2SB1188 [WILLAS]
SOT-89 Plastic-Encapsulate Transistors; SOT- 89塑封装晶体管
| 型号： | 2SB1188 |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | SOT-89 Plastic-Encapsulate Transistors |
| 文件： | 总3页 (文件大小：531K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SB1188
SOT-89 Plastic-Encapsulate Transistors
TRANSISTOR (PNP)
FEATURES
z
Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A)
Complements the 2SD1766
SOT-89
z
z
Weight: 0.05 g
RoHS product for packing code suffix "G"
1. BASE
z
Halogen free product for packing code suffix "H"
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
1
2. COLLECTO
3. EMITTER
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-40
-32
-5
Units
2
V
V
V
A
Collector-Base Voltage
Collector-Emitter Voltage
3
Emitter-Base Voltage
Collector Current -Continuous
-2
Collector Power Dissipation
Junction Temperature
0.5 (2.0*)
150
PC
TJ
W
℃
℃
Storage Temperature
Tstg
-55-150
* When mounted on a 40*40*1mm ceramic board.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN TYP MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
-40
-32
-5
IC=-50μA , IE=0
IC= -1mA , IB=0
IE=-50μA, IC=0
V
V
VCB=-20 V , IE=0
VEB=-4 V , IC=0
VCE=-3V, IC= -0.5A
IC=-2A, IB= -0.2A
-1
μA
μA
Emitter cut-off current
IEBO
-1
hFE
DC current gain *
82
390
-0.8
Collector-emitter saturation voltage *
Transition frequency
VCE(sat)
V
V
CE=-5V, IC=-0.5A ,f=30MHz
100
50
MHz
pF
fT
Output capacitance
VCB=-10V, IE=0 ,f=1MHz
Cob
* Measured using pulse current.
CLASSIFICATION OF hFE
Rank
P
Q
R
Range
Marking
P/N
82-180
BCP
120-270
BCQ
180-390
BCR
2SB1188P
2SB1188Q
2SB1188
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
2SB1188
SOT-89 Plastic-Encapsulate Transistors
hFE ——
IC
Static Characteristic
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
-0.0
1000
100
10
COMMON EMITTER
Ta=25℃
-2.0mA
Ta=100℃
Ta=25℃
-1.8mA
-1.6mA
-1.4mA
-1.2mA
-1.0mA
-0.8mA
-0.6mA
-0.4mA
COMMON EMITTER
VCE= -3V
IB=-0.2mA
-5
-5
-0
-1
-0
0
-1
-2
-3
-4
-6
-10
-100
-1000
-2000
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
VCEsat ——
VBEsat ——
IC
IC
-1000
-100
-10
-2000
-1000
Ta=25℃
Ta=100 ℃
Ta=100 ℃
Ta=25℃
β=10
β=10
-1
-100
-0.1
-10
-100
-1000
-2000
-1200
150
-1
-10
-100
-1000 -2000
COLLECTOR CURREMT IC (mA)
COLLECTOR CURREMT IC (mA)
Cob/Cib ——
VCB/VEB
IC ——
VBE
-2000
-1000
300
f=1MHz
IE=0/IC=0
Cib
Ta=25 ℃
100
10
1
-100
-10
-1
Cob
COMMON EMITTER
VCE= -3V
-0.1
-0.1
-1
-10
-20
-200
-400
-600
-800
-1000
BASE-EMMITER VOLTAGE VBE (mV)
REVERSE VOLTAGE
V
(V)
PC —— Ta
600
500
400
300
200
100
0
25
50
75
100
125
AMBIENT TEMPERATURE Ta (℃)
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
2SB1188
SOT-89 Plastic-Encapsulate Transistors
Outline Drawing
SOT-89
.181(4.60)
.173(4.39)
.063(1.60)
.055(1.40)
.061REF
(1.55)REF
.102(2.60)
.091(2.30)
.167(4.25)
.154(3.91)
.023(0.58)
.016(0.40)
.047(1.2)
.031(0.8)
.060TYP
.197(0.52)
(1.50)TYP
.017(0.44)
.014(0.35)
.013(0.32)
.118TYP
(3.0)TYP
Dimensions in inches and (millimeters)
Rev.C
2012-10
WILLAS ELECTRONIC CORP.
相关型号：
2SB1188-E-AB3-R
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN
UTC
2SB1188-P-TP
Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
MCC
2SB1188-Q-AB3-R
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN
UTC
©2020 ICPDF网 联系我们和版权申明