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IXTT12N150 [LITTELFUSE]

Power Field-Effect Transistor,;
IXTT12N150
型号： IXTT12N150
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,
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中文：  中文翻译
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High Voltage  
Power MOSFET  
VDSS = 1500V  
ID25 = 12A  
RDS(on) 2.2  
IXTT12N150  
IXTH12N150  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-268 (IXTT)  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1500  
1500  
V
V
D (Tab)  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
TO-247 (IXTH)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
12  
40  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
6
A
G
D
D (Tab)  
750  
mJ  
S
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
5
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
890  
Tab = Drain  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
TL  
TSOLD  
1.6mm (0.062 in.) From Case for 10s  
Plastic Body for 10s  
300  
260  
C  
C  
Features  
Md  
Mounting Torque  
1.13 / 10  
Nm/lb.in.  
International Standard Packages  
Molding Epoxies Weet UL 94 V-0  
Flammability Classification  
Fast Intrinsic Diode  
Weight  
TO-268  
TO-247  
4.0  
6.0  
g
g
Low Package Inductance  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1500  
2.5  
Typ.  
Max.  
Advantages  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250A  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Easy to Mount  
Space Savings  
High Power Density  
4.5  
100 nA  
IDSS  
25 A  
500 A  
Applications  
TJ = 125C  
High Voltage Power Supplies  
Capacitor Discharge  
Pulse Circuits  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
2.2  
DS100425C(6/15)  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXTT12N150  
IXTH12N150  
Symbol  
Test Conditions  
Characteristic Values  
TO-268 Outline  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
8
13  
S
Ciss  
Coss  
Crss  
3720  
240  
80  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
26  
16  
53  
14  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2(External)  
Terminals: 1 - Gate  
2,4 - Drain  
3 - Source  
Qg(on)  
Qgs  
106  
17  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
50  
RthJC  
RthCS  
0.14 C/W  
C/W  
TO-247  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
12  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
48  
TO-247 Outline  
1.4  
trr  
1.2  
24.5  
14.8  
μs  
A
IF = 6A, -di/dt = 100A/s  
IRM  
QRM  
P  
1
2
3
VR = 100V, VGS = 0V  
μC  
e
Note  
1. Pulse test, t 300μs, duty cycle, d 2%.  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTT12N150  
IXTH12N150  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Output Characteristics @ TJ = 125ºC  
14  
12  
10  
8
8
7
6
5
4
3
2
1
0
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
6V  
5.5V  
5V  
5V  
6
4
2
4V  
0
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 3. RDS(on) Normalized to ID = 6A Value vs.  
Junction Temperature  
Fig. 4. RDS(on) Normalized to ID = 6A Value vs.  
Drain Current  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
V
= 10V  
GS  
V
= 10V  
GS  
T
J
= 125ºC  
I
= 12A  
D
I
= 6A  
D
T
J
= 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
12  
14  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 5. Maximum Drain Current vs.  
Case Temperature  
Fig. 6. Input Admittance  
14  
12  
10  
8
14  
12  
10  
8
T
J
= 125ºC  
25ºC  
- 40ºC  
6
6
4
4
2
2
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXTT12N150  
IXTH12N150  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
22  
20  
18  
16  
14  
12  
10  
8
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
6
T
J
= 25ºC  
0.9  
4
2
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
1.0  
0
2
4
6
8
10  
12  
14  
VSD - Volts  
ID - Amperes  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
10,000  
1,000  
100  
V
= 700V  
DS  
I
I
= 6A  
D
G
C
iss  
= 10mA  
C
C
oss  
rss  
= 1 MHz  
5
f
10  
0
10  
15  
20  
25  
30  
35  
40  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
VDS - Volts  
QG - NanoCoulombs  
Fig. 11. Forward-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance  
100  
10  
1
1
25µs  
R
Limit  
DS(on)  
0.1  
100µs  
1ms  
0.01  
T
= 150ºC  
= 25ºC  
J
T
C
10ms  
DC  
Single Pulse  
0.1  
0.001  
10  
100  
1,000  
10,000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_12N150 (8M) 5-23-11  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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