IXTT110N10P [IXYS]
N-Channel Enhancement Mode; N沟道增强模式
| 型号： | IXTT110N10P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | N-Channel Enhancement Mode |
| 文件： | 总5页 (文件大小：580K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
IXTQ 110N10P
IXTT 110N10P
VDSS = 100
ID25 = 110
RDS(on) = 15 mΩ
V
A
PolarHTTM
Power MOSFET
N-Channel Enhancement Mode
TO-3P(IXTQ)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
T
= 25°C to 175°C
100
100
V
V
TJJ = 25°C to 175°C; RGS = 1 MΩ
VGSM
20
V
ID25
ID(RMS)
IDM
T
= 25°C
110
75
250
A
A
A
G
D
ECxternal lead current limit
(TAB)
S
TC = 25°C, pulse width limited by TJM
IAR
TC = 25°C
60
A
EAR
EAS
TC = 25°C
TC = 25°C
40
mJ
J
TO-268 (IXTT)
1.0
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
,
10
V/ns
G
S
D (TAB)
PD
TC = 25°C
480
W
G = Gate
D = Drain
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
S = Source
TAB = Drain
-55 ... +150
Features
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Md
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
z
z
Weight
TO-3P
TO-268
5.5
5.0
g
g
Advantages
Symbol
TestConditions
Characteristic Values
z
Easy to mount
Space savings
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
z
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 20 VDC, VDS = 0
100
V
V
z
High power density
2.5
5.0
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
TJ = 150°C
PolarHTTM DMOStransistors
utilize proprietary designs and
process. US patent is pending.
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
15 mΩ
DS99132(05/04)
© 2004 IXYS All rights reserved
IXTQ 110N10P
IXTT 110N10P
Symbol
gfs
TestConditions
Characteristic Values
TO-3P (IXTQ) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
30
40
S
Ciss
Coss
Crss
3550
1370
440
pF
pF
pF
td(on)
tr
td(off)
tf
21
25
65
25
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
RG = 4 Ω (External)
Qg(on)
Qgs
110
25
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
62
RthJC
RthCK
0.31 K/W
K/W
(TO-3P)
0.21
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
TestConditions
Min.
typ.
Max.
VGS = 0 V
110
A
A
V
TO-268 Outline
ISM
Repetitive
250
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 25 A
-di/dt = 100 A/µs
VR = 50 V
130
2.0
ns
QRM
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
4,835,592 4,881,106
5,017,508 5,049,961
5,187,117
5,381,025 6,162,665
5,486,715
6,306,728 B1 6,534,343
6,683,344
6,710,405B2
oneormoreofthefollowingU.S.patents:
4,850,072 4,931,844
5,034,796 5,063,307
5,237,481
6,259,123B1 6,404,065B1 6,583,505
IXTQ 110N10P
IXTT 110N10P
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
º
C
@ 25 C
º
220
200
180
160
140
120
100
80
110
100
90
80
70
60
50
40
30
20
10
0
VGS = 10V
9V
V
= 10V
GS
9V
8V
8V
7V
7V
6V
60
40
6V
5V
20
0
0
1
2
3
4
5
6
7
8
9
10
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
Fig. 4. RDS(on Normalized to 0.5 ID25
Value vs. Junction Temperature
)
@ 150ºC
110
100
90
80
70
60
50
40
30
20
10
0
2.4
2.2
2
VGS = 10V
9V
VGS = 10V
1.8
1.6
1.4
1.2
1
8V
7V
ID = 110A
ID = 55A
6V
5V
0.8
0.6
-50 -25
0
25
50
75 100 125 150 175
0
0.5
1
1.5
2
2.5
3
3.5
4
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to 0.5 ID25
Value vs. Drain Current
Fig. 6. Drain Current vs. Case
Temperature
80
70
60
50
40
30
20
10
0
3
2.8
2.6
2.4
2.2
2
External Lead Current Limit
º
TJ = 175 C
1.8
1.6
1.4
1.2
1
VGS = 10V
V
GS
= 15V
º
TJ = 25 C
0.8
0.6
-50 -25
0
25
50
75 100 125 150 175
0
25 50 75 100 125 150 175 200 225 250
I D - Amperes
TC - Degrees Centigrade
© 2004 IXYS All rights reserved
IXTQ 110N10P
IXTT 110N10P
Fig. 8. Transconductance
Fig. 7. Input Admittance
250
225
200
175
150
125
100
75
70
60
50
40
30
20
10
0
º
TJ = -40 C
25ºC
150ºC
º
TJ = -40 C
25ºC
150ºC
50
25
0
4
5
6
7
8
9
10
11
0
50
100
150
200
250
300
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
VDS = 50V
D = 55A
IG = 10mA
I
º
TJ = 150 C
º
TJ = 25 C
0
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
20
40
60
80
100
120
VS D - Volts
Q G - nanoCoulombs
Fig. 12. Forward-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
100
1000
100
10
º
TJ = 175 C
TC
= 25ºC
RDS(on) Limit
C
C
C
iss
25µs
100µs
1ms
oss
10ms
rss
35
DC
f = 1MHz
0
5
10
15
20
25
30
40
1
10
100
1000
VDS - Volts
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
4,835,592 4,881,106
5,017,508 5,049,961
5,187,117
5,381,025 6,162,665
6,306,728 B1 6,534,343
6,683,344
6,710,405B2
oneormoreofthefollowingU.S.patents:
4,850,072 4,931,844
5,034,796 5,063,307
5,237,481
5,486,715 6,259,123B1 6,404,065B1 6,583,505
IXTQ 110N10P
IXTT 110N10P
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is ta n c e
1 . 0 0
0 . 1 0
0 . 0 1
0 . 1
1
1 0
1 0 0
1 0 0 0
Pu ls e W id th - millis e c o n d s
© 2004 IXYS All rights reserved
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