IXXH50N60B3D1 [LITTELFUSE]
Insulated Gate Bipolar Transistor,;
| 型号： | IXXH50N60B3D1 |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 局域网 栅 功率控制 晶体管 |
| 文件： | 总8页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
XPTTM 600V IGBT
GenX3TM w/ Diode
IXXH50N60B3D1
VCES = 600V
IC110 = 50A
VCE(sat) 1.80V
tfi(typ) = 135ns
Extreme Light Punch Through
IGBT for 5-30kHz Switching
TO-247
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
600
600
V
V
TJ = 25°C to 175°C, RGE = 1M
G
VGES
VGEM
Continuous
Transient
±20
±30
V
V
C
Tab
=
E
IC25
IC110
IF110
TC = 25°C( Chip Capability)
TC = 110°C
TC = 110°C
120
50
30
A
A
A
G = Gate
E = Emitter
C
Collector
Tab = Collector
ICM
TC = 25°C, 1ms
200
A
IA
EAS
TC = 25°C
TC = 25°C
25
A
200
mJ
A
Features
SSOA
VGE = 15V, TVJ = 150°C, RG = 5
ICM = 100
(RBSOA)
Clamped Inductive Load
@VCE VCES
Optimized for 5-30kHz Switching
Square RBSOA
tsc
VGE = 15V, VCE = 360V, TJ = 150°C
10
μs
Anti-Parallel Ultra Fast Diode
Avalanche Capability
(SCSOA)
RG = 22, Non Repetitive
PC
TC = 25°C
600
W
Short Circuit Capability
International Standard Package
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
-55 ... +175
Advantages
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
High Power Density
175°C Rated
Extremely Rugged
Low Gate Drive Requirement
Md
Mounting Torque
1.13/10
6
Nm/lb.in.
g
Weight
Applications
Symbol
Test Conditions
Characteristic Values
Power Inverters
UPS
(TJ = 25C, Unless Otherwise Specified)
Min.
600
3.5
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250A, VGE = 0V
IC = 250A, VCE = VGE
VCE = VCES, VGE = 0V
V
V
Motor Drives
SMPS
6.0
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
25 A
3 mA
TJ = 150C
TJ = 150C
IGES
VCE = 0V, VGE = 20V
100 nA
VCE(sat)
IC = 36A, VGE = 15V, Note 1
1.55
1.80
1.80
V
V
© 2013 IXYS CORPORATION, All Rights Reserved
DS100302B(8/13)
IXXH50N60B3D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-247 (IXXH) Outline
Min.
Typ.
Max.
gfs
IC = 36A, VCE = 10V, Note 1
12
19
S
Cies
Coes
Cres
2230
195
44
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
70
16
29
nC
nC
nC
IC = 36A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
27
40
ns
ns
mJ
ns
ns
1 - Gate
2,4 - Collector
3 - Emitter
Inductive load, TJ = 25°C
IC = 36A, VGE = 15V
0.67
100
135
0.74
150
VCE = 360V, RG = 5
Note 2
Eof
1.20 mJ
f
td(on)
tri
30
45
ns
ns
Inductive load, TJ = 150°C
IC = 36A, VGE = 15V
Eon
td(off)
tfi
1.40
130
190
1.20
mJ
ns
VCE = 360V, RG = 5
ns
Note 2
Eoff
mJ
RthJC
RthCS
0.25 °C/W
°C/W
0.21
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
VF
IF = 30A, VGE = 0V, Note 1
2.7
V
V
TJ = 150°C
1.6
IRM
trr
TJ = 100°C
TJ = 100°C
4
A
ns
ns
IF = 30A, VGE = 0V, -diF/dt = 100A/μs,
VR = 100V
100
25
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
RthJC
0.9 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXXH50N60B3D1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
200
180
160
140
120
100
80
VGE = 15V
VGE = 15V
70
60
50
40
30
20
10
0
14V
13V
12V
11V
14V
13V
12V
10V
9V
60
11V
40
10V
9V
20
8V
7V
7V
0
0
0.5
1
1.5
2
2.5
3
3.5
15
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGE = 15V
14V
70
VGE = 15V
13V
60
50
40
30
20
10
0
I C = 72A
12V
11V
10V
I C = 36A
9V
8V
I C = 18A
7V
6V
-50
-25
0
25
50
75
100
125
150
175
0
0.5
1
1.5
2
2.5
3
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TJ = 25ºC
I C = 72A
36A
18A
TJ = 150ºC
25ºC
- 40ºC
4
5
6
7
8
9
10
11
12
13
8
9
10
11
12
13
14
VGE - Volts
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
IXXH50N60B3D1
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
14
12
10
8
32
28
24
20
16
12
8
TJ = - 40ºC, 25ºC, 150ºC
VCE = 300V
C = 36A
I G = 10mA
I
6
4
4
2
0
0
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
IC - Amperes
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
110
100
90
80
70
60
50
40
30
20
10
0
10,000
1,000
100
= 1 MHz
f
C
ies
C
oes
res
TJ = 150ºC
RG = 5
Ω
C
dv / dt < 10V / ns
10
100
200
500
300400600
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Forward-Bias Safe Operating Area
aasss
1,000
100
10
0.4
VCE(sat) Limit
0.1
25µs
100µs
1
1ms
TJ = 175ºC
TC = 25ºC
10ms
Single Pulse
DC
0
0.01
0.00001
1
10
100
1000
0.0001
0.001
0.01
0.1
1
VDS - Volts
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH50N60B3D1
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
3.0
2.5
2.0
1.5
1.0
0.5
6
5
4
3
2
1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5
E
E
on - - - -
E
E
on - - - -
off
off
TJ = 150ºC , VGE = 15V
CE = 360V
TJ = 150ºC
RG = 5
VGE = 15V
Ω
4
3
2
1
0
VCE = 360V
V
I C = 72A
TJ = 25ºC
I C = 36A
15
20
25
30
35
40
45
50
55
60
65
70
75
5
10
15
20
25
30
35
40
45
50
RG - Ohms
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
2.2
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
240
350
300
250
200
150
100
50
t f i
t
d(off) - - - -
E
E
on - - - -
off
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
220
200
180
160
140
120
100
TJ = 150ºC, GE = 15V
V
RG = 5 VGE = 15V
Ω
CE = 360V
V
VCE = 360V
I C = 72A
I C = 36A
I C = 72A
I C = 36A
0
5
10
15
20
25
30
35
40
45
50
25
50
75
100
125
150
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
240
220
200
180
160
140
120
100
80
150
140
130
120
110
100
90
300
270
240
210
180
150
120
90
220
tf i
td(off)
- - - -
t f i
td(off)
- - - -
200
180
160
140
120
100
80
RG = 5
, VGE = 15V
Ω
RG = 5
,
VGE = 15V
Ω
TJ = 150ºC
VCE = 360V
VCE = 360V
I C = 36A
TJ = 25ºC
80
I C = 72A
70
60
60
60
60
30
40
25
50
75
100
125
150
15
20
25
30
35
40
45
50
55
60
65
70
75
TJ - Degrees Centigrade
IC - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXXH50N60B3D1
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
240
200
160
120
80
120
100
80
60
40
20
0
160
140
120
100
80
44
t r i
t
d(on) - - - -
t r i
td(on)
- - - -
41
38
35
32
29
26
23
20
T = 150ºC, V = 15V
J
GE
R
G
= 5 , V = 15V
Ω
GE
V
= 360V
CE
V
= 360V
CE
I
= 36A
C
T = 150ºC
J
I
= 72A
C
60
40
T = 25ºC
J
40
20
0
0
15
20
25
30
35
40
45
50
55
60
65
70
75
5
10
15
20
25
30
35
40
45
50
IC - Amperes
RG - Ohms
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
180
160
140
120
100
80
44
41
38
35
32
29
26
23
20
t r i
t
d(on) - - - -
R
G
= 5 , V = 15V
Ω
GE
V
= 360V
CE
I
I
= 72A
C
60
= 36A
C
40
20
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXX_50N60B3D1(5D) 8-13-13-A
IXXH50N60B3D1
60
A
1000
nC
30
A
TVJ= 100°C
VR = 300V
TVJ = 100°C
VR = 300V
50
40
30
20
10
0
25
800
IRM
IF= 60A
IF= 30A
IF= 15A
Qr
IF
20
15
10
5
IF= 60A
IF= 30A
IF= 15A
600
400
200
0
TVJ =150°C
TVJ =100°C
TVJ = 25°C
0
A/s
1000
0
1
2
3 V
VF
100
1000
0
200
400
600
A/s
-diF/dt
-diF/dt
Fig. 24. Peak Reverse Current IRM
Versus -diF/dt
Fig. 23. Reverse Recovery Charge Qr
Versus -diF/dt
Fig. 22. Forward Current IF Versus VF
2.0
90
20
1.00
s
TVJ = 100°C
TVJ = 100°C
IF = 30A
VR = 300V
V
ns
VFR
15
tfr
trr
1.5
Kf
0.75
0.50
0.25
0.
tfr
IF = 60A
IF = 30A
80
VFR
IF = 15A
1.0
10
5
IRM
70
Qr
0.5
0.0
60
0
A/s
1000
0
40
80
120
160
0
200
400
600
1000
A/s
0
200
400
600
°C
diF/dt
TVJ
-diF/dt
Fig. 26. Recovery Time trr Versus
-diF/dt
Fig. 27. Peak Forward Voltage VFR
and tfr Versus diF/dt
Fig. 25. Dynamic Parameters Qr, IRM
Versus TVJ
1
K/W
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
0.1
ZthJC
1
2
3
0.502
0.193
0.205
0.0052
0.0003
0.0162
0.01
DSEP 29-06
0.001
0.00001
s
0.0001
0.001
0.01
0.1
1
t
Fig. 28. Transient Thermal Resistance Junction to Case
© 2013 IXYS CORPORATION, All Rights Reserved
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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