IXXH50N60C3D1 [IXYS]
Extreme Light Punch Through IGBT for 20-60 kHz Switching; 极端的光透过， IGBT为20-60 kHz开关
| 型号： | IXXH50N60C3D1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Extreme Light Punch Through IGBT for 20-60 kHz Switching |
| 文件： | 总7页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
XPTTM 600V
IXXH50N60C3D1
VCES = 600V
IC110 = 50A
VCE(sat) ≤ 2.30V
tfi(typ) = 42ns
GenX3TM w/ Diode
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
TO-247 AD
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
600
600
V
V
G
TJ = 25°C to 175°C, RGE = 1MΩ
C
Tab
=
E
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G = Gate
E = Emitter
C
Collector
IC25
IC110
IF110
TC = 25°C
TC = 110°C
TC = 110°C
100
50
30
A
A
A
Tab = Collector
ICM
TC = 25°C, 1ms
200
A
IA
EAS
TC = 25°C
TC = 25°C
25
A
Features
200
mJ
z Optimized for 20-60kHz Switching
z Square RBSOA
SSOA
VGE = 15V, TVJ = 150°C, RG = 5Ω
Clamped Inductive Load
ICM = 100
A
μs
W
(RBSOA)
@ ≤ VCES
z Anti-Parallel Ultra Fast Diode
z Avalanche Capability
tsc
VGE= 15V, VCE = 360V, TJ = 150°C
10
(SCSOA)
RG = 22Ω, Non Repetitive
z Short Circuit Capability
z International Standard Package
PC
TC = 25°C
600
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
Advantages
-55 ... +175
z High Power Density
z 175°C Rated
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
z Extremely Rugged
z Low Gate Drive Requirement
Md
Mounting Torque
1.13/10
6
Nm/lb.in.
g
Weight
Applications
Symbol
Test Conditions
Characteristic Values
z Power Inverters
z UPS
(TJ = 25°C, Unless Otherwise Specified)
Min.
600
3.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250μA, VGE= 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE= 0V
V
V
z Motor Drives
z SMPS
5.5
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
25 μA
TJ = 150°C
TJ = 150°C
3 mA
IGES
VCE = 0V, VGE = ±20V
±100 nA
VCE(sat)
IC = 36A, VGE = 15V, Note 1
1.95
2.45
2.30
V
V
© 2010 IXYS CORPORATION, All Rights Reserved
DS100274(12/10)
IXXH50N60C3D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-247 (IXXH) Outline
Min.
Typ.
Max.
gfs
Cie
Coes
Cres
IC = 36A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
11
18
S
2320
138
42
pF
pF
pF
s
∅ P
1
2
3
Qg
64
18
25
nC
nC
nC
Qge
Qgc
IC = 36A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
24
40
ns
ns
mJ
ns
ns
e
Inductive load, TJ = 25°C
Terminals: 1 - Gate
3 - Emitted
2 - Collector
IC = 36A, VGE = 15V
0.72
62
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VCE = 360V, RG = 5Ω
100
42
Note 2
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Eof
0.33
0.55 mJ
f
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
td(on)
tri
25
44
ns
ns
Inductive load, TJ = 150°C
IC = 36A, VGE = 15V
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
Eon
td(off)
tfi
1.46
80
mJ
ns
20.80 21.46
15.75 16.26
VCE = 360V, RG = 5Ω
90
ns
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Note 2
.780 .800
.177
Eoff
0.48
mJ
∅P 3.55
3.65
.140 .144
RthJC
RthCS
0.25 °C/W
°C/W
Q
5.89
6.40 0.232 0.252
0.21
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
VF
IF = 24A, VGE = 0V, Note 1
2.7
V
V
TJ = 150°C
1.6
IRM
trr
TJ = 100°C
TJ = 100°C
4
A
ns
ns
IF = 30A, VGE = 0V, -diF/dt = 100A/μs,
VR = 100V
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
100
25
RthJC
0.9 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXXH50N60C3D1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
160
140
120
100
80
55
50
45
40
35
30
25
20
15
10
5
VGE = 15V
VGE = 15V
14V
13V
14V
13V
12V
11V
10V
12V
11V
10V
60
40
9V
20
9V
7V
8V
6V
0
0
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
55
VGE = 15V
VGE = 15V
50
45
40
35
30
25
20
15
10
5
14V
13V
12V
11V
I C = 54A
10V
9V
I C = 36A
8V
6V
I C = 18A
0
-50
-25
0
25
50
75
100
125
150
175
0
0.5
1
1.5
2
2.5
3
3.5
4
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TJ = 25ºC
I C = 54A
TJ = 150ºC
25ºC
36A
- 40ºC
18A
4
5
6
7
8
9
10
11
12
13
8
9
10
11
12
13
14
15
VGE - Volts
VGE - Volts
© 2010 IXYS CORPORATION, All Rights Reserved
IXXH50N60C3D1
Fig. 7. Transconductance
Fig. 8. Gate Charge
32
28
24
20
16
12
8
16
14
12
10
8
VCE = 300V
I C = 36A
TJ = - 40ºC, 25ºC, 150ºC
I
G = 10mA
6
4
4
2
0
0
0
0
1
10
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
60
70
QG - NanoCoulombs
IC - Amperes
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
110
100
90
80
70
60
50
40
30
20
10
0
10,000
1,000
100
= 1 MHz
f
C
ies
C
C
oes
TJ = 150ºC
RG = 5
Ω
res
dv / dt < 10V / ns
10
100
200
300
500
400600
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Forward-Bias Safe Operating Area
aasss
1000
100
10
0.4
VCE(sat) Limit
0.1
25µs
100µs
1ms
1
10ms
TJ = 175ºC
DC
TC = 25ºC
Single Pulse
0.1
0.01
0.00001
10
100
1000
0.0001
0.001
0.01
0.1
1
VDS - Volts
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH50N60C3D1
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
1.2
1.0
0.8
0.6
0.4
0.2
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.7
0.6
0.5
0.4
0.3
0.2
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
E
E
on - - - -
VGE = 15V
E
E
on - - - -
off
RG = 5
off
TJ = 150ºC
TJ = 150ºC , VGE = 15V
VCE = 360V
Ω ,
VCE = 360V
I C = 54A
TJ = 25ºC
I C = 36A
18
22
26
30
34
38
42
46
50
54
5
10
15
20
25
30
35
40
45
50
RG - Ohms
IC - Amperes
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
120
110
100
90
350
300
250
200
150
100
50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
E
E
on - - - -
t f i
t
d(off) - - - -
off
RG = 5
VGE = 15V
Ω ,
TJ = 150ºC, GE = 15V
V
VCE = 360V
CE = 360V
V
I C = 54A
I C = 36A
80
I C = 54A
70
I C = 36A
60
50
0
5
10
15
20
25
30
35
40
45
50
25
50
75
100
125
150
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
120
90
85
80
75
70
65
60
55
50
45
40
160
140
120
100
80
120
tf i
td(on)
- - - -
110
100
90
t f i
td(off)
- - - -
110
100
90
RG = 5
, VGE = 15V
Ω
RG = 5
,
VGE = 15V
Ω
VCE = 360V
VCE = 360V
I C = 36A
TJ = 150ºC
80
70
80
60
60
70
I C = 54A
50
40
60
40
TJ = 25ºC
20
50
30
20
0
40
25
50
75
100
125
150
18
22
26
30
34
38
42
46
50
54
TJ - Degrees Centigrade
IC - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXXH50N60C3D1
Fig. 20. Inductive Turn-on Switching Times vs.
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
90
80
70
60
50
40
30
20
10
0
30
140
130
120
110
100
90
110
100
90
80
70
60
50
40
30
20
10
0
tr i
td(on)
- - - -
, VGE = 15V
tr i
td(on) - - - -
29
28
27
26
25
24
23
22
21
RG = 5
Ω
TJ = 150ºC, VGE = 15V
VCE = 360V
VCE = 360V
TJ = 150ºC
80
I C = 36A
70
60
TJ = 25ºC
I C = 54A
50
40
30
18
22
26
30
34
38
42
46
50
54
5
10
15
20
25
30
35
40
45
50
IC - Amperes
RG - Ohms
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
130
110
90
32
30
28
26
24
22
20
tr i
td(on) - - - -
RG = 5
, VGE = 15V
Ω
VCE = 360V
I C = 54A
70
I C = 36A
50
30
10
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXH50N60C3D1
60
A
1000
nC
30
A
TVJ= 100°C
VR = 300V
TVJ = 100°C
VR = 300V
50
40
30
20
10
0
25
800
IRM
IF= 60A
IF= 30A
IF= 15A
Qr
IF
20
15
10
5
IF= 60A
IF= 30A
IF= 15A
600
400
200
0
TVJ =150°C
TVJ =100°C
TVJ = 25°C
0
A/μs
1000
0
1
2
3 V
VF
100
1000
0
200
400
600
A/μs
-diF/dt
-diF/dt
Fig. 24. Peak Reverse Current IRM
Versus -diF/dt
Fig. 23. Reverse Recovery Charge Qr
Versus -diF/dt
Fig. 22. Forward Current IF Versus VF
2.0
90
20
1.00
μs
TVJ = 100°C
TVJ = 100°C
IF = 30A
VR = 300V
V
ns
VFR
15
tfr
trr
1.5
Kf
0.75
0.50
0.25
0.
tfr
IF = 60A
IF = 30A
80
VFR
IF = 15A
1.0
10
5
IRM
70
Qr
0.5
0.0
60
0
A/μs
1000
0
40
80
120
160
0
200
400
600
1000
A/μs
0
200
400
600
°C
diF/dt
TVJ
-diF/dt
Fig. 26. Recovery Time trr Versus
-diF/dt
Fig. 27. Peak Forward Voltage VFR
and tfr Versus diF/dt
Fig. 25. Dynamic Parameters Qr, IRM
Versus TVJ
1
K/W
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
0.1
ZthJC
1
2
3
0.502
0.193
0.205
0.0052
0.0003
0.0162
0.01
DSEP 29-06
0.001
0.00001
s
0.0001
0.001
0.01
0.1
1
t
Fig. 28. Transient Thermal Resistance Junction to Case
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXX_50N60C3(5D)5-20-10
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