2SB1188 [HTSEMI]
TRANSISTOR(PNP); 晶体管（ PNP ）
| 型号： | 2SB1188 |
| 厂家： | 
SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. |
| 描述： | TRANSISTOR(PNP) |
| 文件： | 总2页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SB1188
TRANSISTOR(PNP)
SOT-89
1. BASE
FEATURES
1
2. COLLECTO
3. EMITTER
z
z
Low VCE(sat).
2
Complements the 2SD1766
3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
-40
V
V
V
A
Collector-Base Voltage
Collector-Emitter Voltage
-32
-5
Emitter-Base Voltage
Collector Current -Continuous
-2
Collector Power Dissipation
Junction Temperature
Storage Temperature
PC
500
150
-55-150
mW
℃
TJ
Tstg
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN TYP MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
-40
-32
-5
IC=-50μA , IE=0
IC= -1mA , IB=0
IE=-50μA, IC=0
V
V
VCB=-20 V , IE=0
VEB=-4 V , IC=0
VCE=-3V, IC= -0.5A
IC=-2A, IB= -0.2A
-1
μA
μA
Emitter cut-off current
IEBO
-1
hFE
DC current gain *
82
390
-0.8
Collector-emitter saturation voltage *
Transition frequency
VCE(sat)
V
V
CE=-5V, IC=-0.5A ,f=30MHz
100
50
MHz
pF
fT
Output capacitance
VCB=-10V, IE=0 ,f=1MHz
Cob
* Measured using pulse current.
CLASSIFICATION OF hFE
Rank
P
Q
R
Range
82-180
120-270
BCQ
180-390
Marking
BCP
BCR
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
2SB1188
Typical Characteristics
2
JinYu
www.htsemi.com
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