2SB1187_15 [JMNIC]
Silicon PNP Power Transistors;
| 型号： | 2SB1187_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1187
DESCRIPTION
·
·With TO-220Fa package
·Low saturation voltage
·Complement to type 2SD1761
·Excellent DC current gain characteristics
·Wide safe operating area
APPLICATIONS
·For low frequency power
amplifier applications
PINNING
PIN
1
DESCRIPTION
Emitter
2
Collector
Base
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
VALUE
-80
UNIT
V
V
V
A
A
Open base
-60
Open collector
-5
Collector current (DC)
Collector current-Peak
-3
ICM
-6
TC=25℃
Ta=25℃
30
PC
Collector power dissipation
W
2
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tj
Tstg
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1187
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
-60
-80
-5
TYP.
MAX
UNIT
V
IC=-1mA , IB=0
IC=-50μA , IE=0
IE=-50μA , IC=0
IC=-2A ;IB=-0.2A
IC=-2A ;IB=-0.2A
VCB=-60V ;IE=0
V
V
-1.0
-1.5
-10
V
V
μA
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-10
hFE
DC current gain
IC=-0.5A ; VCE=-5V
IC=-0.5A ; VCE=-5V
IE=0 ; VCB=-10V ,f=1MHz
60
320
fT
Transition frequency
12
MHz
pF
Cob
Output capacitance
100
2
JMnic
Product Specification
Silicon Power Transistors
2SB1187
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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