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IXTT110N10L2 [LITTELFUSE]

Power Field-Effect Transistor,;
IXTT110N10L2
型号： IXTT110N10L2
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,

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Advance Technical Information  
LinearL2TM Power  
MOSFET w/ Extended  
FBSOA  
VDSS = 100V  
ID25 = 110A  
RDS(on) ≤ 18mΩ  
IXTH110N10L2  
IXTT110N10L2  
N-Channel Enhancement Mode  
Guaranteed FBSOA  
Avalanche Rated  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
100  
100  
V
V
D
D (Tab)  
S
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-268 (IXTT)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
110  
300  
A
A
G
IA  
EAS  
TC = 25°C  
TC = 25°C  
110  
3
A
J
S
D (Tab)  
PD  
TC = 25°C  
600  
W
TJ  
-55 to +150  
+150  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 to +150  
TL  
1.6mm (0.063in) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
TSOLD  
Features  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
z Designed for Linear Operation  
z International Standard Packages  
z Avalanche Rated  
Weight  
TO-247  
TO-268  
6.0  
4.0  
g
g
z Integrated Gate Resistor for Easy  
Paralleling  
z Guaranteed FBSOA at 75°C  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
100  
2.5  
Typ.  
Max.  
z
Easy to Mount  
Space Savings  
High Power Density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
4.5  
z
±100 nA  
μA  
Applications  
IDSS  
5
TJ = 125°C  
VGS = 10V, ID = 0.5 • ID25, Note 1  
50 μA  
18 mΩ  
z Solid State Circuit Breakers  
z Soft Start Controls  
RDS(on)  
z Linear Amplifiers  
z Programmable Loads  
z Current Regulators  
© 2010 IXYS CORPORATION, All Rights Reserved  
DS100235(01/10)  
IXTH110N10L2  
IXTT110N10L2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXTH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
45  
55  
65  
S
Ciss  
Coss  
Crss  
10.5  
1585  
420  
nF  
pF  
pF  
∅ P  
1
2
3
RGi  
Gate Input Resistance  
1.8  
Ω
td(on)  
tr  
td(off)  
tf  
28  
130  
99  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
e
RG = 2.2Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
24  
3 - Source  
Qg(on)  
Qgs  
260  
52  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
106  
RthJC  
RthCS  
0.21 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
TO-247  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Safe Operating Area Specification  
Characteristic Values  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
VDS = 80V, ID = 3.6A, TC = 75°C, tp = 5s  
360  
W
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
TO-268 (IXTT) Outline  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
110  
440  
1.4  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
trr  
IRM  
QRM  
230  
19.4  
2.2  
ns  
A
μC  
IF = 55A, -di/dt = 100A/μs,  
VR = 50V, VGS = 0V  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH110N10L2  
IXTT110N10L2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
VGS = 20V  
VGS = 20V  
14V  
12V  
10V  
14V  
12V  
10V  
8V  
8V  
6V  
6V  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
0
2
4
6
8
10  
12  
14  
16  
18  
20  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 55A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 20V  
VGS = 10V  
14V  
12V  
10V  
I D = 110A  
8V  
I D = 55A  
6V  
5V  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 55A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
120  
100  
80  
60  
40  
20  
0
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
20V  
TJ = 125ºC  
- - - -  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
50  
100  
150  
200  
250  
300  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTH110N10L2  
IXTT110N10L2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
180  
160  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
60  
25ºC  
- 40ºC  
40  
20  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
320  
280  
240  
200  
160  
120  
80  
16  
14  
12  
10  
8
VDS = 50V  
I D = 55A  
I G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
40  
2
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
0
50  
100  
150  
200  
250  
300  
350  
400  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
= 1 MHz  
f
C
iss  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTH110N10L2  
IXTT110N10L2  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
1,000  
100  
10  
1,000  
100  
10  
RDS(on) Limit  
RDS(on) Limit  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
10ms  
100ms  
DC  
100ms  
DC  
TJ = 150ºC  
C = 75ºC  
Single Pulse  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
T
T
1
1
1
10  
100  
1
10  
100  
VDS - Volts  
VDS - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_110N10L2(8R)01-22-10  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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