2SB1188 [KEXIN]
Medium Power Transistor; 中功率晶体管型号: | 2SB1188 |
厂家: | GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
描述: | Medium Power Transistor |
文件: | 总1页 (文件大小:51K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMD Type
Transistors
Medium Power Transistor
2SB1188
Features
Low VCE(sat).
VCE(sat) = -0.5V (Typ.)
(IC/IB = -2A / -0.2A)
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base Voltage
Collector-emitter Voltage
Emitter-base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
-40
-32
V
-5
V
-2
-3
A
Collector current
ICP *
PC
A
Collector power dissipation
Jumction temperature
Storage temperature
0.5
W
Tj
150
Tstg
-55 to +150
* PW=100ms
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
-40
-32
-5
Typ
Max
Unit
V
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO IC = -1mA
BVEBO
ICBO
IC = -50
A
V
V
IE = -50
A
VCB = -20V
VEB = -4V
-1
-1
ìA
ìA
V
Emitter cutoff current
IEBO
Collector-Emitter Saturation Voltage
DC current transfer ratio
VCE(sat) IC = -2A , IB = -0.2A
hFE VCE = -3V , IC = -0.5A
fT
-0.5
-0.8
390
82
Transition frequency
VCE = -5V , IE = 0.5A , f = 30MHz
VCB = -10V , IE = 0, f = 1MHz
100
50
MHz
pF
Output Capacitance
Cob
hFE Classification
BC
Marking
Rank
P
Q
R
hFE
82 180
120 270
180 390
1
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