IXTT12N140 [IXYS]
Power Field-Effect Transistor, 12A I(D), 1400V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN;
| 型号： | IXTT12N140 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 12A I(D), 1400V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
Depletion Mode
MOSFETs
VDSX = 1000V
ID(on) > 10A
IXTH10N100D2
IXTT10N100D2
RDS(on) ≤ 1.5Ω
N-Channel
TO-247 (IXTH)
G
Symbol
VDSX
Test Conditions
Maximum Ratings
D
D (Tab)
S
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1000
1000
V
V
VDGX
VGSX
VGSM
Continuous
Transient
±20
±30
V
V
TO-268 (IXTT)
PD
TC = 25°C
695
W
G
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
S
D (Tab)
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
G = Gate
D
= Drain
S = Source
Tab = Drain
Md
Mounting Torque (TO-247)
1.13 / 10
Nm/lb.in.
Weight
TO-247
TO-268
6
4
g
g
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL94V-0
Flammability Classification
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
1000
- 2.5
Typ.
Max.
• Easy to Mount
• Space Savings
• High Power Density
BVDSX
VGS(off)
IGSX
VGS = - 5V, ID = 250μA
VDS = 25V, ID = 1mA
VGS = ±20V, VDS = 0V
VDS = VDSX, VGS= - 5V
V
V
- 4.5
Applications
±100 nA
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
IDSX(off)
10 μA
250 μA
TJ = 125°C
RDS(on)
ID(on)
VGS = 0V, ID = 5A, Note 1
1.5
Ω
VGS = 0V, VDS = 25V, Note 1
10
A
DS100326(04/11)
© 2011 IXYS CORPORATION, All Rights Reserved
IXTH10N100D2
IXTT10N100D2
Symbol
Test Conditions
Characteristic Values
TO-247 Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 30V, ID = 5A, Note 1
11
17
S
Ciss
Coss
Crss
5320
300
70
pF
pF
pF
∅ P
VGS = -10V, VDS = 25V, f = 1MHz
1
2
3
td(on)
tr
td(off)
tf
33
36
ns
ns
ns
ns
Resistive Switching Times
VGS = + 5V, VDS = 500V, ID = 5A
RG = 3.3Ω (External)
33
e
164
Terminals: 1 - Gate
2 - Drain
3 - Source
Qg(on)
Qgs
200
19
nC
nC
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VGS = + 5V, VDS = 500V, ID = 5A
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qgd
98
RthJC
RthCS
0.18 °C/W
°C/W
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
TO-247
0.21
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Safe-Operating-Area Specification
Characteristic Values
Min. Typ. Max.
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Symbol
SOA
Test Conditions
.780 .800
.177
VDS = 800V, ID = 0.22A, TC = 75°C, tp = 5s
176
W
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
Source-Drain Diode
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
TO-268 Outline
VSD
IF = 10A, VGS = -10V, Note 1
0.8
1.3
V
trr
IRM
QRM
1.2
23
13.8
μs
A
μC
IF = 5A, -di/dt = 100A/μs
VR = 100V, VGS = -10V
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
3 - Source
2,4 - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTH10N100D2
IXTT10N100D2
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
10
9
8
7
6
5
4
3
2
1
0
24
20
16
12
8
VGS = 5V
VGS = 5V
1V
2V
1V
0V
0V
-1V
-1V
- 2V
- 3V
4
- 2V
- 3V
0
0
1
2
3
4
5
6
7
8
9
10
11
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
Fig. 4. Drain Current @ TJ = 25ºC
10
9
8
7
6
5
4
3
2
1
0
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
VGS = 5V
0V
VGS
=
- 3.25V
- 3.50V
-1V
- 3.75V
- 4.00V
- 4.25V
- 4.50V
- 2V
- 3V
- 4.75V
- 5.00V
0
4
8
12
16
20
24
0
100
200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
VDS - Volts
Fig. 6. Dynamic Resistance vs. Gate Voltage
Fig. 5. Drain Current @ TJ = 100ºC
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
V
DS = 700V - 100V
∆
VGS = - 3.50V
- 3.75V
- 4.00V
TJ = 25ºC
- 4.25V
- 4.50V
TJ = 100ºC
- 4.75V
- 5.00V
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
-5.0
-4.8
-4.6
-4.4
-4.2
-4.0
-3.8
-3.6
-3.4
-3.2
VGS - Volts
© 2011 IXYS CORPORATION, All Rights Reserved
IXTH10N100D2
IXTT10N100D2
Fig. 8. RDS(on) Normalized to ID = 5A Value
Fig. 7. Normalized RDS(on) vs. Junction Temperature
vs. Drain Current
2.6
2.2
1.8
1.4
1.0
0.6
0.2
2.6
2.2
1.8
1.4
1.0
0.6
VGS = 0V
VGS = 0V
5V
- - - -
I
> 5A
D
TJ = 125ºC
TJ = 25ºC
0
4
8
12
16
20
24
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TJ - Degrees Centigrade
Fig. 9. Input Admittance
Fig. 10. Transconductance
16
14
12
10
8
16
14
12
10
8
VDS = 30V
VDS = 30V
TJ = - 40ºC
TJ = 125ºC
25ºC
25ºC
- 40ºC
125ºC
6
6
4
4
2
2
0
0
0
2
4
6
8
10
12
14
16
18
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
ID - Amperes
VGS - Volts
Fig. 11. Normalized Breakdown and Threshold
Voltages vs. Junction Temperature
Fig. 12. Forward Voltage Drop of Intrinsic Diode
30
25
20
15
10
5
1.3
1.2
1.1
1.0
0.9
0.8
VGS = -10V
VGS(off) @ VDS = 25V
BVDSX @ VGS = - 5V
TJ = 125ºC
TJ = 25ºC
0
0.4
0.5
0.6
0.7
0.8
0.9
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VSD - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH10N100D2
IXTT10N100D2
Fig. 13. Capacitance
Fig. 14. Gate Charge
5
4
100,000
10,000
1,000
100
VDS = 500V
= 1 MHz
f
I
I
D = 5A
3
G = 10mA
C
iss
2
1
0
-1
-2
-3
-4
-5
C
C
oss
rss
10
0
20
40
60
80
100
120
140
160
180
200
0
5
10
15
20
25
30
35
40
QG - NanoCoulombs
VDS - Volts
Fig. 15. Forward-Bias Safe Operating Area
@ TC = 25ºC
Fig. 16. Forward-Bias Safe Operating Area
@ TC = 75ºC
100
10
1
100
10
1
R
Limit
DS(on)
R
Limit
DS(on)
25µs
25µs
100µs
1ms
100µs
1ms
10ms
10ms
T
T
= 150ºC
= 25ºC
T
= 150ºC
J
J
100ms
T
= 75ºC
C
C
DC
Single Pulse
Single Pulse
100ms
DC
0
0
10
100
1,000
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 17. Maximum Transient Thermal Impedance
hvjv
0.300
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_10N100D2(8C)04-06-11
相关型号：
IXTT170N10P
Power Field-Effect Transistor, 170A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
LITTELFUSE
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