IXXH60N65B4H1 [IXYS]
Insulated Gate Bipolar Transistor, 116A I(C), 650V V(BR)CES, N-Channel,;
| 型号： | IXXH60N65B4H1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 116A I(C), 650V V(BR)CES, N-Channel, 栅 |
| 文件： | 总8页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
XPTTM 650V IGBT
VCES = 650V
IC110 = 60A
VCE(sat) 2.2V
tfi(typ) = 43ns
IXXH60N65B4H1
GenX4TM w/ Sonic Diode
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
TO-247
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
650
650
V
V
TJ = 25°C to 175°C, RGE = 1M
G
C
Tab
=
E
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G = Gate
E = Emitter
C
Collector
IC25
IC110
IF110
TC = 25°C (Chip Capability)
TC = 110°C
TC = 110°C
145
60
47
A
A
A
Tab = Collector
ICM
TC = 25°C, 1ms
265
A
SSOA
VGE = 15V, TVJ = 150°C, RG = 5
ICM = 120
A
Features
(RBSOA)
Clamped Inductive Load
@VCE VCES
tsc
VGE = 15V, VCE = 360V, TJ = 150°C
10
μs
Optimized for 5-30kHz Switching
Square RBSOA
Anti-Parallel Sonic Diode
Short Circuit Capability
(SCSOA)
RG = 82, Non Repetitive
PC
TC = 25°C
536
W
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
International Standard Package
-55 ... +175
Advantages
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Md
Mounting Torque
1.13/10
6
Nm/lb.in
g
Weight
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
650
4.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250A, VGE = 0V
IC = 250A, VCE = VGE
VCE = VCES, VGE = 0V
V
V
6.5
25 A
TJ = 150C
TJ = 150C
3 mA
IGES
VCE = 0V, VGE = 20V
100 nA
VCE(sat)
IC = 60A, VGE = 15V, Note 1
1.8
2.1
2.2
V
V
© 2016 IXYS CORPORATION, All Rights Reserved
DS100494D(9/16)
IXXH60N65B4H1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-247 (IXXH) Outline
Min.
Typ.
Max.
D
A
A
B
0P 0K M D B M
E
A2
gfs
IC = 60A, VCE = 10V, Note 1
17
28
S
Q
S
D2
R
Cies
Coes
Cres
2590
310
40
pF
pF
pF
D1
D
L
VCE = 25V, VGE = 0V, f = 1MHz
0P1
4
R1
1
2
3
IXYS OPTION
C
L1
Qg(on)
Qge
86
22
35
nC
nC
nC
E1
IC = 60A, VGE = 15V, VCE = 0.5 • VCES
Qgc
A1
b
c
b2
td(on)
tri
Eon
td(off)
tfi
19
80
ns
ns
b4
1 - Gate
2,4 - Collector
3 - Emitter
e
Inductive load, TJ = 25°C
IC = 60A, VGE = 15V
J
M C A M
3.2
107
43
mJ
ns
VCE = 400V, RG = 5
ns
Note 2
Eof
1.1
mJ
f
td(on)
tri
20
74
ns
ns
Inductive load, TJ = 150°C
IC = 60A, VGE = 15V
Eon
td(off)
tfi
4.2
120
88
mJ
ns
VCE = 400V, RG = 5
ns
Note 2
Eoff
1.8
mJ
RthJC
RthCS
0.28 °C/W
°C/W
0.21
Reverse Sonic Diode (FRD)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
VF
IF = 30A, VGE = 0V, Note 1
2.5
V
V
TJ = 150°C
1.5
IRM
trr
TJ = 150°C
TJ = 150°C
25
78
A
ns
IF = 30A, VGE = 0V,
-diF/dt = 900A/μs, VR = 300V
RthJC
0.60 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXXH60N65B4H1
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
120
100
80
60
40
20
0
240
200
160
120
80
V
= 15V
GE
12V
11V
V
= 15V
GE
14V
13V
14V
13V
12V
11V
10V
9V
10V
9V
8V
7V
40
8V
7V
0
0
0.5
1
1.5
2
2.5
3
3.5
0
5
10
15
20
25
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
120
100
80
60
40
20
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
13V
12V
V
= 15V
14V
GE
V
= 15V
GE
I
= 120A
C
11V
10V
9V
I
= 60A
C
8V
7V
I
= 30A
75
C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50
-25
0
25
50
100
125
150
175
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
7
6
5
4
3
2
1
100
90
80
70
60
50
40
30
20
10
0
T
J
= 25ºC
T
= - 40ºC
25ºC
J
T
J
= 150ºC
I
= 120A
C
60A
30A
8
9
10
11
12
13
14
15
4
5
6
7
8
9
10
11
12
VGE - Volts
VGE - Volts
© 2016 IXYS CORPORATION, All Rights Reserved
IXXH60N65B4H1
Fig. 8. Gate Charge
Fig. 7. Transconductance
40
35
30
25
20
15
10
5
16
14
12
10
8
T
J
= - 40ºC
VCE = 325V
C = 60A
IG = 10mA
I
25ºC
150ºC
6
4
2
0
0
0
50
100
150
200
250
300
0
10
20
30
40
50
60
70
80
90
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
140
120
100
80
10,000
1,000
100
= 1 MHz
f
C
ies
60
C
C
oes
40
T
J
= 150ºC
R
G
= 5
Ω
20
res
dv / dt < 10V / ns
0
10
100
200
300
400
500
600
700
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH60N65B4H1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
9
8
7
6
5
4
3
2
1
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
2
1
0
E
E
E
R
E
off
on
off
on
T = 150ºC , V = 15V
J
GE
= 5
V
= 15V
Ω ,
G
GE
V
= 400V
CE
V
= 400V
CE
I
= 60A
C
T = 150ºC
J
I
= 30A
C
T = 25ºC
J
30
40
50
60
70
80
90
5
10
15
20
25
30
35
40
45
50
55
IC - Amperes
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
140
120
100
80
700
600
500
400
300
200
100
0
E
E
off
= 5
on
t f i
td(off)
R
VGE = 15V
Ω ,
G
T = 150ºC, V = 15V
J
GE
VCE = 400V
V
= 400V
CE
IC = 60A
I
= 60A
C
60
I
= 30A
C
IC = 30A
40
20
0
5
10
15
20
25
30
35
40
45
50
55
25
50
75
100
125
150
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
140
120
100
80
200
180
160
140
120
100
80
140
120
100
80
200
180
160
140
120
100
80
t f i
td(off)
t f i
td(off)
R
G
= 5 , V = 15V
Ω
R
G
= 5 , V = 15V
GE
Ω
GE
V = 400V
CE
V
= 400V
CE
I
= 30A
C
T = 150ºC
J
60
60
I
= 60A
C
T = 25ºC
J
40
40
I
= 30A
C
20
20
0
60
0
60
30
40
50
60
70
80
90
25
50
75
100
125
150
IC - Amperes
TJ - Degrees Centigrade
© 2016 IXYS CORPORATION, All Rights Reserved
IXXH60N65B4H1
Fig. 19. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
160
140
120
100
80
30
200
160
120
80
100
80
60
40
20
0
t r i
td(on)
t r i
td(on)
28
26
24
22
20
18
16
14
T = 150ºC, V = 15V
J
GE
R
G
= 5 , V = 15V
Ω
GE
V
= 400V
CE
V
= 400V
CE
I
= 60A
C
T = 150ºC
J
T = 25ºC
J
60
I
= 30A
C
40
40
20
0
0
5
10
15
20
25
30
35
40
45
50
55
30
40
50
60
70
80
90
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
120
105
90
75
60
45
30
15
0
24
23
22
21
20
19
18
17
16
t r i
td(on)
R
G
= 5 , V = 15V
Ω
GE
V
= 400V
CE
I
I
= 60A
= 30A
C
C
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH60N65B4H1
Fig. 21. Forward Current vs. Forward Voltage
Fig. 22. Reverse Recovery Charge QRR vs. -diF/dt
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
100
80
60
40
20
0
T
= 150ºC
= 300V
VJ
I
= 50A
F
V
R
T
VJ
= 25ºC
150ºC
30A
10A
0
0.5
1
1.5
2
2.5
400
600
800
1000
1200
1400
1600
1800
2000
VF
-di /d
t - A/µs
F
- Volts
t
Fig. 24. Recover Time tRR vs. -diF/d
t
Fig. 23. Peak Reverse Current IRM vs. -diF/d
140
120
100
80
70
60
50
40
30
20
10
TVJ = 150ºC
VR = 300V
TVJ = 150ºC
VR = 300V
IF = 50A
30A
10A
I F = 50A
60
30A
10A
40
20
400
600
800
1000
1200
1400
1600
1800
2000
400
600
800
1000
1200
1400
1600
1800
2000
-diF/dt - A/µs
-di /d
t - A/µs
F
Fig. 26. Dynamic Parameters QRR, IRM vs.
Virtual Junction Temperature TVJ
t
Fig. 25. Recovery Energy EREC vs. -diF/d
1.20
500
450
400
350
300
250
200
150
100
V
= 300V
R
T
= 150ºC
= 300V
VJ
I
F
= 50A
I
=50A
30A
F
V
R
1.00
0.80
0.60
0.40
0.20
-dI /dt = 900A/µs
F
K
I
RM
F
10A
K
Q
RR
F
0
20
40
60
80
100
120
140
160
400
600
800
1000
1200
1400
1600
1800
2000
-diF
d
TVJ - Degrees Centigrade
/ t - A/µs
© 2016 IXYS CORPORATION, All Rights Reserved
IXXH60N65B4H1
Fig. 27. Maximum Transient Thermal Impedance (Diode)
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXX_60N65B4(E6-RZ43) 9-23-16
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