STS8550D [KODENSHI]

Small Signal Bipolar Transistor, 0.8A I(C), PNP,;


型号：	STS8550D
厂家：	KODENSHI KOREA CORP.
描述：	Small Signal Bipolar Transistor, 0.8A I(C), PNP,
文件：	总3页 (文件大小：98K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STS8550

Semiconductor

PNP Silicon Transistor

Descriptions

• High current application

• Radio in class B push-pull operation

Feature

• Complementary pair with STS8050

Ordering Information

Type NO.

Marking

Package Code

TO-92

STS8550

Outline Dimensions

unit : ^mm

3.45±0.1

2.25±0.1

4.5±0.1

0.4±0.02

2.06±0.1

1.27 Typ.

2.54 Typ.

1 2 3

PIN Connections

1. Emitter

2. Base

3. Collector

KST-9013-000

STS8550

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

-30

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

-25

-6

-800

800

°C

Emitter current

I_E

Collector dissipation

Junction temperature

Storage temperature

P_C

625

T_j

150

T_stg

-55~150

°C

Electrical Characteristics

Characteristic

(Ta=25°C)

Symbol

BV_CBO

BV_CEO

I_CBO

Test Condition

Min. Typ. Max. Unit

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Collector cut-off current

I_C=-500µA, I_E=0

-30

-25

I_C=-1mA, I_B=0

V_CB=-15V, I_E=0

-50

300

-0.5

-1.2

DC current gain

h_FE

V_CE=-1V, I_C=-50mA

I_C=-500mA, I_B=-50mA

V_CE=-1V, I_C=-500mA

V_CE=-5V, I_C=-10mA

V_CB=-10V, I_E=0, f=1MHz

Collector-Emitter saturation voltage

Base-Emitter voltage

V_CE(sat)

V_BE

Transition frequency

f_T

120

MHz

Collector output capacitance

C_ob

* : h_FERank

/ B : 85~160, C : 120~200, D : 160~300

KST-9013-000

STS8550

Electrical Characteristic Curves

Fig. 2 I_C- V_BE

Fig. 1 Pc - Ta

Fig. 3 I_C- V_CE

Fig. 4 V_CE(SAT)- I_C

Fig. 6 h_FE- I_C

Fig. 5 h_FE- I_C

KST-9013-000

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