-264 Outline
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
22
40
S
Cies
Coes
Cres
4810
455
80
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
Qgc
150
34
nC
nC
nC
IC = 70A, VGE = 15V, VCE = 0.5 • VCES
60
td(on)
tri
Eon
td(off)
tfi
30
70
ns
ns
mJ
ns
ns
Inductive load, TJ = 25°C
IC = 70A, VGE = 15V
2.00
90
Terminals:
1
= Gate
2,4 = Collector
Emitter
VCE = 360V, RG = 2Ω
3
=
75
Note 2
Eof
0.95
1.40 mJ
f
td(on)
tri
30
65
ns
ns
Inductive load, TJ = 150°C
IC = 70A, VGE = 15V
Eon
td(off)
tfi
3.00
105
115
1.40
mJ
ns
VCE = 360V, RG = 2Ω
ns
Note 2
Eoff
mJ
RthJC
RthCS
0.18 °C/W
°C/W
0.15
PLUS247TM Outline
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 60A, VGE = 0V, Note 1
1.6
1.4
2.0
1.8
V
V
TJ = 150°C
TJ = 100°C
IRM
trr
8.3
A
IF = 60A, VGE = 0V,
Terminals: 1 - Gate
2 - Collector
-diF/dt = 200A/μs, VR = 300V
140
ns
3 - Emitter
RthJC
0.30 °C/W
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
e
L
L1
5.45 BSC
19.81 20.32
3.81
.215 BSC
.780 .800
.150 .170
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXXK100N60C3H1
IXXX100N60C3H1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
350
300
250
200
150
100
50
140
120
100
80
VGE = 15V
14V
VGE = 15V
13V
13V
12V
11V
12V
10V
9V
11V
60
10V
9V
40
8V
20
8V
7V
7V
6V
0
0
0
0
8
0.5
1
1.5
2
2.5
3
3.5
0
2
4
6
8
10
12
14
16
18
20
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
140
120
100
80
VGE = 15V
13V
VGE = 15V
12V
11V
I C = 140A
I C = 70A
I C = 35A
10V
9V
60
40
8V
20
7V
6V
0
-50
-25
0
25
50
75
100
125
150
175
0.5
1
1.5
2
2.5
3
3.5
4
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
180
160
140
120
100
80
TJ = 25ºC
TJ = 150ºC
I C = 140A
25ºC
- 40ºC
60
70A
40
20
35A
0
9
10
11
12
13
14
15
4
5
6
7
8
9
10
11
VGE - Volts
VGE - Volts
© 2011 IXYS CORPORATION, All Rights Reserved
IXXK100N60C3H1
IXXX100N60C3H1
Fig. 8. Gate Charge
Fig. 7. Transconductance
80
70
60
50
40
30
20
10
0
16
14
12
10
8
TJ = - 40ºC
VCE = 300V
I C = 70A
I G = 10mA
25ºC
150ºC
6
4
2
0
0
0
1
20
40
60
80
100
120
140
160
180
200
220
0
20
40
60
80
100
120
140
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
220
200
180
160
140
120
100
80
10,000
1,000
100
C
ies
C
oes
60
TJ = 150ºC
RG = 2
C
res
40
Ω
dv / dt < 10V / ns
= 1 MHz
5
f
20
0
10
100
150
200
250
300
350
400
450
500
550
600
650
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Forward-Bias Safe Operating Area
Fig. 12. Maximum Transient Thermal Impedance
1000
100
10
1
VCE(sat) Limit
0.1
25µs
100µs
1ms
0.01
0.001
1
TJ = 150ºC
10ms
TC = 25ºC
DC
Single Pulse
0.1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK100N60C3H1
IXXX100N60C3H1
Fig. 14. Inductive Switching Energy Loss vs.
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
Collector Current
2.5
2
5
4
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
7
6
5
4
3
2
E
E
on - - - -
VGE = 15V
off
RG = 2
E
E
on - - - -
off
TJ = 150ºC , VGE = 15V
Ω ,
VCE = 360V
VCE = 360V
TJ = 150ºC
I C = 100A
1.5
1
TJ = 25ºC
0.5
0
I C = 50A
2
3
4
5
6
7
8
9
10
11
12
13
14
15
20
30
40
50
60
70
80
90
100
RG - Ohms
IC - Amperes
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
180
160
140
120
100
80
280
260
240
220
200
180
160
140
120
100
80
2.5
2.0
1.5
1.0
0.5
5
E
E
on - - - -
VGE = 15V
t f i
td(off)
- - - -
off
RG = 2
Ω ,
TJ = 150ºC, VGE = 15V
I C = 100A
VCE = 360V
VCE = 360V
4
3
2
1
I C = 50A
I C = 50A
I C = 100A
25
50
75
100
125
150
2
3
4
5
6
7
8
9
10 11
12 13
14 15
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
160
150
140
130
120
110
100
90
160
140
120
100
80
200
175
150
125
100
75
180
160
140
120
100
80
t f i
td(on)
- - - -
t f i
td(off)
- - - -
RG = 2
,
VGE = 15V
Ω
RG = 2
,
VGE = 15V
Ω
VCE = 360V
VCE = 360V
TJ = 150ºC
I C = 100A
TJ = 25ºC
I C = 50A
80
70
60
60
50
60
25
50
75
100
125
150
20
30
40
50
60
IC - Amperes
70
80
90
100
TJ - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXXK100N60C3H1
IXXX100N60C3H1
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
140
120
100
80
38
36
34
32
30
28
26
24
180
160
140
120
100
80
84
76
68
60
52
44
36
28
20
tr i
td(on)
- - - -
tr i
td(on) - - - -
RG = 2
, VGE = 15V
Ω
TJ = 150ºC, VGE = 15V
VCE = 360V
VCE = 360V
TJ = 25ºC
I C = 100A
TJ = 150ºC
60
I C = 50A
40
60
20
40
0
20
20
30
40
50
60
70
80
90
100
2
3
4
5
6
7
8
9
10
11
12
13
14
15
IC - Amperes
RG - Ohms
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
180
160
140
120
100
80
36
35
34
33
32
31
30
29
28
27
tr i
td(on) - - - -
RG = 2
, VGE = 15V
Ω
VCE = 360V
I C = 100A
60
I C = 50A
40
20
0
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK100N60C3H1
IXXX100N60C3H1
Fig. 23. Reverse Recovery Charge Qr
Versus -diF/dt
Fig. 24. Peak Reverse Current IRM
Versus -diF/dt
Fig. 22. Forward Current IF Versus VF
Fig. 25. Dynamic Parameters Qr, IRM
Versus TVJ
Fig. 26. Recovery Time trr Versus
-diF/dt
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width ]
Seconds
27.
Fig. 26 Maximum transient thermal impedance junction to case (for diode)
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXX_100N60C3(7D)9-30-10-A
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