KTK5132E [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH); N沟道MOS场效应晶体管（超高速开关，模拟开关）
| 型号： | KTK5132E |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH) |
| 文件： | 总3页 (文件大小：430K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTK5132E
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
E
B
FEATURES
MILLIMETERS
DIM
A
·2.5 Gate Drive.
_
+
1.60 0.10
D
·Low Threshold Voltage : Vth=0.5∼1.5V.
·High Speed.
_
+
2
1
B
0.85 0.10
_
+
0.70 0.10
C
D
E
3
0.27+0.10/-0.05
_
·Small Package.
+
1.60 0.10
_
+
1.00 0.10
G
H
·Enhancement-Mode.
0.50
_
0.13+0.05
J
J
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Drain-Source Voltage
SYMBOL
VDS
VGSS
ID
RATING
30
UNIT
V
1. SOURCE
2. GATE
Gate-Source Voltage
DC Drain Current
V
±20
100
3. DRAIN
mA
mW
℃
PD
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
100
Tch
150
ESM
Tstg
-55∼150
℃
EQUIVALENT CIRCUIT
D
Marking
Type Name
G
K B
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Gate Leakage Current
SYMBOL
IGSS
TEST CONDITION
MIN.
TYP. MAX. UNIT
VGS=±16V, VDS=0V
ID=100μA, VGS=0V
-
30
-
-
-
±1
μA
V
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Drain Cut-off Current
-
1
1.5
-
VDS=30V, VGS=0V
-
μA
V
Vth
VDS=3V, ID=0.1mA
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
0.5
25
-
-
|Yfs|
VDS=3V, ID=10mA
-
mS
RDS(ON)
Ciss
ID=10mA, VGS=2.5V
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
4
7
-
Ω
pF
pF
pF
nS
nS
-
8.5
3.3
9.3
50
180
Crss
Reverse Transfer Capacitance
Output Capacitance
-
-
Coss
-
-
ton
Turn-on Time
Turn-off Time
-
-
Switching Time
VDD=5V, ID=10mA, VGS=0∼5V
toff
-
-
2002. 6. 17
Revision No : 0
1/3
KTK5132E
I D - VDS
I D - VDS
(LOW VOLTAGE REGION)
100
80
60
40
20
0
1.0
COMMON
SOURCE
Ta=25 C
2.5V
2.5V
COMMON SOURCE
Ta=25 C
1.2V
1.15V
2.2V
0.8
0.6
2.0V
1.1V
1.8V
0.4
0.2
1.05V
1.0V
1.6V
1.4V
V =0.9V
GS
V
=1.2V
GS
0
0
2
4
6
8
10
12
0
0.1
0.2
0.3
0.4
0.5
0.6
DRAIN-SOURCE VOLTAGE V
(V)
DRAIN-SOURCE VOLTAGE V
(V)
DS
DS
I D - VGS
I DR - VDS
100
30
100
30
COMMON SOURCE
V
=3V
COMMON SOURCE
=0
DS
V
GS
10
3
10
Ta=25 C
3
D
S
1
0.3
1
Ta=25 C
Ta=-25 C
0.3
0.1
0.03
0.01
I
G
DR
0.1
0.03
0.01
0
-0.4
-0.8
-1.2
-1.6
0
1
2
3
4
5
GATE-SOURCE VOTAGE V
(V)
DRAIN-SOURCE VOTAGE V
(V)
GS
DS
Yfs - ID
C - VDS
300
100
100
COMMON SOURCE
=0
COMMON SOURCE
=3V
V
V
GS
50
30
DS
Ta=25 C
f=1MHz
Ta=25 C
Coss
C
iss
50
30
10
5
3
C
rss
10
5
1
1
3
5
10
30 50
100
0.1
0.3 0.5
1
3
5
10
20
DRAIN CURRENT I (mA)
D
DRAIN-SOURCE VOLTAGE V
(V)
DS
2002. 6. 17
Revision No : 0
2/3
KTK5132E
VDS(ON) - ID
t - ID
1K
2
1
COMMON SOURCE
=2.5V
V
GS
Ta=25 C
500
300
0.5
0.3
t
t
on
r
t
off
f
100
0.1
t
0.05
0.03
50
30
V
=5V
DD
I
D
V
OUT
<
D.U. 1%
V
=
5V
0
10µs
V
IN
:t , t < 5ns
r
f
IN
(Z
=50Ω)
OUT
COMMON SOURCE
Ta=25 C
0.01
V
DD
10
0.005
1
3
5
10
30 50
100
1
3
5
10
30 50
100
DRAIN CURRENT I (mA)
D
DRAIN CURRENT I (mA)
D
PD - Ta
150
100
50
0
0
20
40
60
80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
SWITCHING TIME TEST CIRCUIT
5V
0
I
D
V
OUT
V
=5V
90%
DD
V
IN
5V
0
<
D.U. 1%
=
V
IN
10%
V
:t , t < 5ns
r
IN
f
V
DD
10µs
(Z
=50Ω)
10%
OUT
V
V
IN
OUT
COMMON SOURCE
Ta=25 C
90%
V
(ON)
DS
t
V
t
f
DD
r
t
t
on
off
2002. 6. 17
Revision No : 0
3/3
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