2SB1188 [TRSYS]
Plastic-Encapsulated Transistors; 塑料封装晶体管
| 型号： | 2SB1188 |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | Plastic-Encapsulated Transistors |
| 文件： | 总1页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1188 TRANSISTOR (PNP)
SOT-89
FEATURES
Power dissipation
PCM
Collector current
ICM:
1. BASE
:
0.5
-2
W (Tamb=25℃)
1
2. COLLECTO
3. EMITTER
2
A
3
Collector-base voltage
V(BR)CBO -40
:
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
MIN
-40
-32
-5
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic=-50µA , IE=0
IC= -1mA , IB=0
IE=-50µA, IC=0
V
V
VCB=-20 V , IE=0
VEB=-4 V , IC=0
-1
-1
µA
µA
Emitter cut-off current
IEBO
hFE
VCe(sat)
fT
DC current gain *
V
CE=-3V, IC= -0.5A
82
80
390
-0.8
Collector-emitter saturation voltage *
Transition frequency
IC=-2A, IB= -0.2A
V
VCE=-5V,
MHz
pF
IC=-0.5A ,f=30MHz
Output capacitance
VCB=-10V, IE=0 ,f=1MHz
65
Cob
* Measured using pulse current.
CLASSIFICATION OF hFE
Rank
p
Q
R
Range
82-180
120-270
180-390
Marking
BCP
BCQ
BCR
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