IXTT10N100D [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXTT10N100D |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDSX = 1000V
ID25 = 10A
RDS(on) 1.4
High Voltage
MOSFET
IXTH10N100D
IXTT10N100D
N-Channel, Depletion Mode
TO-268 (IXTT)
G
Symbol
VDSX
Test Conditions
Maximum Ratings
S
D (Tab)
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
1000
1000
V
V
VDGX
VGSX
VGSM
Continuous
Transient
30
40
V
V
TO-247 (IXTH)
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
10
20
A
A
G
PD
TC = 25C
400
W
D
D (Tab)
S
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
C
C
C
G = Gate
S = Source
D
= Drain
Tab = Drain
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Md
Mounting Torque (TO-247)
1.13 / 10
Nm/lb.in.
Weight
TO-268
TO-247
4
6
g
g
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies meet UL94V-0
Flammability Classification
Symbol
Test Conditions
Characteristic Values
Advantages
(TJ = 25C, Unless Otherwise Specified)
Min.
1000
-1.5
Typ.
Max.
BVDSX
VGS(off)
IGSX
VGS = -10V, ID = 250A
VDS = 25V, ID = 250A
VGS = 30V, VDS = 0V
VDS = VDSX, VGS = -10V
V
V
• Easy to Mount
• Space Savings
• High Power Density
- 3.5
100 nA
25 A
IDSX(off)
Applications
TJ = 125C
500 A
• Level Shifting
• Triggers
RDS(on)
ID(on)
VGS = 10V, ID = 10A, Note 1
VGS = 0V, VDS = 25V, Note 1
1.4
• Solid State Relays
• Current Regulators
• Active Load
1.0
A
DS99529D(8/17)
© 2018 IXYS CORPORATION, All Rights Reserved
IXTT10N100D
IXTH10N100D
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 30V, ID = 0.5 • ID25, Note 1
VGS = -10V, VDS = 25V, f = 1MHz
3.0
5.4
S
Ciss
Coss
Crss
2500
pF
pF
pF
300
100
td(on)
tr
td(off)
tf
35
85
ns
ns
ns
ns
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSX, ID = 0.5 • ID25
RG = 4.7 (External)
110
75
Qg(on)
Qgs
130
27
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSX, ID = 0.5 • ID25
Qgd
58
RthJC
RthCS
0.31C/W
C/W
TO-247
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
VSD
trr
IF = ID25, VGS = -10V, Note 1
1.1
1.5
V
IF = 10A, -di/dt = 100A/s
VR = 100V, VGS = -10V
850
ns
Note
1: Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTT10N100D
IXTH10N100D
Fig. 1. Output Characteristics @ TJ = 25oC
Fig. 2. Extended Output Characteristics @ TJ = 25oC
10
9
8
7
6
5
4
3
2
1
0
20
18
16
14
12
10
8
V
= 5V
GS
V
= 5V
4V
GS
4V
3V
3V
2V
1V
2V
1V
6
4
2
0V
-1V
0V
- 1V
0
0
2
4
6
8
10
12
14
30
20
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 5A Value
vs. Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
2.8
2.4
2.0
1.6
1.2
0.8
0.4
10
9
8
7
6
5
4
3
2
1
0
V
= 5V
GS
V
= 10V
GS
4V
3V
I
= 10A
D
2V
1V
I
= 5A
D
0V
-1V
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 5A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs. Case Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
10
8
V
= 10V
GS
T
J
= 125oC
6
4
T
J
= 25oC
2
0
0
2
4
6
8
10
12
14
16
18
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
ID - Amperes
© 2018 IXYS CORPORATION, All Rights Reserved
IXTT10N100D
IXTH10N100D
Fig. 8. Transconductance
Fig. 7. Input Admittance
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
T
J
= - 40oC
25oC
125oC
T
J
= 125oC
25oC
- 40oC
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
6
7
8
9
10
VGS - Volts
ID - Amperes
Fig. 10. Breakdown & Threshold Voltages
vs. Junction Temperature
Fig. 9. Forward Voltage Drop of Intrinsic Diode
30
25
20
15
10
5
1.5
V
= -10V
GS
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
@ V = 25V
DS
GS(off)
BV
@ V = -10V
GS
DSS
T
J
= 125oC
T
J
= 25oC
0
-50
-25
0
25
50
75
100
125
150
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VSD - Volts
TJ - Degrees Centigrade
Fig. 11. Gate Charge
Fig. 12. Capacitance
10
8
10,000
1,000
100
f
= 1 MHz
V
= 500V
DS
C
iss
I
I
= 5A
D
G
= 10mA
6
4
C
oss
2
0
C
-2
-4
-6
rss
10
0
20
40
60
80
100
120
140
0
5
10
15
20
25
30
35
40
QG - NanoCoulombs
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT10N100D
IXTH10N100D
Fig. 13. Forward-Bias Safe Operating Area
@ TC = 25oC
Fig. 14. Forward-Bias Safe Operating Area
@ TC = 75oC
100
10
1
100
10
1
T = 150oC
T = 150oC
J
J
= 75oC
T
= 75oC
T
C
C
Single Pulse
Single Pulse
R
Limit
DS(on)
R
Limit
DS(on)
25μs
25μs
100μs
100μs
1ms
1ms
10ms
10ms
100ms
DC
100ms
DC
0.1
0.1
10
100
1,000
10,000
10
1
100
1,000
10,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2018 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_10N100D(7N)12-10-12-C
IXTT10N100D
IXTH10N100D
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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