IXXK100N60B3H1 [IXYS]
Extreme Light Punch Through IGBT for 10-30kHz Switching; 极端的光透过， IGBT为10-30kHz切换
| 型号： | IXXK100N60B3H1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Extreme Light Punch Through IGBT for 10-30kHz Switching |
| 文件： | 总7页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
XPTTM 600V
IXXK100N60B3H1
VCES = 600V
IC90 = 100A
VCE(sat) ≤ 1.80V
tfi(typ) = 150ns
GenX3TM w/ Diode
Extreme Light Punch Through
IGBT for 10-30kHz Switching
TO-264
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C, RGE = 1MΩ
G
C
E
VGES
VGEM
Continuous
Transient
±20
±30
V
V
Tab
IC25
ILRMS
IC90
TC= 25°C ( Chip Capability )
Terminal Current Limit
TC = 90°C
190
120
100
65
A
A
A
A
G = Gate
E
= Emitter
C = Collector
Tab = Collector
IF110
TC = 110°C
ICM
TC = 25°C, 1ms
370
A
IA
EAS
TC = 25°C
TC = 25°C
50
A
600
mJ
Features
SSOA
VGE = 15V, TVJ = 150°C, RG = 2Ω
Clamped Inductive Load
ICM = 200
A
μs
W
z Optimized for 10-30kHz Switching
(RBSOA)
@VCE ≤ VCES
z
Square RBSOA
Avalanche Rated
Short Circuit Capability
Anti-Parallel Ultra Fast Diode
High Current Handling Capability
International Standard Package
tsc
VGE= 15V, VCE = 360V, TJ = 150°C
10
z
z
(SCSOA)
RG = 10Ω, Non Repetitive
z
PC
TC = 25°C
695
z
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
z
-55 ... +150
Advantages
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
z
High Power Density
Low Gate Drive Requirement
z
Md
Mounting Torque
1.13/10
10
Nm/lb.in.
g
Weight
Applications
Symbol
Test Conditions
Characteristic Values
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
(TJ = 25°C, Unless Otherwise Specified)
Min.
600
3.0
Typ.
Max.
z
z
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
z
5.5
z
z
50 μA
4 mA
z
TJ = 125°C
TJ = 150°C
z
IGES
VCE = 0V, VGE = ±20V
±100 nA
VCE(sat)
IC = 70A, VGE = 15V, Note 1
1.50
1.77
1.80
V
V
© 2010 IXYS CORPORATION, All Rights Reserved
DS100285(12/10)
IXXK100N60B3H1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-264 (IXXK) Outline
Min.
Typ.
Max.
gfs
Cie
Coes
Cres
IC = 60A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
22
40
S
4860
475
83
pF
pF
pF
s
Qg
143
37
nC
nC
nC
Qge
Qgc
IC = 70A, VGE = 15V, VCE = 0.5 • VCES
60
td(on)
tri
Eon
td(off)
tfi
30
70
ns
ns
Inductive load, TJ = 25°C
IC = 70A, VGE = 15V
1.9
120
150
2.0
mJ
ns
Terminals:
1
= Gate
2,4 = Collector
Emitter
VCE = 360V, RG = 2Ω
3
=
ns
Note 2
Eof
2.8
mJ
f
td(on)
tri
Eon
td(off)
tfi
32
60
ns
ns
Inductive load, TJ = 150°C
IC = 70A, VGE = 15V
2.3
150
200
2.8
mJ
ns
VCE = 360V, RG = 2Ω
ns
Note 2
Eoff
mJ
RthJC
RthCS
0.18 °C/W
°C/W
0.15
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 60A, VGE = 0V, Note 1
1.6
1.4
2.0
1.8
V
V
TJ = 150°C
TJ = 100°C
IRM
trr
8.3
A
IF = 60A, VGE = 0V,
-diF/dt = 200A/μs, VR = 300V
140
ns
RthJC
0.30 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463 6,771,478 B2 7,071,537
7,005,734 B2 7,157,338B2
7,063,975 B2
IXXK100N60B3H1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
350
300
250
200
150
100
50
140
120
100
80
VGE = 15V
14V
VGE = 15V
13V
12V
13V
11V
12V
10V
9V
11V
60
10V
9V
40
8V
20
8V
7V
7V
6V
0
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.5
15
0
2
4
6
8
10
12
14
16
18
20
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
1.8
1.6
1.4
1.2
1.0
0.8
0.6
140
120
100
80
VGE = 15V
13V
VGE = 15V
11V
I C = 140A
12V
10V
I C = 70A
60
9V
8V
40
20
I C = 35A
7V
5V
0
-50
-25
0
25
50
75
100
125
150
175
0
0.5
1
1.5
2
2.5
3
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
180
160
140
120
100
80
TJ = 25ºC
TJ = 150ºC
25ºC
I C = 140A
- 40ºC
60
70A
40
20
35A
0
8
9
10
11
12
13
14
4
5
6
7
8
9
10
11
VGE - Volts
VGE - Volts
© 2010 IXYS CORPORATION, All Rights Reserved
IXXK100N60B3H1
Fig. 8. Gate Charge
Fig. 7. Transconductance
80
70
60
50
40
30
20
10
0
16
14
12
10
8
TJ = - 40ºC
VCE = 300V
I C = 70A
I G = 10mA
25ºC
150ºC
6
4
2
0
0
0
1
20
40
60
80
100
120
140
160
180
200
0
20
40
60
80
100
120
140
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
220
200
180
160
140
120
100
80
10,000
1,000
100
C
ies
C
oes
60
TJ = 150ºC
RG = 2
C
res
40
Ω
= 1 MHz
5
dv / dt < 10V / ns
f
20
0
10
100
150
200
250
300
350
400
450
500
550
600
650
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Forward-Bias Safe Operating Area
1000
100
10
1
VCE(sat) Limit
0.1
External Lead Limit
25µs
100µs
1ms
0.01
1
TJ = 150ºC
10ms
TC = 25ºC
DC
Single Pulse
0.001
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width - Second
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK100N60B3H1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
5
4
3
2
1
0
5
4
3
2
1
0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
7
6
5
4
3
2
1
E
E
on - - - -
VGE = 15V
E
E
on - - - -
off
RG = 2
off
Ω ,
CE = 360V
TJ = 150ºC , VGE = 15V
VCE = 360V
V
TJ = 150ºC
I C = 100A
TJ = 25ºC
I C = 50A
20
30
40
50
60
70
80
90
100
2
3
4
5
6
7
8
9
10
11
12
13
14
15
RG - Ohms
IC - Amperes
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
340
300
260
220
180
140
100
340
300
260
220
180
140
100
5
4
3
2
1
0
5
4
3
2
1
0
t f i
t
d(off) - - - -
E
E
on - - - -
off
TJ = 150ºC, GE = 15V
V
RG = 2
VGE = 15V
Ω ,
CE = 360V
V
VCE = 360V
I C = 50A
I C = 100A
I C = 50A
I C = 100A
2
3
4
5
6
7
8
9
10
11 12
13 14
15
25
50
75
100
125
150
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
280
260
240
220
200
180
160
140
120
100
240
220
200
180
160
140
120
100
80
400
350
300
250
200
150
100
50
320
280
240
200
160
120
80
tf i
t
d(on) - - - -
t f i
td(off)
- - - -
RG = 2
, VGE = 15V
Ω
RG = 2
,
VGE = 15V
Ω
VCE = 360V
VCE = 360V
I C = 100A
TJ = 150ºC
I C = 50A
TJ = 25ºC
40
60
20
30
40
50
60
IC - Amperes
70
80
90
100
25
50
75
100
125
150
TJ - Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
IXXK100N60B3H1
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
140
120
100
80
38
36
34
32
30
28
26
24
180
160
140
120
100
80
84
76
68
60
52
44
36
28
20
t r i
td(on) - - - -
t r i
td(on) - - - -
RG = 2
, VGE = 15V
Ω
TJ = 150ºC, VGE = 15V
VCE = 360V
VCE = 360V
I C = 100A
TJ = 150ºC, 25ºC
60
I C = 50A
40
60
20
40
0
20
20
30
40
50
60
70
80
90
100
2
3
4
5
6
7
8
9
10 11 12 13 14 15
RG - Ohms
IC - Amperes
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
180
37
tr i
td(on) - - - -
, VGE = 15V
160
140
120
100
80
36
35
34
33
32
31
30
29
28
RG = 2
Ω
VCE = 360V
I C = 100A
60
I C = 50A
40
20
0
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK100N60B3H1
Fig. 23. Reverse Recovery Charge Qr
Versus -diF/dt
Fig. 24. Peak Reverse Current IRM
Versus -diF/dt
Fig. 22. Forward Current IF Versus VF
Fig. 25. Dynamic Parameters Qr, IRM
Versus TVJ
Fig. 26. Recovery Time trr Versus
-diF/dt
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width [
Seconds
27.
Fig. Maximum transient thermal impedance junction to case (for diode)
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXX_100N60B3(7D)9-30-10-A
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