IXTT10P50 [IXYS]
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated; 标准功率MOSFET P沟道增强型额定雪崩
| 型号： | IXTT10P50 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated |
| 文件： | 总2页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDSS
ID25 RDS(on)
Standard Power MOSFET
P-ChannelEnhancementMode
IXTH/IXTT 10P50
-500 V -10 A 0.90 Ω
-500 V -11 A 0.75 Ω
AvalancheRated
IXTH/IXTT 11P50
TO-247AD(IXTH)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
-500
-500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
(TAB)
D
ID25
IDM
IAR
TC = 25°C
10P50
11P50
-10
-11
A
A
TO-268 (IXTT) Case Style
TC = 25°C, pulse width limited by TJ
TC = 25°C
10P50
-40
A
11P50
-44
A
10P50
11P50
-10
-11
A
A
G
(TAB)
D
EAR
PD
TC = 25°C
TC = 25°C
30
mJ
W
S
D = Drain
300
G = Gate
S = Source
TAB = Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Md
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
Features
Weight
TO-247AD
TO-268
6
4
g
g
z
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
z
z
z
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z
Low package inductance
- easy to drive and to protect
VDSS
VGS = 0 V, I = -250 µA
-500
V
BVDSS TempDerature Coefficient
0.054
%/K
Advantages
z
Easy to mount
VGS(th)
VDS = V , ID = -250 µA
-3.0
-5.0
V
VGS(th) TeGmS peratureCoefficient
-0.122
%/K
z
Space savings
z
High power density
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100
nA
VDS = 0.8 • VDSS
VGS = 0 V
T = 25°C
TJJ = 125°C
-200
µA
-1 mA
RDS(on)
VGS = -10 V, ID = 0.5 • ID25
10P50
11P50
0.90
0.75
Ω
Ω
RDS(on) TemperatureCoefficient
0.6 %/K
94535F (7/02)
© 2002 IXYS All rights reserved
IXTH/IXTT 10P50
IXTH/IXTT 11P50
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
VDS = -10 V; ID = ID25, pulse test
5
9
S
1
2
3
Ciss
Coss
Crss
4700
430
135
pF
pF
pF
VGS = 0 V, VDS = -25 V, f = 1 MHz
td(on)
tr
td(off)
tf
33
27
35
35
ns
ns
ns
ns
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 4.7 Ω (External)
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A12
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Qg(on)
Qgs
Qgd
160
46
92
nC
nC
nC
A
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
b
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
RthJC
RthCS
0.42 K/W
K/W
20.80 21.46
(TO-247)
0.25
15.75 16.26
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780 .800
L1
4.50
.177
∅P 3.55
3.65
.140 .144
Q
5.89
4.32
6.40 0.232 0.252
R
5.49
.170 .216
S
6.15 BSC
242 BSC
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-268 Outline
Symbol
IS
TestConditions
VGS = 0
10P50
11P50
-10
-11
A
A
ISM
VSD
trr
Repetitive; pulse width limited by TJM 10P50
11P50
-40
-44
A
A
IF = IS, VGS = 0 V,
-3
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = IS, di/dt = 100 A/µs
500
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
4,850,072
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