IXTT120N15P [LITTELFUSE]
Power Field-Effect Transistor, 120A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN;![IXTT120N15P](http://pdffile.icpdf.com/pdf2/p00315/img/icpdf/IXTQ120N15P_1890917_icpdf.jpg)
型号: | IXTT120N15P |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, 120A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN |
文件: | 总6页 (文件大小:213K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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IXTQ 120N15P
IXTT 120N15P
VDSS = 150 V
ID25 = 120 A
RDS(on) ≤ 16 mΩ
PolarHTTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-3P (IXTQ)
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
150
150
V
V
VDSS
VGSM
Continuous
Transient
20
30
V
V
ID25
TC =25° C
120
75
A
A
A
G
D
(TAB)
S
ID(RMS)
IDM
External lead current limit
TC = 25° C, pulse width limited by TJM
260
IAR
TC =25° C
60
A
EAR
EAS
TC =25° C
TC =25° C
60
mJ TO-268 (IXTT)
2.0
J
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 4 Ω
,
10
V/ns
G
S
D (TAB)
TC =25° C
600
W
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
G = Gate
S = Source
D = Drain
TAB = Drain
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
Features
Md
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
l
Weight
TO-3P
TO-268
5.5
5.0
g
g
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
l
l
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 20 VDC, VDS = 0
150
V
V
Advantages
3.0
5.0
l
Easy to mount
Space savings
l
100
nA
l
High power density
IDSS
VDS = VDSS
VGS = 0 V
25
500
µA
µA
TJ = 175° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
16 mΩ
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
DS99280E(10/05)
© 2005 IXYS All rights reserved
IXTQ 120N15P
IXTT 120N15P
Symbol
gfs
Test Conditions
Characteristic Values
TO-3P (IXTQ) Outline
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
40
60
S
Ciss
Coss
Crss
4900
1300
330
pF
pF
pF
td(on)
tr
td(off)
tf
33
42
85
26
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 4 Ω (External)
Qg(on)
Qgs
150
40
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
80
RthJC
RthCS
0.25° C/W
° C/W
(TO-3P)
0.21
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
Repetitive
120
A
A
V
TO-268 Outline
ISM
260
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
QRM
IF = 25 A, -di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
150
2.3
ns
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXTQ 120N15P
IXTT 120N15P
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
@ 25 C
º
º
C
120
100
80
60
40
20
0
280
240
200
160
120
80
VGS = 10V
9V
V
= 10V
9V
GS
8V
7V
8V
7V
6V
5V
40
6V
9
0
0
1
2
3
4
5
6
7
8
10
0
0.5
1
1.5
2
2.5
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 150
Fig. 4. RDS(on Normalized to 0.5 ID25
Value vs. Junction Temperature
)
º
C
120
100
80
60
40
20
0
2.8
2.6
2.4
2.2
2
VGS = 10V
9V
VGS = 10V
8V
ID = 120A
7V
1.8
1.6
1.4
1.2
1
ID = 60A
6V
5V
4
0.8
0.6
0
1
2
VD S - Volts
3
5
-50 -25
0
25
TJ - Degrees Centigrade
50
75 100 125 150 175
Fig. 5. RDS(on) Normalized to 0.5 ID25
Value vs. Drain Current
Fig. 6. Drain Current vs. Case
Temperature
90
80
70
60
50
40
30
20
10
0
4
3.5
3
External Lead Current Limit
º
TJ = 175 C
2.5
2
VGS = 10V
V
GS
= 15V
1.5
1
º
TJ = 25 C
0.5
-50 -25
0
25
50
TC - Degrees Centigrade
75 100 125 150 175
0
30 60 90 120 150 180 210 240 270 300
I D - Amperes
© 2005 IXYS All rights reserved
IXTQ 120N15P
IXTT 120N15P
Fig. 8. Transconductance
Fig. 7. Input Admittance
210
180
150
120
90
90
80
70
60
50
40
30
20
10
0
º
TJ = -40 C
25ºC
150ºC
º
TJ = 150 C
60
25ºC
-40ºC
30
0
4
0.4
0
4.5
5
5.5
6
6.5
VG S - Volts
7
7.5
8
8.5
9
0
30
60
90 120 150 180 210 240 270
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
300
250
200
150
100
50
VDS = 75V
ID = 60A
I
G = 10mA
º
TJ = 150 C
º
TJ = 25 C
0
0.6
0.8
1
1.2
VS D - Volts
1.4
1.6
1.8
0
20
40
60
Q G - nanoCoulombs
80
100 120 140 160
Fig. 12. Forward-Bias
Safe Operating Area
Fig. 11. Capacitance
10,000
1,000
100
1000
100
10
º
TJ = 175 C
= 25ºC
TC
RDS(on) Limit
C
iss
25µs
100µs
C
oss
1ms
10ms
C
rss
f = 1MHz
DC
5
10
15 20
VDS - Volts
25
30
35
40
10
100
VD S - Volts
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 120N15P
IXTT 120N15P
Fig . 13 . M a xim u m T r a n s ie n t T h e r m a l Re s is ta n c e
1 . 0 0
0 . 1 0
0 . 0 1
0 . 1
1
1 0
1 0 0
1 0 0 0
Puls e W id th - millis ec o n ds
© 2005 IXYS All rights reserved
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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